Abstract: Using output of an inertial sensor, whether an operation device is in a swing state of being swung is determined. Whether the operation device is rotated in a first direction about a predetermined axis of the inertial sensor or a second direction opposite to the first direction, is determined. Whether the operation device is swung in an upward direction or a downward direction is determined. First processing is executed in at least either a case where the operation device is rotated in the first direction about the predetermined axis or a case where the operation device is swung in the upward direction, during the swing state. Second processing is executed in at least either a case where the operation device is rotated in the second direction about the predetermined axis or a case where the operation device is swung in the downward direction, during the swing state.

Abstract: A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.

Abstract: A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.

Abstract: A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.

Abstract: There is provided a gene encoding a protein derived from, for example, snapdragons and petunias, said protein having an amino acid sequence as set forth in SEQ ID NO: 2, 8, and 10, and having an activity of transferring a glycosyl group to aurones, and a method of producing said protein using said gene. By introducing this gene into plants that do not have said gene, a yellow pigment aurone can be stabilized and plants having yellow flowers can be obtained.

Abstract: A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.

Abstract: A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.

Abstract: A first insulating hydrogen barrier film is filled between lower electrodes of some ferroelectric capacitors arranged along one direction out of a word line direction and a bit line direction among a plurality of ferroelectric capacitors included in a ferroelectric memory of this invention. A common capacitor dielectric film commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the lower electrodes of the some ferroelectric capacitors arranged along the one direction and on the first insulating hydrogen barrier film. A common upper electrode commonly used by the some ferroelectric capacitors arranged along the one direction is formed on the common capacitor dielectric film. A second insulating hydrogen barrier film is formed so as to cover the common upper electrode.

Abstract: An apparatus and method for measuring a temperature of a high temperature liquid contained in a furnace. An optical fiber covered with a metallic tube is inserted through a passageway inside a nozzle arranged on a furnace wall of the furnace. The nozzle communicates with an interior of the furnace containing the liquid, and gas is supplied into the passageway inside the nozzle to prevent the nozzle from clogging. The metal-covered optical fiber is fed through the passageway inside the nozzle into the liquid such that spectral light radiated from the liquid enters a tip of the metal-covered optical fiber and is propagated therealong. The temperature of the liquid is determined by a radiation thermometer, coupled to the metal-covered optical fiber, based on the spectral light propagated along the metal-covered optical fiber.