Abstract: An object of the present invention is to provide a laminated sheet for a metal-clad laminate and a method of manufacturing the same, the laminated sheet including: a substrate that includes a liquid crystal polymer or a fluoropolymer; and an adhesive layer, in which adhesiveness with a metal layer formed on the adhesive layer is excellent. Another object of the present invention is to provide a metal-clad laminate and a method of manufacturing the same. A laminated sheet for a metal-clad laminate includes: a substrate that includes a liquid crystal polymer or a fluoropolymer; an inorganic oxide layer; and an adhesive layer, in which the substrate, the inorganic oxide layer, and the adhesive layer are laminated in this order.

Abstract: An electromagnetic shielding member (11) includes a substrate (12) having a three-dimensional shape, and a conductive layer member (13) that is disposed on the substrate (12) and reflects an electromagnetic wave in a wavelength-selective manner.

Abstract: The present invention provides a conductive film in which a change in the surface state is suppressed and the light-fast adhesiveness of a protective layer is excellent, a touch panel sensor, and a touch panel. The conductive film according to the present invention includes a substrate, a patterned layer to be plated which is arranged on at least one surface of the substrate and has a functional group interacting with a plating catalyst or a precursor thereof, a copper plating layer which is arranged to cover the patterned layer to be plated and is in contact with the substrate, a metal layer which is arranged to cover the copper plating layer and contains a metal that is electrochemically nobler than copper, a nitrogen-containing compound layer which is arranged to cover the metal layer that is electrochemically nobler than copper, and a protective layer which is arranged to cover the nitrogen-containing compound layer.

Abstract: The present invention provides a conductive film in which a change in the surface state is suppressed, a touch panel sensor, and a touch panel. The conductive film according to the present invention includes a substrate, a patterned layer to be plated which is arranged on at least one surface of the substrate and has a functional group interacting with a plating catalyst or a precursor thereof, a copper plating layer which is arranged so as to cover the patterned layer to be plated and is in contact with the substrate, and a protective layer which is arranged so as to cover the copper plating layer, in which the protective layer contains an alloy of copper and a metal that is electrochemically nobler than copper.

Abstract: The present invention provides a conductive film in which a change in the surface state is suppressed and the light-fast adhesiveness of a protective layer is excellent, a touch panel sensor, and a touch panel. The conductive film according to the present invention includes a substrate, a patterned layer to be plated which is arranged on at least one surface of the substrate and has a functional group interacting with a plating catalyst or a precursor thereof, a copper plating layer which is arranged to cover the patterned layer to be plated and is in contact with the substrate, a metal layer which is arranged to cover the copper plating layer and contains a metal that is electrochemically nobler than copper, a nitrogen-containing compound layer which is arranged to cover the metal layer that is electrochemically nobler than copper, and a protective layer which is arranged to cover the nitrogen-containing compound layer.

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

Abstract: A method of manufacturing a conductive film includes forming a first metallic film containing nickel as a main component on at least one main surface of the transparent resin substrate so as to be in contact with the transparent resin substrate, forming a second metallic film containing copper as a main component on the first metallic film, forming, on the second metallic film, a resist film provided with openings in a region where the metallic thin wires are formed, removing the second metallic film in the openings, forming a third metallic film on the first metallic film in the openings by a plating method, removing the resist film, removing the second metallic film on the first metallic film, and removing the first metallic film using the third metallic film as a mask.

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

Abstract: The present invention provides a method for producing a metal wiring-containing laminate which is capable of efficiently producing a metal wiring-containing laminate having a fine metal wiring with low resistance; as well as a metal wiring-containing laminate and a substrate with a plated layer. The method for producing a metal wiring-containing laminate of the present invention includes: a step of forming a photosensitive layer having a functional group capable of interacting with a plating catalyst or a precursor thereof on a substrate; a step of exposing the photosensitive layer in a patternwise manner and subjecting the exposed photosensitive layer to a development treatment to form a plated layer having a groove portion; a step of applying a plating catalyst or a precursor thereof to the plated layer; and a step of subjecting the plated layer, to which the plating catalyst or the precursor thereof has been applied, to a plating treatment to form a metal wiring so as to fill the groove portion.

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

Abstract: An object of the present invention is to provide a film having a plated-layer precursor layer which is capable of forming a metal layer having excellent roll-to-roll productivity and excellent adhesiveness to a substrate. Another object of the present invention is to provide a film having a patterned plated layer as well as an electroconductive film and a touch panel using the same. The film having a plated-layer precursor layer of the present invention is a film having a plated-layer precursor layer including a substrate, and an undercoat and a plated-layer precursor layer disposed on the substrate in this order from the substrate side, in which the undercoat has a hardness on the surface thereof of 10 N/mm2 or less and a friction coefficient with release paper of 5 or less.

Abstract: An object of the invention is to provide: a photoelectric conversion material which has excellent deposition stability such that when the photoelectric conversion material is used in a photoelectric conversion element, the change in the performance of the element due to variations in the concentration of the photoelectric conversion material is small; a photoelectric conversion element using the photoelectric conversion material; and an optical sensor and an imaging element including the photoelectric conversion element. The photoelectric conversion material of the invention is a compound (A) expressed by the following Formula (1).

Abstract: Provided are a composition for forming a plating layer, which is capable of forming a metal layer having excellent conductivity by means of a plating treatment and is capable of forming a plating layer having excellent adhesiveness to the metal layer, as well as a film having a plating layer precursor layer, a film having a plating layer, a conductive film, and a touch panel, each of which uses the composition for forming a plating layer. The composition for forming a plating layer according to the present invention includes a non-polymerizable polymer having a group capable of interacting with a metal ion, a polyfunctional monomer having two or more polymerizable functional groups, a monofunctional monomer, and a polymerization initiator.

Abstract: A transistor and a manufacturing method of a transistor which prevents a decrease in mobility, prevents a decrease in a withstand voltage of the insulating layer, and prevents a short circuit between a gate electrode and a semiconductor layer due to curvature. A substrate having insulating properties, a source electrode and a drain electrode disposed in a surface direction of a main surface of the substrate by being separated from each other, a gate electrode disposed between the source electrode and the drain electrode in the surface direction of the substrate, a semiconductor layer disposed in contact with the source electrode and the drain electrode, and an insulating film disposed between the gate electrode and the semiconductor layer in a direction perpendicular to the main surface of the substrate are included, and a gap region is formed between the semiconductor layer and the insulating film.

Abstract: The present invention provides a gas sensor which exhibits high detection sensitivity and includes an organic transistor and an organic transistor. A gas sensor of the present invention includes a bottom-gate type organic transistor including a source electrode, a drain electrode, a gate electrode, a gate insulating layer, an organic semiconductor layer, and a receptor layer which is disposed between the gate insulating layer and the organic semiconductor layer and includes a compound that interacts with gas molecules which are a detection subject.

Abstract: An object of the invention is to provide: a photoelectric conversion material which has excellent deposition stability such that when the photoelectric conversion material is used in a photoelectric conversion element, the change in the performance of the element due to variations in the concentration of the photoelectric conversion material is small; a photoelectric conversion element using the photoelectric conversion material; and an optical sensor and an imaging element including the photoelectric conversion element. The photoelectric conversion material of the invention is a compound (A) expressed by the following Formula (1).

Abstract: A wafer for forming an imaging element has a test pattern and a plurality of imaging element units. The wafer has an imaging region which includes a great number of photoelectric conversion pixels, an imaging element units and a test pattern. The test pattern includes a testing organic photoelectric conversion film and a testing counter electrode having the same configuration and formed at the same time as the organic photoelectric conversion film and a counter electrode, respectively of the photoelectric conversion pixels. A first testing terminal is electrically connected to the undersurface side of the testing organic photoelectric conversion film, and a second testing terminal is electrically connected to the testing counter electrode. A protective film is formed over the entire semiconductor wafer so as to cover the imaging region and the test pattern, and is then partially removed so that a part of each testing terminal is exposed.

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

Abstract: A photoelectric conversion element exhibiting excellent responsiveness and high photoelectric conversion efficiency, a method of using the photoelectric conversion element, and an optical sensor and an image sensor including the photoelectric conversion element are provided. The photoelectric conversion element includes a conductive film, a photoelectric conversion film containing a photoelectric conversion material and a transparent conductive film. The conductive film, the photoelectric conversion film and the transparent conductive film are formed in this order.

Abstract: A wafer for forming an imaging element has a test pattern and a plurality of imaging element units. The wafer has an imaging region which includes a great number of photoelectric conversion pixels, an imaging element units and a test pattern. The test pattern includes a testing organic photoelectric conversion film and a testing counter electrode having the same configuration and formed at the same time as the organic photoelectric conversion film and a counter electrode, respectively of the photoelectric conversion pixels. A first testing terminal is electrically connected to the undersurface side of the testing organic photoelectric conversion film, and a second testing terminal is electrically connected to the testing counter electrode. A protective film is formed over the entire semiconductor wafer so as to cover the imaging region and the test pattern, and is then partially removed so that a part of each testing terminal is exposed.