Abstract: A novel circuit layout method is provided. In a circuit including a first terminal, a second terminal, a third terminal, a fourth terminal, a first wiring, and a second wiring, the layout method includes a step of generating a layout of connecting the first terminal and the third terminal using the first wiring; a step of generating a layout of connecting the second terminal and the fourth terminal using the second wiring; a step of calculating a first wiring resistance of the first wiring; a step of calculating a second wiring resistance of the second wiring; and a step of automatically generating the layouts of the first wiring and the second wiring in the circuit so that the first wiring resistance can be equal to the second wiring resistance.

Abstract: Environmental information is managed by a neural network. An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.

Abstract: Variations in a receiving circuit employing differential signaling are reduced. The receiving circuit converts a first signal and a second signal which are supplied through differential signaling into a third signal which is a single-ended signal and outputs the third signal. The receiving circuit includes an operational amplifier, a first element, a first transistor, and a first circuit. The first element is connected to the first circuit through a first node to which the first transistor is connected. The first signal and the second signal that is the inverse of the first signal are supplied to the operational amplifier. The operational amplifier supplies an output signal to the first element, and a first preset potential is supplied to the first node through the first transistor. A signal including variations of the operational amplifier is stored in the first element in accordance with the first preset potential.

Abstract: A display device with improved display quality and reduced power consumption is provided. The display device includes a gate driver, a display portion, and a selection signal output circuit. The display portion includes pixel circuits and scan lines. Each of the pixel circuits includes a display element. The gate driver is electrically connected to the scan lines. The first scan lines are electrically connected to the pixel circuits. The scan lines are each configured to receive a first scan signal. The selection signal output circuit is configured to output a first selection signal. The first selection signal is configured to supply the first scan signal to a selected scan line. The display element is configured to update display by the first scan signal. In the pixel circuits, one display element displays an image updated with a different update frequency from another display element.

Abstract: An object is to shorten the time for rewriting data in memory cells. A memory module includes a first memory cell, a second memory cell, a selection transistor, and a wiring WBL1. The first memory cell includes a first memory node. The second memory cell includes a second memory node. One end of the first memory cell is electrically connected to the wiring WBL1 through the selection transistor. The other end of the first memory cell is electrically connected to one end of the second memory cell. The other end of the second memory cell is electrically connected to the wiring WBL1. When the selection transistor is on, data in the first memory node is rewritten by a signal supplied through the selection transistor to the wiring WBL1. When the selection transistor is off, data in the first memory node is rewritten by a signal supplied through the second memory node to the wiring WBL1.

Abstract: Person's conditions are classified according to his/her eye data. Person's conditions are classified according to his/her eye data using an imaging device, a feature extraction unit, and a classifier. The imaging device has a function of generating a group of images by continuous image capturing, and the group of images preferably includes an image of an eye area. The eye includes a black area and a white area. The method includes the steps in which the feature extraction unit extracts the eye area from the group of images, extracts a blinking amplitude, detects an image for determining start of eye blinking, stores an image for determining end of eye blinking as first data, and stores an image after a predetermined time elapsed from the first data as second data. The step in which the feature extraction unit extracts the white area from the first data and the second data is included. The classifier can use the white area as learning data.

Abstract: An imaging device with a novel structure is provided. The imaging device includes an imaging region provided with a plurality of pixels. The plurality of pixels included in the imaging region include a first pixel and a second pixel. The imaging device has a function of selecting a first region or a second region. The first region includes the same number of pixels as the second region. The first region includes at least the first and second pixels. The second region includes at least the second pixel. The pixels included in the first region or the second region have a function of outputting imaging signals obtained by the pixels. The imaging device generates first image data by concurrently reading the imaging signals output from the pixels included in the first region and performing arithmetic operation on the signals.

Abstract: The electrical characteristics of a semiconductor element are predicted from a process list. A feature-value calculation portion and a feature prediction portion are used to predict the electrical characteristics of the semiconductor element. The feature-value calculation portion includes a first learning model and a second learning model, and the feature prediction portion includes a third learning model. The first learning model includes a step of learning the process list for generating the semiconductor element and a step of generating a first feature value. The second learning model includes a step of learning the electrical characteristics of the semiconductor element generated in accordance with the process list and a step of generating a second feature value.

Abstract: Text is generated from an object. Text is generated from a first object. The first object includes a second object and a third object. A step of detecting coordinate data of the second object is included. A step of detecting coordinate data of the third object is included. A step of extracting positional relation between the second object and the third object from coordinate data is included. A step of converting the extracted positional relation into graph data is included. A step of generating text about the positional relation between the second object and the third object from graph data is included.

Abstract: A semiconductor device in which temperature dependence is reduced is provided. A switched capacitor is formed using a second transistor, a third transistor, and a second capacitor. Semiconductor layers of the second transistor and the third transistor that include an oxide can reduce temperature dependence. An AC signal supplied to the gates of the second transistor and the third transistor is converted into a DC voltage through the switched capacitor. Note that the level of the DC voltage is adjusted by the levels of the voltages supplied to the back gates of the second transistor and the third transistor.

Abstract: A display device having a narrow bezel region is provided. The display device includes a first layer and a second layer. The first layer includes a source driver and one part of a sensor, and the second layer includes a gate driver, a plurality of pixels, and the other part of the sensor. The plurality of pixels include a pixel in which a light-emitting element emits light and a pixel having a function of the gate driver. An opening portion where the one part of the sensor is formed and a first terminal connected to the source driver are provided on the top surface of the first layer, and a second terminal is provided on the opposite side of the surface where the pixels included in the second layer are arranged. The first terminal is bonded to the second terminal, so that they are electrically connected to each other and the sensor is formed.

Abstract: Environmental information is managed by a neural network. An image detection module includes a first neural network, a first communication module, a first position sensor, a first processor, and a passive element. The first neural network includes an imaging device. The imaging device has a function of obtaining an image, and the first position sensor has a function of detecting positional information on where the image is obtained. When the first neural network determines whether the image has learned features, the first processor can transmit the positional information on where the image is obtained. The first processor receives a detection result through the first communication module, and the first processor can operate the passive element in accordance with the detection result.

Abstract: A small-size semiconductor device is provided. The semiconductor device includes a first layer, a second layer, and a third layer formed over a substrate. A first transistor included in the first layer includes a first semiconductor layer containing Si. A second transistor included in the second layer includes a second semiconductor layer containing Ga. A third transistor included in the third layer includes a third semiconductor layer containing at least one of In and Zn. The first semiconductor layer of the first transistor is formed using the substrate. The second semiconductor layer of the second transistor is formed using a crystal obtained by crystal growth over the substrate. The third semiconductor layer of the third transistor is formed above the first semiconductor layer and the second semiconductor layer.

Abstract: A search system and a search method are provided. The search system includes a means to input first circuit diagram information to a terminal, a database in which second circuit diagram information is registered, a means to convert the input first circuit diagram information into a first graph, an arithmetic means to calculate similarity between the first graph and a second graph based on the second circuit diagram information, and a means to display the similarity on the terminal.

Abstract: A solid-state relay having favorable electrical characteristics is provided. The solid-state relay includes a first circuit and a second circuit. The first circuit includes a first light-emitting element. The second circuit includes a first light-receiving element, a memory, and a first switch. The memory includes a second switch. The second switch includes a second semiconductor layer. The first switch and the first light-emitting element are formed using a first semiconductor layer. The first semiconductor layer and the second semiconductor layer contain gallium, and the second semiconductor layer further contains oxygen. On or off of the first light-emitting element is controlled by a first signal supplied to the first circuit. First data, which is generated when the first light-receiving element converts light emitted by the first light-emitting element into voltage, is supplied to the memory. Conduction or non-conduction of the first switch is controlled by the first data stored in the memory.

Abstract: An adder circuit inhibiting overflow is provided. A first memory, a second memory, a third memory, and a fourth memory are included. A step of supplying first data with a sign to the first memory and supplying the first data with a positive sign stored in the first memory, to the second memory; a step of supplying the first data with a negative sign stored in the second memory, to the third memory; a step of generating second data by adding the first data with a positive sign stored in the second memory and the first data with a negative sign stored in the third memory; and a step of storing the second data in the fourth memory are included. When the second data stored in the fourth memory are all second data with a positive sign or all second data with a negative sign, all the second data stored in the fourth memory are added.

Abstract: Image retrieval is facilitated. An image retrieval device is a device for retrieving an image with high similarity that is stored in a server computer by using a query image. In an image registration mode, a plurality of first images are supplied to a code generation portion, and the code generation portion resizes the number of pixels of the first image, converts the number of pixels of the first image into the number of pixels of a second image, and extracts a first feature value from the second image. The control portion links the first image to the first feature value corresponding to the first image and stores the first image and the first feature value in a storage portion.

Abstract: A parameter candidate for a semiconductor element is provided. A data set of measurement data is provided to a parameter extraction portion, and a model parameter is extracted. A first netlist is provided to a circuit simulator, simulation is performed using the first netlist and the model parameter, and a first output result is output. A classification model learns the model parameter and the first output result and classifies the model parameter. A second netlist and a model parameter are provided to the circuit simulator. A variable to be adjusted is supplied to a neural network, an action value function is output, and the variable is updated. The circuit simulator performs simulation using the second netlist and the model parameter. When a second output result to be output does not satisfy conditions, a weight coefficient of the neural network is updated. When the second output result satisfies the conditions, the variable is judged to be the best candidate.

Abstract: A semiconductor device that inhibits deterioration of a secondary battery is provided. The semiconductor device includes a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The first circuit includes a variable resistor. The sensor has a function of measuring a temperature of the secondary battery. The first circuit has a function of judging the charge voltage of the secondary battery and outputting a first result; a function of judging the temperature of the secondary battery measured by the sensor and outputting a second result; a function of determining the magnitude of the variable resistor on the basis of the first result and the second result; a function of discharging the charge voltage through the variable resistor; and a function of stopping discharge when the charge voltage reaches a specified voltage.

Abstract: An image retrieval system that enables high-accuracy image retrieval in a short time is provided. The image retrieval system includes a processing portion provided with a neural network. The neural network includes a layer provided with a neuron. The processing portion has a function of comparing query image data with a plurality of pieces of database image data, and extracting the database image data including an area with a high degree of correspondence to the query image data as extracted image data. The processing portion has a function of extracting data of the area with a high degree of correspondence to the query image data from the extracted image data, as partial image data. The layer has a function of outputting an output value corresponding to the features of the image data input to the neural network.