Abstract: An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1?x?2.2, 1.0?y?2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Cr, Mo, W, Mn and Re, and X includes O.

Abstract: An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.

Abstract: An information recording and reproducing apparatus, includes: a stacked structure including an electrode layer and a recording layer; a buffer layer added to the electrode layer; and a voltage application unit configured to apply a voltage to the recording layer, produce a phase change in the recording layer, and record information. The recording layer includes a first layer including a first compound having an ilmenite structure represented by AxMyX3 (0.1?x?1.1 and 0.

Abstract: A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.

Abstract: A nonvolatile latch circuit includes: a first gate part controlling to load or intercept an input signal based on a gate signal; a first logic gate functioning as an inverter or a gate outputting a constant voltage in response to the first control signal; a second logic gate functioning as an inverter or a gate outputting the constant voltage in response to the first control signal; a second gate part controlling to load or intercept the output of the second logic gate based on an inverted signal of the gate signal and sends the output of the second logic gate to an first input terminal of the first logic gate; and first and second injection type MTJ elements provided between the driving power supply and the first and second logic gates and changing in resistance depending upon a current flow direction.

Abstract: An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AxMyX4 (0.1?x?2.2, 1.0?y?2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Ti, Zr, Hf, V, Nb and Ta, and X includes O.

Abstract: The information recording/reproducing device includes a stacked structure which is comprised of an electrode layer and a recording layer, a buffer layer which contacts with the recording layer and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer is comprised of a complex compound having two cations, and one of the cations is a transition element having “d” orbit where electrons are incompletely filled. The recording layer is comprised of CuxAyXz (0.1?x?1.1, 0.9?y?1.1, 1.8?z?2.2), and includes a first chemical compound having a delafossite structure. The buffer layer is comprised of one of M3N4, M3N5, MN2, M4O7, MO2 and M2O5.

Abstract: A motion reduction apparatus has an orthorhombic shaped floating main body (11), a plumb plate supported vertically on one side section of the floating main body by stay members (13), and flow sections (15) for flooding with incoming water are provided between the floating main body and the plumb plate in such a way that an upper end section of the plumb plate is at about the same height as the bottom surface of the floating main body.

Abstract: An information recording/reproducing device according to an aspect of the present invention includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having one of a Wolframite structure and a Scheelite structure.

Abstract: A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.

Abstract: A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.

Abstract: A magnetic recording element includes a first fixed layer having a first and second face and having a magnetization direction fixed in a direction penetrating the first and second face. A free layer has a third and fourth face, a magnetization easy and hard axis both extending along the third or fourth face, and a magnetization direction which changes according to a direction of a current flowing through the first and fourth face with a magnetic field applied in a fixed direction or according to a direction of a magnetic field applied to the free layer with a current flowing through the first and fourth face in a fixed direction. A nonmagnetic first intermediate layer is provided between the second and third face. A magnetic field generating layer applies a magnetic field smaller than the anisotropy field of the free layer to the free layer along the magnetization hard axis.

Abstract: There is proposed a nonvolatile information recording and reproducing device with low power consumption and high thermal stability. The information recording and reproducing apparatus according to an aspect of the present invention includes a recording layer and a unit for recording information by applying a voltage to the recording layer to generate a state change in the recording layer. The recording layer being configured to include at least a first compound having a hollandite structure.

Abstract: A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.

Abstract: A method of dyeing a lens, comprises the steps of: (a) applying a dyeing ink containing a sublimable dye onto a base material to produce a dyeing base body; (b) placing the dyeing base body and the lens so that a dye-applied surface of the dyeing base body and a surface of the lens to be dyed face each other in noncontact relation, and heating the dyeing base body under substantially a vacuum condition to sublimate and deposit the applied dye on the lens; and (c) heating the dye deposited surface of the lens by irradiation of infrared rays from one direction to fix the deposited dye on the lens.

Abstract: A probe memory device carries out positioning with the use of a servo pattern provided in a servo area on a recording medium, and the recording medium and a probe head section are reciprocatingly moved (scan-moved) by vibration at a specific frequency in a one-axis direction. At this time, based on information from the servo area, relative position information between the recording medium and the probe head section is acquired, the relative position information is processed at a control section, and then, feedback control is carried out for carrying out position correction relative to an actuator.

Abstract: A nonvolatile information recording and reproducing device exhibits low power consumption and high thermal stability. The information recording and reproducing apparatus according to an aspect of the present invention includes a recording layer and a unit for recording information by applying a voltage to the recording layer to generate a resistance change to be caused due to a phase change in the recording layer. The recording layer includes a material having a ramsdelite structure.

Abstract: There is proposed a nonvolatile information recording/reproducing device with low power consumption and high thermal stability. The information recording/reproducing device according to an aspect of the present invention includes a recording layer, and mechanism for recording information by generating a phase change in the recording layer while applying a voltage to the recording layer. The recording layer is comprised one of a Wolframite structure and a Scheelite structure.

Abstract: A nonvolatile latch circuit includes: a first gate part controlling to load or intercept an input signal based on a gate signal; a first logic gate functioning as an inverter or a gate outputting a constant voltage in response to the first control signal; a second logic gate functioning as an inverter or a gate outputting the constant voltage in response to the first control signal; a second gate part controlling to load or intercept the output of the second logic gate based on an inverted signal of the gate signal and sends the output of the second logic gate to an first input terminal of the first logic gate; and first and second injection type MTJ elements provided between the driving power supply and the first and second logic gates and changing in resistance depending upon a current flow direction.