Abstract: An object of one embodiment of the present invention is to accurately derive an inclination of a line image sensor. One embodiment of the present invention is an image reading apparatus including: a line image sensor in which reading elements for reading an image are arrayed in a predetermined direction; a first derivation unit configured to, based on read data acquired by reading a chart on which a plurality of dot patterns is printed with the line image sensor, derive coordinates of each of the plurality of dot patterns; a second derivation unit configured to derive an inclination angle of the line image sensor based on the coordinates derived by the first derivation unit; and a first calculation unit configured to calculate a first correction value for correcting the inclination of the line image sensor based on the inclination angle derived by the second derivation unit.

Abstract: A method for processing a substrate includes treating the substrate with a small molecular inhibitor (SMI), the substrate including a recess formed in a dielectric layer and a first metal layer in the recess, the SMI covering a surface of the first metal layer. The method further includes, after treating the substrate with the SMI, treating the substrate with a large molecular inhibitor (LMI), the LMI covering sidewalls of the dielectric layer in the recess. The method further includes heating the substrate to remove the SMI from the first metal layer and to expose the first metal layer in the recess, where the LMI remains on the sidewalls after removing the SMI from the first metal layer. The method further includes depositing a second metal over the first metal layer in the recess, where the LMI covering the sidewalls prevents deposition of the second metal on the dielectric layer.

Abstract: A film forming method is provided. In the film forming method, a gas of a carbon precursor containing an organic compound having an unsaturated carbon bond is supplied to a substrate, and a gas of a silicon precursor containing a silicon compound is supplied to the substrate. Further, a carbon-silicon containing film is formed on the substrate by thermally reacting the carbon precursor with the silicon precursor at a temperature lower than 800° C.

Abstract: There is provided an etching method which includes supplying an etching gas including an H2 gas or an NH3 gas to a target substrate having a germanium portion in an excited state; and etching the germanium portion.

Abstract: There is provided heating method for heating a substrate having a germanium film or a silicon germanium film formed on a surface of the substrate, the method including: loading the substrate kept in an air atmosphere at least a predetermined time into a processing container; and heating the substrate in a state in which an interior of the processing container is kept in a hydrogen gas-containing atmosphere.

Abstract: There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.

Abstract: A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.

Abstract: There is provided an etching method which includes supplying an etching gas including an H2 gas or an NH3 gas to a target substrate having a germanium portion in an excited state; and etching the germanium portion.

Abstract: There is provided heating method for heating a substrate having a germanium film or a silicon germanium film formed on a surface of the substrate, the method including: loading the substrate kept in an air atmosphere at least a predetermined time into a processing container; and heating the substrate in a state in which an interior of the processing container is kept in a hydrogen gas-containing atmosphere.

Abstract: The present invention aims to provide a hydrocarbon-based polymer electrolyte which is excellent in processability and proton conductivity, especially proton conductivity at low water content, and a membrane thereof. The polymer electrolyte contains, in its main chain, a repeating unit represented by the following formula (1): wherein Ar represents a benzene or naphthalene ring, or a derivative thereof in which one or more of the ring-forming carbon atoms is replaced by a hetero atom; X represents a proton or a cation; a and b are each an integer of 0 to 4, and the sum of a's and b's is 1 or greater; m represents an integer of 1 or greater; and n represents an integer of 0 or greater.

Abstract: There is provided a method for forming a nitride film on a substrate to be processed by a thermal ALD which repeats: supplying a film forming raw material gas to the substrate to be processed while heating the substrate to be processed to a predetermined temperature; and supplying a nitriding gas to the substrate to be processed, the nitride film forming method comprises supplying a chlorine-containing gas to the substrate to be processed after the supplying the film forming raw material gas.

Abstract: There is provided a boron film forming method which includes forming a boron film on a target substrate by CVD by supplying a boron-containing gas as a film-forming source gas to the target substrate while heating the target substrate to a predetermined temperature, the boron film being made of boron and inevitable impurities and used for a semiconductor device.

Abstract: There is provided a hard mask used in forming a recess having a depth of 500 nm or more by dry etching. The hard mask includes a boron-based film formed as an etching mask on a film including a SiO2 film. Further, there is provided a method of forming the hard mask as the etching mask on a substrate to be processed having the film including the SiO2 film. The etching mask is for forming a recess having a depth of 500 nm or more by dry etching. The method includes forming a boron-based film by CVD by supplying at least a boron-containing gas to a surface of the film including the SiO2 film while heating the substrate to a predetermined temperature.

Abstract: A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.

Abstract: A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.

Abstract: There is provided a method for forming a nitride film on a substrate to be processed by a thermal ALD which repeats: supplying a film forming raw material gas to the substrate to be processed while heating the substrate to be processed to a predetermined temperature; and supplying a nitriding gas to the substrate to be processed, the nitride film forming method comprises supplying a chlorine-containing gas to the substrate to be processed after the supplying the film forming raw material gas.

Abstract: There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.

Abstract: There is provided a boron nitride film forming method for forming a boron nitride film on a target substrate, including: a first operation of introducing a boron-containing gas and a nitriding gas into a process vessel which accommodates the substrate, and depositing an incompletely-nitrided and boron-rich nitride film on the substrate by CVD or ALD; and a second operation of introducing a nitriding gas into the process vessel and subjecting the boron-rich nitride film to a nitriding process, wherein the first operation and the second operation are performed at least one.

Abstract: A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R1, R2 and R3 in the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered.

Abstract: Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms.