Abstract: A semiconductor device includes: a first element for one of upper and lower arm circuits; a second element for the other of the upper and lower arm circuits; a first wiring having a first mounting portion on which the first element is disposed and a first power supply terminal portion connected with the first mounting portion; a second wiring having a second mounting portion on which the second element is disposed and an output terminal portion connected with the second mounting portion; a clip configured to electrically connect a main electrode of the first element and the second mounting portion; and a third wiring having a connection portion to which a main electrode of the second element is connected and a second power supply terminal portion connected with the connection portion. The third wiring is extended parallel to the first wiring and the clip.

Abstract: An image to be measured of a sample that is captured by a microscope is acquired, a first degree that indicates a degree in which the second layer (upper layer) of the sample transmits the first layer (lower layer) is acquired, a first layer template image and a second layer template image indicating pattern shapes of the first layer and the second layer are acquired, pattern matching processing of the second layer is performed based on the second layer template image and the image to be measured to acquire a second position deviation amount related to the second layer and an area recognized as the second layer on the image to be measured, a consideration range of the image to be measured in pattern matching processing of the first layer is determined based on the first degree and the area recognized as the second layer, pattern matching processing of the first layer is performed based on the first layer consideration range, the first layer template image, and the image to be measured to acquire a first posit

Abstract: A method, an apparatus, and a program for more appropriately determining a condition for appropriately recognizing a semiconductor pattern are provided. A method for determining a condition related to a captured image of a charged particle beam apparatus including: acquiring, by a processor, a plurality of captured images, each of the captured images being an image generated by irradiating a pattern formed on a wafer with a charged particle beam, and detecting electrons emitted from the pattern, each of the captured images being an image captured according to one or more imaging conditions, the method further including: acquiring teaching information for each of the captured images; acquiring, by the processor, one or more feature determination conditions; calculating, by the processor, a feature for each of the captured images based on each of the feature determination conditions, at least one of the imaging condition and the feature determination condition being plural.

Abstract: A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

Abstract: A charged particle beam device 1 includes: a plurality of detectors 7 for detecting a signal particle 9 emitted from a sample 8 irradiated with a charged particle beam 3 and converting the detected signal particle 9 into an output electrical signal 17; an energy discriminator 14 provided for each detector 7 and configured to discriminate the output electrical signal 17 according to energy of the signal particle 9; a discrimination control block 21 for setting an energy discrimination condition of each of the energy discriminators 14; and an image calculation block 22 for generating an image based on the discriminated electrical signal. The discrimination control block 21 sets energy discrimination conditions different from each other among the plurality of energy discriminators 14.

Abstract: In the present invention, an electro-optical condition generation unit includes: a condition setting unit that sets, as a plurality of electro-optical conditions, a plurality of electro-optical conditions in which the combinations of the aperture angle and the focal-point height for an electron beam are different; an index calculating unit that determines a measurement-performance index in the electro-optical conditions set by the condition setting unit; and a condition deriving unit that derives an electro-optical condition, including an aperture angle and a focal-point height, so that the measurement-performance index determined by the index calculating unit becomes a prescribed value.

Abstract: An electron microscope apparatus includes a detection unit that detects reflected electrons reflected from a sample when the sample is irradiated with primary electrons emitted by a primary electron generation unit (electron gun), an image generation unit that generates an image of a surface of the sample with the reflected electrons based on output from the detection unit, and a processing unit that generates a differential waveform signal of the image generated by the image generation unit, processes the image by using information of the differential waveform signal, and measures a dimension of a pattern formed on the sample.

Abstract: In the present invention, an electro-optical condition generation unit includes: a condition setting unit that sets, as a plurality of electro-optical conditions, a plurality of electro-optical conditions in which the combinations of the aperture angle and the focal-point height for an electron beam are different; an index calculating unit that determines a measurement-performance index in the electro-optical conditions set by the condition setting unit; and a condition deriving unit that derives an electro-optical condition, including an aperture angle and a focal-point height, so that the measurement-performance index determined by the index calculating unit becomes a prescribed value.

Abstract: A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

Abstract: An electron microscope apparatus includes a detection unit that detects reflected electrons reflected from a sample when the sample is irradiated with primary electrons emitted by a primary electron generation unit (electron gun), an image generation unit that generates an image of a surface of the sample with the reflected electrons based on output from the detection unit, and a processing unit that generates a differential waveform signal of the image generated by the image generation unit, processes the image by using information of the differential waveform signal, and measures a dimension of a pattern formed on the sample.