Patents by Inventor Takahiro ONUMA
Takahiro ONUMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230335392Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.Type: ApplicationFiled: April 13, 2023Publication date: October 19, 2023Inventors: Shinya Yoshimoto, Jhoelle Roche Guhit, Makoto Igarashi, Hideaki Fukuda, Aurelie Kuroda, Timothee Blanquart, Takahiro Onuma
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Publication number: 20230195022Abstract: An apparatus is configured to obtain operating information related to an operation amount of an image forming apparatus through the communication circuit, obtain another operating information related to another operation amount of another image forming apparatus located in a same installation location at which the image forming apparatus is located, determine, based on the operating information and the another operating information, a replacement timing for replacing a consumable component used in the image forming apparatus, and output the replacement timing.Type: ApplicationFiled: December 9, 2022Publication date: June 22, 2023Inventors: KATSUHIDE KOGA, TAKAHIRO ONUMA
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Publication number: 20220122841Abstract: Methods and systems for manufacturing a structure comprising a substrate are provided herein. In some embodiments, the substrate comprises a plurality of recesses. The recesses may be at least partially filled with a gap filling fluid. The gap filling fluid may comprise an Si—N bond.Type: ApplicationFiled: October 18, 2021Publication date: April 21, 2022Inventors: Timothee Blanquart, Takahiro Onuma, Shinya Yoshimoto, Charles Dezelah, Jihee Jeon
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Publication number: 20220119944Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.Type: ApplicationFiled: October 18, 2021Publication date: April 21, 2022Inventors: Shinya Yoshimoto, Takahiro Onuma, Makoto Igarashi, Yukihiro Mori, Hideaki Fukuda, Rene Henricus Jozef Vervuurt, Timothee Blanquart
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Patent number: 10793946Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: November 6, 2019Date of Patent: October 6, 2020Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Publication number: 20200291511Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: ApplicationFiled: November 6, 2019Publication date: September 17, 2020Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Patent number: 10480064Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: July 20, 2018Date of Patent: November 19, 2019Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Publication number: 20190055643Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: ApplicationFiled: July 20, 2018Publication date: February 21, 2019Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Patent number: 10041166Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: October 27, 2017Date of Patent: August 7, 2018Assignee: ASM IP Holding B.V.Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Patent number: 10014212Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: June 14, 2017Date of Patent: July 3, 2018Assignee: ASM IP HOLDING B.V.Inventors: Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Patent number: 9947582Abstract: Processes are provided herein for protecting metal thin films from oxidation when exposed to an oxidizing environment, such as the ambient atmosphere. The processes may comprise a protective treatment including exposing the metal thin film to a silicon-containing precursor at a temperature of about 200° C. or less in order to selectively adsorb a silicon-containing protective layer on the metal thin film. The silicon-containing protective layer may reduce or substantially prevent the underlying metal thin film from oxidation.Type: GrantFiled: June 2, 2017Date of Patent: April 17, 2018Assignee: ASM IP HOLDING B.V.Inventors: Aurélie Kuroda, Shang Chen, Takahiro Onuma, Dai Ishikawa
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Publication number: 20180080121Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: ApplicationFiled: October 27, 2017Publication date: March 22, 2018Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Patent number: 9921431Abstract: According to one embodiment, a display device includes a mount portion, a first metal layer, a second metal layer, an interlayer insulating film which is thinner in a non-display area than in a display area, a plurality of lines, a first end, a second end, wherein at least one of the first and second ends comprises a slit formed therein along a second direction from a display area side thereof to a opposite side of the display area side.Type: GrantFiled: December 2, 2015Date of Patent: March 20, 2018Assignee: Japan Display Inc.Inventor: Takahiro Onuma
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Publication number: 20170358482Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: ApplicationFiled: June 14, 2017Publication date: December 14, 2017Inventors: Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Patent number: 9803277Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: June 8, 2016Date of Patent: October 31, 2017Assignee: ASM IP HOLDING B.V.Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Patent number: 9805974Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: June 8, 2016Date of Patent: October 31, 2017Assignee: ASM IP HOLDING B.V.Inventors: Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
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Publication number: 20160187706Abstract: According to one embodiment, a display device includes a mount portion, a first metal layer, a second metal layer, an interlayer insulating film which is thinner in a non-display area than in a display area, a plurality of lines, a first end, a second end, wherein at least one of the first and second ends comprises a slit formed therein along a second direction from a display area side thereof to a opposite side of the display area side.Type: ApplicationFiled: December 2, 2015Publication date: June 30, 2016Applicant: Japan Display Inc.Inventor: Takahiro ONUMA
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Publication number: 20140225819Abstract: Data lines are connected to pixels arranged on both sides of the data lines respectively, a cth gate line and a (c+1)th gate line are connected respectively to pixels arranged between the cth gate line and the (c+1)th gate line alternately, in the case of displaying an image at a Nth frame, the first gate line driver circuit and the second gate line driver circuit supply the gate signal to the cth gate line and the (c+1)th gate line in this order, and in the case of displaying an image at a (N+1)th frame, the first gate line driver circuit and the second gate line driver circuit supply the gate signal to the (c+1)th gate line and the cth gate line in this order.Type: ApplicationFiled: February 3, 2014Publication date: August 14, 2014Applicant: Japan Display Inc.Inventors: Takahiro ONUMA, Kenji Harada, Satoshi Maruyama