Abstract: An apparatus is equipped with first and second rotary shaft 3, 4 and a plurality of disks 40, 50 provided upright at equal intervals on the respective rotary shaft. The disks are heated or cooled from the inside, and a raw material is heated or cooled by bringing it into contact with the disk surfaces. Scraper members 45, 45? and 55, 55? that enter between the surfaces of the facing adjacent disks to scrape the raw material are fixed to each of the disks 40, 50. The first and second rotary shafts 3, 4 are rotated at unequal speeds such that the scraper members approach the facing disk surfaces with trajectories drawn thereon varying, so that the raw material that has adhered to the disk surfaces can be effectively scraped off.

Abstract: A kneading apparatus has two rotary shafts mounted to undergo rotation in opposite directions at unequal speeds. Cubic-shaped kneading members having the same shape and size are detachably mounted to the rotary shafts so as to be arranged helically with an inverse helix from each other at a predetermined helical pitch and at predetermined angular pitch intervals for kneading an object during rotation of the rotary shafts. Each kneading member has side surfaces extending parallel to a rotational axis of the rotary shaft and front and rear surfaces extending perpendicular to the rotational axis. The side surfaces of each kneading member is curved in the shape of a concave. The rotary shafts are disposed close to one another so that tips of the kneading members on one of the rotary shafts enter into the concave curved surfaces of the opposing kneading members of the other of the rotary shafts without the opposing kneading members contacting one another during rotation of the rotary shafts.

Abstract: A kneading apparatus has a housing and first and second rotary shafts mounted in the housing in parallel to one another for undergoing rotation about respective axes in opposite directions at unequal speeds to one another for kneading an object. The first and second rotary shafts have respective first and second stirring members arranged helically at a predetermined helical pitch and at predetermined angular pitch intervals, with the second stirring members being arranged with an inverse helix from that of the first stirring members. Side blocking plates disposed in the housing partially block the kneaded object and move it between the first and second rotary shafts. The side blocking plates are spaced apart from one another to provide a space above the first and second rotary shafts such that the kneaded object can pass through the space in the axial direction of the first and second rotary shafts.

Abstract: Paddles Pn, Pn?, Qn, Qn? as kneading members are attached to two rotary shafts 3, 4 that rotate at unequal speeds in opposite directions so as to be arranged helically with an inverse helix from each other at a predetermined helical pitch and at predetermined angular pitch intervals. The rotary shafts are caused to rotate to knead an object to be kneaded. The paddles on both the rotary shaft are concavely curved at both side surfaces that extend in the axial direction of the rotary shafts. Both the rotary shafts are disposed in proximity so that, when they are caused to rotate, the distal end of each of the paddles on the one rotary shaft can enter into the concavely curved surfaces of the facing paddle on the other rotary shaft. The spacing between the facing paddles can be made small, so that high compressing and crushing effects are obtained.

Abstract: A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.

Abstract: A plurality of paddles Pn (n=1 to 17) is provided on an external periphery of a rotary shaft 3 so as to be arranged helically at a predetermined angular pitch of 90°, and a plurality of paddles Qn is provided on an external periphery of a rotary shaft 4 so as to be arranged helically at a predetermined angular pitch of 72°. The rotary shafts 3, 4 are made to rotate in opposite directions at unequal speeds to convey an object to be kneaded in one conveying direction along the rotary shafts 3, 4 while being kneaded by the paddles. The paddle surfaces of the paddles have either a normal phase for advancing the kneaded object in a feed direction or a reverse phase, and the paddles are arranged so that phases cyclically repeat in the sequence “normal, normal, reverse” in the axial direction of the rotary shafts.

Abstract: A kneading apparatus has a pair of rotary shafts mounted to undergo rotation in different directions of rotation and at different rotational speeds from one another. Stirring members are helically arranged on outer peripheries of the rotary shafts at predetermined helical and angular pitches for kneading an object during rotation of the rotary shafts. The helical pitch of the stirring members of one of the rotary shafts has an inverse helix from that of the stirring members of the other rotary shaft. The stirring members have surfaces with a first phase configured to move the kneaded object in a feed direction or a second phase symmetrical to the first phase and configured to move the kneaded object in a direction reverse to the feed direction. The stirring members are arranged so that the first and second phases cyclically repeat in a predetermined sequence in axial directions of the rotary shafts.

Abstract: A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.

Abstract: A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.

Abstract: The present invention provides a variable resistive element that can perform a stable switching operation at low voltage and low current, and also provides a low-power consumption large-capacity non-volatile semiconductor memory device including the variable resistive element. The non-volatile semiconductor memory device is a device using a variable resistive element, which includes a variable resistor between a first electrode and a second electrode, for storing information, wherein an oxygen concentration of a hafnium oxide (HfOx) film or a zirconium oxide (ZrOx) film constituting the variable resistor is optimized such that a stoichiometric composition ratio x of oxygen to Hf or Zr falls within a range of 1.7?x?1.97.

Abstract: Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art.

Abstract: A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.

Abstract: A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.

Abstract: A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.

Abstract: A plurality of paddles Pn (n=1 to 17) is provided on an external periphery of a rotary shaft 3 so as to be arranged helically at a predetermined angular pitch of 90°, and a plurality of paddles Qn is provided on an external periphery of a rotary shaft 4 so as to be arranged helically at a predetermined angular pitch of 72°. The rotary shafts 3, 4 are made to rotate in opposite directions at unequal speeds to convey an object to be kneaded in one conveying direction along the rotary shafts 3, 4 while being kneaded by the paddles. The paddle surfaces of the paddles have either a normal phase for advancing the kneaded object in a feed direction or a reverse phase, and the paddles are arranged so that phases cyclically repeat in the sequence “normal, normal, reverse” in the axial direction of the rotary shafts.

Abstract: A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.

Abstract: Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper electrode or a lower electrode, and a method for manufacturing the variable resistive element. The cross section of a current path, in which an electric current flows through between the two electrodes via the variable resistor body at the time of applying the voltage pulse to between the two electrodes, is formed with a line width of narrower than that of any of the two electrodes and of smaller than a minimum work dimension regarding manufacturing processes, so that its area can be made smaller than that of the electrically contributing region in the variable resistive element of the prior art.

Abstract: The present invention is directed towards a method of manufacturing a semiconductor memory device arranged of a cross point memory array having memory elements provided between upper and lower electrodes for storage of data. The present invention comprises a lower electrode lines forming step of planarizing each of the lower electrode lines and insulating layers provided on both sides of the lower electrode line so as to be substantially uniform in the height thus for patterning the lower electrode lines, a memory element layer depositing step of depositing on the lower electrode lines a memory element layer for the memory elements, and an annealing step of annealing with heat treatment either between the lower electrode lines forming step and the memory element layer depositing step or after the memory element layer depositing step so that any damages caused by the polishing of the surface of the lower electrode lines can be eliminated.

Abstract: A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.

Abstract: The present invention discloses a method for carrying out a loopback test in a data communication system having a first data communication station, a second data communication station and a transmission line connected therebetween. The first data communication station transmits a succession of a first pseudo-random noise signal, a loopback test signal and a second pseudo-random noise signal to the second data communication station by utilizing a usual information data channel, and requires no special channel for carrying out the loopback test. When the second data communication station detects the first pseudo-random noise signal, it transmits the loopback test signal to the first data communication station in order to check the coincidence of the transmitted and the received loopback test signals. The second pseudo-random noise signal denotes the end of the loopback test.