Abstract: A differential transmission cable includes a pair of signal lines, an insulation covering the pair of signal lines, and a shielding tape helically wound around the insulation. The shielding tape includes a conductor and an insulation layer that is formed on one surface of the conductor and that has a thickness of not less than 10 nm and less than 1 ?m.

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

Abstract: A metasurface includes a substrate including a light input surface into which input light is input and a light output surface facing the light input surface, and a plurality of V-shaped antenna elements disposed on the light output surface of the substrate and including a first arm and a second arm continuing on one end of the first arm. The each of the V-shaped antenna elements has a thickness in a range of 100 nm to 400 nm.

Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 ?m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.

Abstract: A differential signal transmission cable includes an insulated wire section including a pair of signal line conductors extending parallel to each other for transmitting a differential signal and an insulation covering the pair of signal line conductors, and a shield conductor including a band-shaped metal foil and spirally wound around the insulate wire section so as to overlap at a portion in a width direction thereof. An allowable elongation of the shield conductor as a stretchable limit in a longitudinal direction without breaking is not less than 2% at normal temperature.

Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.

Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

Abstract: A DFB laser element includes an active layer 4 having a multiple quantum well structure including a plurality of well layers 4B having different thicknesses, a diffraction grating layer 6 that is optically coupled to the active layer 4, and a pair of cladding layers with the active layer 4 and the diffraction grating layer 6 interposed therebetween. An effective refractive index of the diffraction grating layer 6 is high, and a thickness of the well layer 4B increases as a distance from the diffraction grating layer 6 increases. In this structure, it is possible to reduce dependence on temperature when the DFB semiconductor laser element is miniaturized.

Abstract: A differential signal transmission cable includes a conductor, a first dielectric covering the conductor, an outer conductor covering the first dielectric, a second dielectric covering the outer conductor and including a material with a higher transmission loss than the first dielectric, and a shield covering the second dielectric. A multi-core differential signal transmission cable includes a plurality of wires each including a conductor, a first dielectric covering the conductor and an outer conductor covering the first dielectric, a second dielectric covering all the plurality of wires and including a material with a higher transmission loss than the first dielectric, and a shield covering the second dielectric.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

Abstract: A device for deciding characteristics of a differential signal cable at a transmission rate of not less than 10 G baud includes a selector switch that changes a transmission rate or an output power of a test signal to be supplied to the differential signal cable, a signal transmitting circuit that generates a test signal at a different transmission rate or output power as one of the predetermined number of plurality of test signals according to the change of state of the selector switches and sends the generated test signal to the differential signal cable via one connector, and a signal receiving circuit that receives the test signal transmitted through the differential signal cable via the other connector and decides the success or failure of transmission of the test signal through the differential signal cable based on the received test signal and pre-stored data of the plurality of test signals.

Abstract: A differential transmission cable includes a pair of signal lines, an insulation covering the pair of signal lines, and a shielding tape that includes a conductor layer and an insulation layer formed on one surface of the conductor layer and is helically wound around the insulation. The diameter of the signal line is thinner than at least 30 AWG (American Wire Gauge), and differential characteristic impedance is not less than 80? and not more than 120?.

Abstract: An active cable that is capable of reducing crosstalk is provided. A ground pattern is formed so as to sandwich one or both of a part of a transmission side transmission channel located at a side closer to the other side than a compensation circuit and a part of a reception side transmission channel located at a side closer to the other side than the compensation circuit.

Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

Abstract: A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.

Abstract: A differential transmission cable includes a pair of signal lines, an insulation covering the pair of signal lines, and a shielding tape helically wound around the insulation. The shielding tape includes a conductor and an insulation layer that is formed on one surface of the conductor and that has a thickness of not less than 10 nm and less than 1 ?m.

Abstract: A DFB laser element includes an active layer 4 having a multiple quantum well structure including a plurality of well layers 4B having different thicknesses, a diffraction grating layer 6 that is optically coupled to the active layer 4, and a pair of cladding layers with the active layer 4 and the diffraction grating layer 6 interposed therebetween. An effective refractive index of the diffraction grating layer 6 is high, and a thickness of the well layer 4B increases as a distance from the diffraction grating layer 6 increases. In this structure, it is possible to reduce dependence on temperature when the DFB semiconductor laser element is miniaturized.