Patents by Inventor Takahisa Sugiman

Takahisa Sugiman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of cleaning semiconductor wafer and semiconductor wafer
    Patent number: 8992791
    Abstract: A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: March 31, 2015
    Assignee: Sumco Techxiv Corporation
    Inventors: Kazuaki Kozasa, Tomonori Kawasaki, Takahisa Sugiman, Hironori Nishimura
  • Nitrogen doped silicon wafer and manufacturing method thereof
    Patent number: 7875117
    Abstract: An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: January 25, 2011
    Assignee: Sumco Techxiv Corporation
    Inventors: Kouzo Nakamura, Susumu Maeda, Kouichirou Hayashida, Takahisa Sugiman, Katsuhiko Sugisawa
  • Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treated by the method
    Patent number: 7759227
    Abstract: A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.
    Type: Grant
    Filed: April 22, 2005
    Date of Patent: July 20, 2010
    Assignee: Sumco Techxiv Corporation
    Inventors: Susumu Maeda, Takahisa Sugiman, Shinya Sadohara, Shiro Yoshino, Kouzo Nakamura
  • METHOD OF CLEANING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER
    Publication number: 20100093177
    Abstract: A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer.
    Type: Application
    Filed: September 30, 2009
    Publication date: April 15, 2010
    Applicant: SUMCO TECHXIV CORPORATION
    Inventors: Kazuaki KOZASA, Tomonori KAWASAKI, Takahisa SUGIMAN, Hironori NISHIMURA
  • Silicon Semiconductor Substrate Heat-Treatment Method and Silicon Semiconductor Substrate Treated by the Method
    Publication number: 20070252239
    Abstract: A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing atmosphere. The heat-treatment method is provided for forming a desired internal defect density distribution by controlling a nitrogen concentration distribution in a depth direction of the silicon wafer for heat-treatment, the method including heat-treating a predetermined silicon wafer used for manufacturing a silicon wafer having a denuded zone in the vicinity of the surface thereof.
    Type: Application
    Filed: April 22, 2005
    Publication date: November 1, 2007
    Applicant: KOMATSU ELECTRONIC METALS CO., LTD.
    Inventors: Susumu Maeda, Takahisa Sugiman, Shinya Sadohara, Shiro Yoshino, Kouzo Nakamura
  • NITORGEN DOPED SILICON WAFER AND MANUFACTURING METHOD THEREOF
    Publication number: 20070218570
    Abstract: An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a silicon crystal doped with nitrogen at the time of crystal growth can be derived from the nitrogen concentration and the cooling rate around 1100° C. during crystal growth, and the oxygen precipitate density to be obtained after a heat treatment can be predicted from the derived relational equation relating the oxygen precipitate density to the radius, the oxygen concentration, and the wafer heat treatment process. Also, an epitaxially grown wafer and a high-temperature annealed wafer whose oxygen precipitate density has been controlled to an appropriate density are obtained, using conditions predicted by the method.
    Type: Application
    Filed: August 11, 2005
    Publication date: September 20, 2007
    Applicant: KOMATSU ELECTRONIC METALS CO., LTD
    Inventors: Kouzo Nakamura, Susumu Maeda, Kouichirou Hayashida, Takahisa Sugiman, Katsuhiko Sugisawa