Abstract: A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and is composed of Pb(Zr, Ti)O3 containing Mn as an additive. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.

Abstract: A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and has a perovskite structure including Pb(Mg1/3, Nb2/3)O3. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.

Abstract: A piezoelectric element includes a lower electrode layer, an upper electrode layer, an orientation control layer disposed between the lower electrode layer and the upper electrode layer, and a piezoelectric layer formed on an upper surface of the orientation control layer. The piezoelectric layer is oriented in a (001) plane or a (100) plane and has a perovskite structure including Pb(Zn1/3, Nb2/3)O3. The orientation control layer has a perovskite structure, is oriented in the (001) plane or the (100) plane, and contains a part of components forming the piezoelectric layer, as an additive.

Abstract: Provided are a structure including: a substrate; a first layer provided on the substrate; a second layer provided on the first layer; and a third layer provided on the second layer, in which the first layer is a layer containing a compound represented by a chemical formula MIn2O4 using M as a metal element, the second layer is a metal layer having a face-centered cubic structure, and the third layer is a ferroelectric film, and a sensor using the structure.

Abstract: The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

Abstract: A piezoelectric functional film includes a base layer and a piezoelectric layer. The piezoelectric layer contains niobium-doped lead zirconate titanate. The base layer contains one of niobium-doped lead titanate, (niobium, lanthanum)-doped lead titanate, and (niobium, lanthanum, magnesium)-doped lead titanate.

Abstract: A piezoelectric functional film includes a base layer and a piezoelectric layer. The piezoelectric layer contains niobium-doped lead zirconate titanate. The base layer contains one of niobium-doped lead titanate, (niobium, lanthanum)-doped lead titanate, and (niobium, lanthanum, magnesium)-doped lead titanate.

Abstract: Provided are a structure including: a substrate; a first layer provided on the substrate; a second layer provided on the first layer; and a third layer provided on the second layer, in which the first layer is a layer containing a compound represented by a chemical formula MIn2O4 using M as a metal element, the second layer is a metal layer having a face-centered cubic structure, and the third layer is a ferroelectric film, and a sensor using the structure.

Abstract: The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

Abstract: The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a (001) orientation only. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers (where x represents a value of not less than 0 and not more than 1). The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.

Abstract: Provided is a novel actuator and a method for driving the same. The present invention is an actuator comprising a first laminate comprising a first (Bi, Na, Ba) TiO3 layer between first and second electrode layers, a second laminate comprising a second (Bi, Na, Ba) TiO3 layer between third and fourth electrode layers, and a tilt part provided between the first and second laminates. Both of the first and second (Bi, Na, Ba) TiO3 layers are preferentially oriented in a [011] crystalline axis direction. Voltages V5a, V9a, V5b, and V9b which satisfy Requirement A: V5a>V9a and V5b<V9b or Requirement B: V5a<V9a and V5b>V9b are applied to the first-fourth electrode layers so as to tilt the tilt part. One of the first edge and the second edge is moved in the [011] crystalline axis direction and the other is moved in the reverse direction thereof.

Abstract: Provided is a piezoelectric thin film including a non-lead-containing (that is, lead-free) ferroelectric material and having high piezoelectric performance comparable to that of PZT, and a method of manufacturing the piezoelectric thin film. The piezoelectric film according to the present invention comprises a laminate structure. The laminate structure comprises an electric film and a (1-x)(Na,Bi)TiO3-xBaTiO3 film. x represents a value of not less than 0.03 and not more than 0.15. The (1-x)(Na,Bi)TiO3-xBaTiO3 film has a (110) surface orientation only. The (1-x)(Na,Bi)TiO3-xBaTiO3 film has an orthorhombic crystal structure only.

Abstract: The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a (001) orientation only. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers (where x represents a value of not less than 0 and not more than 1). The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.

Abstract: In order to provide a non-lead piezoelectric film having high crystalline orientation, low dielectric loss, high polarization-disappear temperature, and high piezoelectric constant, the present invention is a piezoelectric film comprising: a NaxM1-x layer 13 having a (001) orientation only; and a (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer 15 having a (001) orientation only. The (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer 15 is formed on the NaxM1-x layer 13. M represents Pt, Ir, or PtIr. Q represents Fe, Co, Zn0.5Ti0.5, or Mg0.5Ti0.5. x represents a value of not less than 0.002 and not more than 0.02. ? represents a value of not less than 0.20 and not more than 0.50.

Abstract: The present invention provides a piezoelectric film having a higher polarization-disappearance temperature Td and the usage thereof. The piezoelectric film of the present invention comprising an interface layer of (Nax1, Biy1)TiO0.5x1+1.5y1+2-BaTiO3 layer having a (001) orientation only and a piezoelectric layer of a (Nax2, Biy2)TiO0.5x2+1.5y2+2-BaTiO3 layer having a (001) orientation only, where x1 is 0.28-0.43, y1 is 0.49-0.60, x2 is 0.30-0.46, and y2 is 0.51-0.63. The piezoelectric layer is formed on the interface layer. The interface layer contains nickel. The interface layer has a Ni/Ti molar ratio of not less than 0.02.

Abstract: Provided is an NBT-BT lead-free piezoelectric film having a high crystalline orientation and a high piezoelectric constant. The present invention is a piezoelectric film comprising a NaxM1-x layer and a (Bi, Na)TiO3—BaTiO3 layer. The (Bi, Na) TiO3—BaTiO3 layer is formed on the NaxM1-x layer, where M represents Pt, Ir, or PtIr and x represents a value of not less than 0.002 and not more than 0.02. Both of the NaxM1-x layer and the (Bi, Na) TiO3—BaTiO3 layer have a (001) orientation only, a (110) orientation only, or a (111) orientation only.

Abstract: The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a NaxLa1-x+yNi1-yO3-x layer having only an (001) orientation and a (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer having only an (001) orientation. The (1-?) (Bi, Na, Ba) TiO3-?BiQO3 layer is formed on the NaxLa1-x+yNi1-yO3-x layer. The character of Q represents Fe, Co, Zn0.5Ti0.5, or Mg0.5Ti0.5 The character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of ? represents a value of not less than 0.20 and not more than 0.50.

Abstract: A piezoelectric film comprising comprises a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer with a (110) orientation, where 0.30?x?0.46 and 0.51?y?0.62, and the (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer has composition around a Morphotropic Phase Boundary.

Abstract: The purpose of the present invention is to provide an angular velocity sensor capable of measuring an exact angular velocity, an ink jet head capable of producing an exact amount of ink, and a piezoelectric generating element capable of generating electric power due to positive piezoelectric effect. In the present invention, a piezoelectric film comprising a first electrode, a piezoelectric layer, and a second electrode is used. The first electrode comprises an electrode layer having a (001) orientation. The piezoelectric layer comprises a (NaxBiy)TiO0.5x+1.5y+2—BaTi03 layer (0.30?x?0.46 and 0.51?y?0.62) having a (001) orientation.

Abstract: The purpose of the present invention is to provide an ink jet head capable of ejecting an exact amount of ink, an angular velocity sensor capable of measuring an exact angular velocity, and a piezoelectric generating element capable of generating an electric power due to positive piezoelectric effect, even when the applied electric field of 40 kV/cm or more is applied. The piezoelectric film used for the present invention comprises a piezoelectric layer and first and second electrodes which sandwich the piezoelectric layer therebetween, the first electrode comprises a (001) orientation, the piezoelectric layer is composed of (1-z)(NaxBiy)TiO0.5x+1.5y+2-zBaTiO3 having a (001) orientation, x is not less than 0.30 and not more than 0.46, y is not less than 0.51 and not more than 0.62, and z is not less than 0.07 and not more than 0.09.