Patents by Inventor Takako Furuse

Takako Furuse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound
    Patent number: 5567661
    Abstract: A method of manufacturing a semiconductor device including the steps of: preparing a semiconductor substrate having convexities and concavities on the surface thereof; and generating plasma by using organic silicon having silazane bonding and oxidant and depositing a planarized insulating film on the semiconductor substrate by plasma chemical vapor deposition. The organic silicon may be HMCTSZ and the substrate temperature during deposition is preferably not higher than about 100.degree. C., e.g. 50.degree. C.
    Type: Grant
    Filed: June 3, 1994
    Date of Patent: October 22, 1996
    Assignee: Fujitsu Limited
    Inventors: Hidetoshi Nishio, Takako Furuse, Yumiko Hamada, Hiroyuki Uesugi