Abstract: Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 ?m or greater exists at a density of 1 pore/cm3 or less.

Abstract: Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 ?m or greater exists at a density of 1 pore/cm3 or less.

Abstract: Provided are an indium target that can favorably inhibit the occurrence of arcing, and a method for producing the indium target. The indium target having a surface arithmetic average roughness (Ra) of 1.6 ?m or less.

Abstract: The present invention provides a multi-layered structure, where contamination of impurities into indium target is excellently prevented, and manufacturing method thereof. The multi-layered structure comprises: a backing plate, an impurity diffusion prevention layer, comprising thin film consisting of one or more metals selected from Fe, W, Ta, Te, Nb, Mo, S and Si, formed on the backing plate, and an indium target, formed on the impurity diffusion prevention layer.

Abstract: An indium oxide-tin oxide powder for ITO display devices etc. with only slight variance in properties such as average particle diameter and apparent density is prepared stably with good controllability and at low cost: (1) by electrolyzing indium as an anode, calcining or roasting the indium hydroxide obtained and combining the resulting indium oxide powder with a tin oxide powder; (2) by electrolyzing tin as an anode, calcining or roasting the metastannic acid obtained and combining the resulting tin oxide powder with an indium oxide powder; (3) by simultaneously electrolyzing indium and tin as separate anodes and then calcining or roasting the resulting mixed precipitate of indium hydroxide and metastannic acid to produce an indium oxide-tin oxide powder; or (4) by electrolyzing an alloy of indium and tin as an anode and then calcining or roasting the resulting precipitate of indium hydroxide and metastannic acid to produce an indium oxide-tin oxide powder.