Patents by Inventor Takamasa Miyazaki
Takamasa Miyazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942411Abstract: RC-IGBT chips and RC-IGBT chips correspond to a pair of adjacent RC-IGBT chips in an X direction between the RC-IGBT chips. The RC-IGBT chips satisfy a first arrangement condition in which the chips are separately arranged without a bonding point region and a bonding point region overlapping each other in a Y direction, and a second arrangement condition in which, in the Y direction, the chips are arranged to partially overlap so that a part of emitter electrodes excluding the bonding point region and the bonding point region overlap. The RC-IGBT chips also satisfy the first and second arrangement conditions described above.Type: GrantFiled: December 29, 2021Date of Patent: March 26, 2024Assignee: Mitsubishi Electric CorporationInventors: Takamasa Miyazaki, Keisuke Eguchi
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Patent number: 11923673Abstract: A semiconductor device includes: a switching device including a main portion and a current sensing portion for detecting a current value of the main portion; a control IC including a gate drive unit that drives the switching device; a sensing resistor connected between an emitter of the main portion and an emitter of the current sensing portion and formed inside the control IC; a comparator comparing a sense voltage applied to the sensing resistor with a reference voltage; and a shut-down circuit shutting down an energization of the switching device when the sense voltage exceeds the reference voltage, wherein the sense voltage is more than or equal to 1 V when the energization of the switching device is shut down.Type: GrantFiled: March 29, 2022Date of Patent: March 5, 2024Assignee: Mitsubishi Electric CorporationInventors: Keisuke Eguchi, Takamasa Miyazaki
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Publication number: 20230108305Abstract: A semiconductor apparatus includes: an insulating substrate; a plurality of power semiconductor devices arranged in line on the insulating substrate; and a plurality of control semiconductor devices arranged in line on the insulating substrate so as to face the plurality of power semiconductor devices respectively and driving the plurality of power semiconductor devices, wherein the control semiconductor devices at both ends of the plurality of control semiconductor devices arranged in line are arranged closer to the corresponding power semiconductor devices than the control semiconductor devices which are other than the control semiconductor devices at both ends.Type: ApplicationFiled: May 4, 2022Publication date: April 6, 2023Applicant: Mitsubishi Electric CorporationInventors: Takamasa MIYAZAKI, Keisuke EGUCHI
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Publication number: 20230100056Abstract: A semiconductor device includes: a switching device including a main portion and a current sensing portion for detecting a current value of the main portion; a control IC including a gate drive unit that drives the switching device; a sensing resistor connected between an emitter of the main portion and an emitter of the current sensing portion and formed inside the control IC; a comparator comparing a sense voltage applied to the sensing resistor with a reference voltage; and a shut-down circuit shutting down an energization of the switching device when the sense voltage exceeds the reference voltage, wherein the sense voltage is more than or equal to 1 V when the energization of the switching device is shut down.Type: ApplicationFiled: March 29, 2022Publication date: March 30, 2023Applicant: Mitsubishi Electric CorporationInventors: Keisuke EGUCHI, Takamasa MIYAZAKI
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Publication number: 20220319974Abstract: RC-IGBT chips and RC-IGBT chips correspond to a pair of adjacent RC-IGBT chips in an X direction between the RC-IGBT chips. The RC-IGBT chips satisfy a first arrangement condition in which the chips are separately arranged without a bonding point region and a bonding point region overlapping each other in a Y direction, and a second arrangement condition in which, in the Y direction, the chips are arranged to partially overlap so that a part of emitter electrodes excluding the bonding point region and the bonding point region overlap. The RC-IGBT chips also satisfy the first and second arrangement conditions described above.Type: ApplicationFiled: December 29, 2021Publication date: October 6, 2022Applicant: Mitsubishi Electric CorporationInventors: Takamasa MIYAZAKI, Keisuke EGUCHI
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Patent number: 11254698Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.Type: GrantFiled: December 4, 2019Date of Patent: February 22, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soyoung Lee, Hiroshi Nihei, Takamasa Miyazaki, Yousuke Satou, Kouhei Sugimoto, Masashi Shirai, Jaesoon Lim, Younsoo Kim, Younjoung Cho
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Publication number: 20200339618Abstract: The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.Type: ApplicationFiled: December 4, 2019Publication date: October 29, 2020Inventors: Soyoung Lee, Hiroshi Nihei, Takamasa Miyazaki, Yousuke Satou, Kouhei Sugimoto, Masashi Shirai, Jaesoon Lim, Younsoo Kim, Younjoung Cho
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Patent number: 9656942Abstract: A method manufactures diethyl carbonate by reaction distillation where transesterification and distillation are simultaneously performed in a multistage reaction distillation column provided with a catalyst introduction port and a raw material introduction port located below the catalyst introduction port, wherein: (a) the reaction is performed in a countercurrent flow format in which contact is brought about between a transesterification catalyst, dimethyl carbonate, and ethanol; (e) 1 to 250 mmol of catalyst is used per mole of dimethyl carbonate; (f) the ratio of the volume of air in the catalyst introduction port and the raw material introduction port regarding the volume of air in the reaction distillation part is 0.1 to 0.9; (g) the recirculation ratio in the reaction distillation column is 0.5 to 10; and (h) the temperature of the top part of the column and the reaction distillation part is 60 to 100° C.Type: GrantFiled: October 15, 2013Date of Patent: May 23, 2017Assignee: Ube Industries, Ltd.Inventors: Hirofumi Ii, Tatsuya Naitou, Kazuki Yamamoto, Katsuyoshi Kudou, Akira Hino, Tadaaki Kaneko, Takamasa Miyazaki, Tomoyuki Itou
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Publication number: 20150291504Abstract: A method manufactures diethyl carbonate by reaction distillation where transesterification and distillation are simultaneously performed in a multistage reaction distillation column provided with a catalyst introduction port and a raw material introduction port located below the catalyst introduction port, wherein: (a) the reaction is performed in a countercurrent flow format in which contact is brought about between a transesterification catalyst, dimethyl carbonate, and ethanol; (e) 1 to 250 mmol of catalyst is used per mole of dimethyl carbonate; (f) the ratio of the volume of air in the catalyst introduction port and the raw material introduction port regarding the volume of air in the reaction distillation part is 0.1 to 0.9; (g) the recirculation ratio in the reaction distillation column is 0.5 to 10; and (h) the temperature of the top part of the column and the reaction distillation part is 60 to 100° C.Type: ApplicationFiled: October 15, 2013Publication date: October 15, 2015Inventors: Hirofumi Ii, Tatsuya Naitou, Kazuki Yamamoto, Katsuyoshi Kudou, Akira Hino, Tadaaki Kaneko, Takamasa Miyazaki, Tomoyuki Itou