Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1?dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X?1.05?d?A1·exp(?X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1?a2)(Zrb1Tib2?b3)Oc, where 0.5<a1/(b1+b2+b3)<1.07.

Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1?dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X?1.05?d?A1·exp(?X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1?a2)(Zrb1Tib2?b3)Oc, where 0.5<a1/(b1+b2+b3)<1.07.

Abstract: A piezoelectric device and a manufacturing method thereof in which a piezoelectric film formed of a thin film of a lead zirconate titanate-based perovskite oxide is formed on a substrate, and at least a first region out of the first region and a second region of the piezoelectric film is irradiated with electromagnetic waves having a wavelength of 230 nm or less in a reducing atmosphere to provide a difference in piezoelectric characteristics between the first region and the second region so that the first region has a smaller absolute value of a piezoelectric constant d31 and a smaller dielectric loss tan ? than the second region.

Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0<x<1 and y satisfies 0.10?y<0.13, I(200)/I(100), which is a ratio between a diffraction peak intensity I(100) from the perovskite plane and a diffraction peak intensity I(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85?I(200)/I(100)?1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.

Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0<x<1 and y satisfies 0.10?y<0.13, I(200)/I(100), which is a ratio between a diffraction peak intensity I(100) from the perovskite plane and a diffraction peak intensity I(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85?I(200)/I(100)?1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.

Abstract: Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 ?m, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 ?m and a relative permittivity of more than or equal to 80.

Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.

Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1?x)1?aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.

Abstract: Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d31 (pm/V), a relative dielectric constant ? (?), and a dielectric loss tan ? (?) satisfy (d31)2/(?×tan ?×1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided. Pbx[(ZraTi1-a)1-yNby]Oz??(P) (in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.

Abstract: Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 ?m, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 ?m and a relative permittivity of more than or equal to 80.

Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1-x)1-aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.

Abstract: Provided is a cleaning device that can reduce maintenance-time while injecting a cleaning solution into a gap between head modules so that the cleaning solution or the like is not sucked into an inkjet head. The position of the inkjet head relative to a spray-nozzle is moved in one direction. When relative movement is performed, the relative movement is temporarily stopped or moving speed of the relative movement is reduced at a position where the gap between the head modules faces at least the spray-nozzle. The cleaning solution is sprayed to the gap at a time when the relative movement is temporarily stopped or when the moving speed of the relative movement is reduced. A removing member removing the cleaning solution present in the gap, is provided at a position separated from the spray-nozzle in the one direction by a distance of n times a pitch of the gaps.

Abstract: The present invention provides a method for manufacturing a water-repellent film, including an adhesion precursor film forming step of forming, on a substrate, an adhesion precursor film mainly of a Si—O bond with hydrogen directly bonded to Si; an irradiating step of irradiating the adhesion precursor film with excitation energy to increase an OH group present on a surface of the adhesion precursor film to thereby change the adhesion precursor film into an adhesion reinforcing film; and an organic film coating step of coating the adhesion reinforcing film with an organic film by using a silane coupling agent, wherein a content of the hydrogen directly bonded to Si in the adhesion precursor film is 1.0×1017 atoms/cm2 or more in terms of a H2 molecule.

Abstract: Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d31 (pm/V), a relative dielectric constant ?(?), and a dielectric loss tan ?(?) satisfy (d31)2/(?×tan ?×1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided. Pbx[(ZraTi1?a)1?yNby]Oz??(P) (in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.

Abstract: The present invention provides a method for manufacturing a water-repellent film, including an adhesion precursor film forming step of forming, on a substrate, an adhesion precursor film mainly of a Si—O bond with hydrogen directly bonded to Si; an irradiating step of irradiating the adhesion precursor film with excitation energy to increase an OH group present on a surface of the adhesion precursor film to thereby change the adhesion precursor film into an adhesion reinforcing film; and an organic film coating step of coating the adhesion reinforcing film with an organic film by using a silane coupling agent, wherein a content of the hydrogen directly bonded to Si in the adhesion precursor film is 1.0×1017 atoms/cm2 or more in terms of a H2 molecule.

Abstract: A method of manufacturing a water repellent film includes, before a formation step of forming an organic film on a substrate using a silane coupling agent by a vapor phase deposition method under film formation conditions, a step of specifying the film formation conditions using a test substrate of a same material as the substrate used in the formation step. The film formation condition specifying step includes: specifying film formation temperature to be not lower than a temperature at which the silane coupling agent evaporates and to be lower than a temperature at which the silane coupling agent bumps; and forming an organic film of the silane coupling agent on the test substrate at the specified film formation temperature, measuring by optical microscopic observation a time at which a bead of surplus water repellent material is formed, and specifying the film formation duration to be shorter than the measured time.

Abstract: A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3??(P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.

Abstract: A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTi1-c)1-dBd]Oe,??(P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a<1, a+b?1, and 0<d<b; and a value of e is within a range where the perovskite structure is obtained and e=3 is standard.

Abstract: A method of driving a piezoelectric actuator including: a piezoelectric element containing a piezoelectric body having coercive field points on a negative field side and a positive field side respectively and having asymmetrical bipolar polarization—electric field hysteresis characteristics in which an absolute value of a coercive electric field on the negative field side and a coercive electric field value on the positive field side are mutually different, and a pair of electrodes for applying voltage to the piezoelectric body; and a diaphragm which externally transmits, as displacement, distortion produced in the piezoelectric body when the voltage is applied to the piezoelectric body, includes the step of driving the piezoelectric actuator between a positive drive voltage and a negative drive voltage in a range not exceeding the coercive electric field, from among the positive and negative coercive electric fields, which has the larger absolute value.