Patents by Inventor Takami Arakawa

Takami Arakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11985899
    Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1?dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X?1.05?d?A1·exp(?X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1?a2)(Zrb1Tib2?b3)Oc, where 0.5<a1/(b1+b2+b3)<1.07.
    Type: Grant
    Filed: December 1, 2021
    Date of Patent: May 14, 2024
    Assignee: FUJIFILM Corporation
    Inventors: Kenichi Umeda, Yukihiro Okuno, Takami Arakawa
  • Publication number: 20220093844
    Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1?dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X?1.05?d?A1·exp(?X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1?a2)(Zrb1Tib2?b3)Oc, where 0.5<a1/(b1+b2+b3)<1.07.
    Type: Application
    Filed: December 1, 2021
    Publication date: March 24, 2022
    Applicant: FUJIFILM Corporation
    Inventors: Kenichi UMEDA, Yukihiro OKUNO, Takami ARAKAWA
  • Publication number: 20210143316
    Abstract: A piezoelectric device and a manufacturing method thereof in which a piezoelectric film formed of a thin film of a lead zirconate titanate-based perovskite oxide is formed on a substrate, and at least a first region out of the first region and a second region of the piezoelectric film is irradiated with electromagnetic waves having a wavelength of 230 nm or less in a reducing atmosphere to provide a difference in piezoelectric characteristics between the first region and the second region so that the first region has a smaller absolute value of a piezoelectric constant d31 and a smaller dielectric loss tan ? than the second region.
    Type: Application
    Filed: January 20, 2021
    Publication date: May 13, 2021
    Inventors: Takami ARAKAWA, Takayuki NAONO
  • Patent number: 10388851
    Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0<x<1 and y satisfies 0.10?y<0.13, I(200)/I(100), which is a ratio between a diffraction peak intensity I(100) from the perovskite plane and a diffraction peak intensity I(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85?I(200)/I(100)?1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: August 20, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Daigo Sawaki, Takami Arakawa
  • Patent number: 10217929
    Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: February 26, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Naoki Murakami, Takamichi Fujii, Takami Arakawa
  • Publication number: 20180351075
    Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0<x<1 and y satisfies 0.10?y<0.13, I(200)/I(100), which is a ratio between a diffraction peak intensity I(100) from the perovskite plane and a diffraction peak intensity I(200) from a perovskite plane as measured by X-ray diffraction method, satisfies 0.85?I(200)/I(100)?1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.
    Type: Application
    Filed: July 19, 2018
    Publication date: December 6, 2018
    Applicant: FUJIFILM Corporation
    Inventors: Daigo SAWAKI, Takami ARAKAWA
  • Patent number: 10147868
    Abstract: Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 ?m, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 ?m and a relative permittivity of more than or equal to 80.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: December 4, 2018
    Assignee: FUJIFILM Corporation
    Inventors: Shin Ozawa, Takami Arakawa
  • Publication number: 20180254406
    Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+?B1-x-yNbxNiyOz??General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1?x?0.3 and 0?y?0.75x. Although standard values of ? and z are ?=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.
    Type: Application
    Filed: May 1, 2018
    Publication date: September 6, 2018
    Applicant: FUJIFILM Corporation
    Inventors: Naoki MURAKAMI, Takamichi FUJII, Takami ARAKAWA
  • Patent number: 10011111
    Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1?x)1?aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: July 3, 2018
    Assignee: FUJIFILM Corporation
    Inventors: Naoki Murakami, Takami Arakawa, Takamichi Fujii
  • Publication number: 20180130942
    Abstract: Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d31 (pm/V), a relative dielectric constant ? (?), and a dielectric loss tan ? (?) satisfy (d31)2/(?×tan ?×1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided. Pbx[(ZraTi1-a)1-yNby]Oz??(P) (in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.
    Type: Application
    Filed: January 3, 2018
    Publication date: May 10, 2018
    Applicant: FUJIFILM Corporation
    Inventor: Takami ARAKAWA
  • Publication number: 20170373243
    Abstract: Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 ?m, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 ?m and a relative permittivity of more than or equal to 80.
    Type: Application
    Filed: September 11, 2017
    Publication date: December 28, 2017
    Applicant: FUJIFILM Corporation
    Inventors: Shin OZAWA, Takami ARAKAWA
  • Publication number: 20170157931
    Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1-x)1-aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.
    Type: Application
    Filed: February 22, 2017
    Publication date: June 8, 2017
    Applicant: FUJIFILM Corporation
    Inventors: Naoki MURAKAMI, Takami ARAKAWA, Takamichi FUJII
  • Publication number: 20160144627
    Abstract: Provided is a cleaning device that can reduce maintenance-time while injecting a cleaning solution into a gap between head modules so that the cleaning solution or the like is not sucked into an inkjet head. The position of the inkjet head relative to a spray-nozzle is moved in one direction. When relative movement is performed, the relative movement is temporarily stopped or moving speed of the relative movement is reduced at a position where the gap between the head modules faces at least the spray-nozzle. The cleaning solution is sprayed to the gap at a time when the relative movement is temporarily stopped or when the moving speed of the relative movement is reduced. A removing member removing the cleaning solution present in the gap, is provided at a position separated from the spray-nozzle in the one direction by a distance of n times a pitch of the gaps.
    Type: Application
    Filed: January 29, 2016
    Publication date: May 26, 2016
    Applicant: FUJIFILM Corporation
    Inventors: Yuichi OZAKI, Takami ARAKAWA, Yasukazu NIHEI
  • Patent number: 9242466
    Abstract: The present invention provides a method for manufacturing a water-repellent film, including an adhesion precursor film forming step of forming, on a substrate, an adhesion precursor film mainly of a Si—O bond with hydrogen directly bonded to Si; an irradiating step of irradiating the adhesion precursor film with excitation energy to increase an OH group present on a surface of the adhesion precursor film to thereby change the adhesion precursor film into an adhesion reinforcing film; and an organic film coating step of coating the adhesion reinforcing film with an organic film by using a silane coupling agent, wherein a content of the hydrogen directly bonded to Si in the adhesion precursor film is 1.0×1017 atoms/cm2 or more in terms of a H2 molecule.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: January 26, 2016
    Assignees: FUJIFILM Corporation, Material Design Factory Co., Ltd.
    Inventors: Takami Arakawa, Hiroshi Nakayama
  • Publication number: 20160020381
    Abstract: Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d31 (pm/V), a relative dielectric constant ?(?), and a dielectric loss tan ?(?) satisfy (d31)2/(?×tan ?×1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided. Pbx[(ZraTi1?a)1?yNby]Oz??(P) (in Formula (P), x represents a lead content, y represents a Nb content (B site doping amount), z represents an oxygen content, a represents a Zr/Ti ratio, and y>0.14, and although x=1.0 and z=3 is standard, numerical values of x and z may deviate from 1.0 and 3, respectively, within a range where a perovskite structure can be adopted.
    Type: Application
    Filed: September 30, 2015
    Publication date: January 21, 2016
    Applicant: FUJIFILM Corporation
    Inventor: Takami ARAKAWA
  • Publication number: 20150306874
    Abstract: The present invention provides a method for manufacturing a water-repellent film, including an adhesion precursor film forming step of forming, on a substrate, an adhesion precursor film mainly of a Si—O bond with hydrogen directly bonded to Si; an irradiating step of irradiating the adhesion precursor film with excitation energy to increase an OH group present on a surface of the adhesion precursor film to thereby change the adhesion precursor film into an adhesion reinforcing film; and an organic film coating step of coating the adhesion reinforcing film with an organic film by using a silane coupling agent, wherein a content of the hydrogen directly bonded to Si in the adhesion precursor film is 1.0×1017 atoms/cm2 or more in terms of a H2 molecule.
    Type: Application
    Filed: July 6, 2015
    Publication date: October 29, 2015
    Applicants: FUJIFILM Corporation, Material Design Factory Co., Ltd.
    Inventors: Takami ARAKAWA, Hiroshi NAKAYAMA
  • Patent number: 9012670
    Abstract: A method of manufacturing a water repellent film includes, before a formation step of forming an organic film on a substrate using a silane coupling agent by a vapor phase deposition method under film formation conditions, a step of specifying the film formation conditions using a test substrate of a same material as the substrate used in the formation step. The film formation condition specifying step includes: specifying film formation temperature to be not lower than a temperature at which the silane coupling agent evaporates and to be lower than a temperature at which the silane coupling agent bumps; and forming an organic film of the silane coupling agent on the test substrate at the specified film formation temperature, measuring by optical microscopic observation a time at which a bead of surplus water repellent material is formed, and specifying the film formation duration to be shorter than the measured time.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: April 21, 2015
    Assignee: FUJIFILM Corporation
    Inventor: Takami Arakawa
  • Patent number: 8801150
    Abstract: A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3??(P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: August 12, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Yoshikazu Hishinuma, Takehiro Kasahara, Yasukazu Nihei, Takamichi Fujii, Yuuichi Okamoto, Takami Arakawa, Takayuki Naono
  • Patent number: 8672456
    Abstract: A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTi1-c)1-dBd]Oe,??(P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a<1, a+b?1, and 0<d<b; and a value of e is within a range where the perovskite structure is obtained and e=3 is standard.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: March 18, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Takami Arakawa, Takayuki Naono, Takamichi Fujii
  • Patent number: 8562112
    Abstract: A method of driving a piezoelectric actuator including: a piezoelectric element containing a piezoelectric body having coercive field points on a negative field side and a positive field side respectively and having asymmetrical bipolar polarization—electric field hysteresis characteristics in which an absolute value of a coercive electric field on the negative field side and a coercive electric field value on the positive field side are mutually different, and a pair of electrodes for applying voltage to the piezoelectric body; and a diaphragm which externally transmits, as displacement, distortion produced in the piezoelectric body when the voltage is applied to the piezoelectric body, includes the step of driving the piezoelectric actuator between a positive drive voltage and a negative drive voltage in a range not exceeding the coercive electric field, from among the positive and negative coercive electric fields, which has the larger absolute value.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: October 22, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Takamichi Fujii, Yoshikazu Hishinuma, Yoshinori Katoh, Takami Arakawa, Takayuki Naono