Abstract: A chemically amplified, positive resist composition comprising an organic solvent, a polymer having acid labile groups, a photoacid generator, a basic compound, and a compound containing at least two allyloxy groups is provided. The resist composition has a high sensitivity, resolution, dry etching resistance and process adaptability, and is improved in the slimming of a pattern film after development with an aqueous base solution. The resist composition is also applicable to the thermal flow process suited for forming a microsize contact hole pattern for the fabrication of VLSI.

Abstract: A chemical amplification type resist composition uses as the base resin a polymer having a molecular weight dispersity of 1.0 to 1.5 which is a polymer comprising recurring units of formula (1) and recurring units of formula (2) or a polymer comprising recurring units of formula (2) wherein R1 is alkyl, alkoxyalkyl, acetyl or carbonylalkoxy, 0<p/(p+q)≦1, R2 is hydrogen or methyl, and R3 is a tertiary hydrocarbon group of 4 to 30 carbon atoms. By virtue of the narrow dispersity effect of the polymer, the resist composition is improved in resolution as compared with prior art base resins having a wide dispersity. Advantages including a high resolution, good pattern profile and storage stability are obtained.

Abstract: A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

Abstract: A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

Abstract: A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.

Abstract: A silacyclohexane compound of the formulas (I) ##STR1## wherein R represents an organic residue, ##STR2## represents an unsubstituted or substituted silicon-containing cyclohexylene group or a 1,4-cyclohexylene group, ##STR3## represents an unsubstituted or substituted phenylene, an unsubstituted or substituted silicon-containing cyclohexylene group or trans-4-sila-1,4-cyclohexylene group, or a 1,4-cyclohexylene group provided that at least one of these residues represents a silicon-containing cyclohexylene group, m, n, i, k and l are, respectively, 0 or 1 provided that j+l=0 or 1 and m+k=1 or 2, L.sub.1 and L.sub.2, respectively, represent H or F, m and n are, respectively, 0 or 1, X.sub.1 and Y independently represent H, F or Cl, and X.sub.2 represents F or Cl. A liquid crystal composition comprising the silacyclohexane compound of the above formula is also described, along with a liquid crystal device comprising the composition.

Abstract: For the purpose of improving the characteristics of a liquid crystal substance, there is provided a silacyclohexane compound represented by the general formula (I): ##STR1## wherein R represents a specific straight-chain alkyl group, mono or difluoro alkyl group, branched-chain alkyl group, alkoxyalkyl group, and alkenyl group; at least one of rings A and B represent a trans-1-sila-1,4-cyclohexylene group or a trans-4-sila-1,4-cyclohexylene group both having a substituent group H, F, Cl, CH.sub.3 or Ar (Ar stands for a phenyl or tolyl group) on silicon at the 1 or 4 position, and the other group, if any, represents a trans-1,4-cyclohexylene group or ##STR2## Z represents CN, F, Cl, CF.sub.3, CClF.sub.2, CHClF, OCF.sub.3, OCClF.sub.2, OCHF.sub.2, OCHClF, R, or OR; L.sub.1 represents H, F or Cl; L.sub.2 and L.sub.3 stand independently for H or F; i represents an integer of 0 to 2; m is 1 or 2; n is 0 or 1; and if m is 2, the two rings may be the same or different.