Abstract: A slider (1) has a slider body (2), a tab (5), and a locking pawl (6) having a claw portion (61). An upper blade (21) of the slider body (2) has an insert groove (32) into which the locking pawl (6) is inserted, a temporary engagement portion (34) for temporary engaging and fixing the locking pawl (6), and a claw hole (37) formed so that the claw portion (61) can be inserted therethrough. The locking pawl (6) is provided such that the claw portion (61) can be inserted into and detached from an element guide lane (28) through the claw hole (37) by elevating and lowering the tab (5). The temporary engagement portion (34) is adapted so that, with the locking pawl (6) fixed in position, the position in height of the upper end of the temporary engagement portion (34) is the same as or lower than that of the upper surface of the upper blade (21). This prevents the temporary engagement portion (34) from being pressed and crushed when the temporary engagement portion is in contact with the tab (5) and other members.

Abstract: The reverse opening type slide fastener has a separable bottom end stop including upper and lower sliders, wherein a stopper for preventing the lower slider from slipping off is provided at the bottom end of a box pin. A first engaging portion is formed on an opposite side edge opposite to an insert pin of the box pin and a second engaging portion is formed on an opposite side edge opposite to the box pin of the insert pin to position the insert pin in a downward direction when the second engaging portion engages the first engaging portion. A projecting portion which makes contact with the inner face of the blade of the upper slider to suppress a free sliding of the upper slider, is formed on at least any one of front and rear side faces opposite to the inner face of the blade of the upper slider of the box pin.

Abstract: The reverse opening type slide fastener has a separable bottom end stop including upper and lower sliders, wherein a stopper for preventing the lower slider from slipping off is provided at the bottom end of a box pin. A first engaging portion is formed on an opposite side edge opposite to an insert pin of the box pin and a second engaging portion is formed on an opposite side edge opposite to the box pin of the insert pin to position the insert pin in a downward direction when the second engaging portion engages the first engaging portion. A projecting portion which makes contact with the inner face of the blade of the upper slider to suppress a free sliding of the upper slider, is formed on at least any one of front and rear side faces opposite to the inner face of the blade of the upper slider of the box pin.

Abstract: The present invention provides a slider for a concealed type slide fastener with a separable bottom end stop capable of restoring a status to a normal one when an insert pin is inserted with an abnormal status, wherein a recess is provided in a shoulder mouth of a lower blade sideways of a diamond erected from a body of the slider and a slope is formed on a side wall sideways of the diamond and a rear mouth side of the recess, and the slope of the side wall restores the fastener tape into a parallel condition quickly and after that, the insert pin can be inserted into a box, thereby attaching the bottom end stop smoothly and easily.

Abstract: A fastener wherein right and left side edge portions can be engaged using a magnetic force, and which can be applied preferably for plastic article such as clothes and further prevented from being opened carelessly even if a lateral pulling force is applied when right and left elements are engaged.

Abstract: A data memory device is provided that is capable of reading data accurately even if the reading action is repeated. Respective output ends of memory cells D0-D7 and input ends on one side of respective exclusive OR elements Eo0-Eo7 are interconnected, and the output end of a polarity holding cell Dc and the input ends on the other side of the respective exclusive OR elements Eo0-Eo7 are interconnected. When it is assumed that the stored value of the memory cell D0 is a logic “1” and the stored value of the polarity holding cell Dc is a logic “0,” the value of the output data Do0 read out becomes a logic “1”. By the reversal writing action that follows, the value of the memory cell D0 becomes a logic “0” and the stored value of the polarity holding cell Dc becomes a logic “1.” When the value of the memory cell D0 is read again in that state, the value of the output data Do0 is still a logic “1.

Abstract: A semiconductor memory device including a memory element for storing data, and a supplemental element substantially electrically associated with the memory element at least at the time of reading data. The semiconductor memory device is for reading data stored in the memory element by applying specified electric action to the compound element including the memory element and the supplemental element substantially electrically mutually associated. The semiconductor memory device is characterized in that the electric characteristic of the supplemental element is adapted to be variable based on a signal for changing the electric characteristic of the supplemental element so that data may be read free from troubles.

Abstract: A nonvolatile semiconductor memory which includes a voltage supply terminal, a multiplicity of memory cells, a voltage selection circuit, and a voltage dropping circuit. The terminal receives a supply voltage from an external voltage source. The voltage selection circuit is coupled to the terminal for selectively outputting a first and a second voltage to be supplied to the memory cells. The voltage dropping circuit is coupled between the voltage selection circuit and the memory cells for dropping the second voltage output from the voltage selection circuit before it is input to the memory cells.

Abstract: A semiconductor memory device is provided that can accurately read data for an extended period of time. A comparator CMPn for measuring a data judgment voltage produced at the time of reading data is connected to bit lines BLn and BLnB. The comparator CMPn is connected through a low voltage detecting section 12 to a loading capacitance control section 14. Capacitors ECU1, EC12, . . . are connected to the bit line BLn through transistors ST11, ST12, . . . A loading capacitor LCn1 is constituted with capacitors chosen by the loading capacitance control section 14 from the capacitors EC11, EC12, . . . A loading capacitor LCn2 is constituted likewise. When the data judgment voltage decreases due to deterioration of ferroelectric capacitors FC1 and FC2, the decrease is detected with the low voltage detecting section 12 and the loading capacitance control section 14 changes the respective constitutions of the loading capacitors LCn1 and LCn2. Thus, the data judgment voltage is restored.

Abstract: A data memory device is provided that is capable of reading data accurately even if the reading action is repeated. Respective output ends of memory cells D0-D7 and input ends on one side of respective exclusive OR elements Eo0-Eo7 are interconnected, and the output end of a polarity holding cell Dc and the input ends on the other side of the respective exclusive OR elements Eo0-Eo7 are interconnected. When it is assumed that the stored value of the memory cell DO is a logic “1” and the stored value of the polarity holding cell Dc is a logic “0,” the value of the output data Do0 read out becomes a logic “1”. By the reversal writing action that follows, the value of the memory cell D0 becomes a logic “0” and the stored value of the polarity holding cell Dc becomes a logic “1.” When the value of the memory cell D0 is read again in that state, the value of the output data Do0 is still a logic “1.

Abstract: A revolving magnetic field type motor has a rotor and a stator. The rotor has a plurality of permanent magnets. The permanent magnets defines a plurality of rotor magnetic poles. The number of the rotor magnetic poles is “P”. The rotor has a plurality of blocks aligned in the rotor's axial direction. The number of the blocks is “m”. Each block has a set of the rotor permanent magnets. One set of the permanent magnets is offset relative to an adjacent set of the permanent magnets by a predetermined offset angle in the rotor's rotational direction. The stator has a plurality of coils, the coils defining a plurality of stator magnetic poles around the axis of the stator, the number of the stator magnetic poles being “T”. The predetermined offset angle is selected from within a range from about zero degrees/((m−1)×n) to about 22.5 degrees/((m−1)×n).

Abstract: In a ferroelectric memory and a method of manufacturing it, a metallic layer 30 of Ni, which is silicified at a temperature lower than the temperature when a ferroelectric layer FL looses ferroelectricity non-reversibly, is formed so as to be partially brought into contact with the upper surface of one of the source/drain regions 26. Thereafter, the metallic layer 30 is; heated at the temperature lower than the temperature when the ferroelectric layer FL looses the ferroelectricity non-reversibly. Thus, the metallic layer 30 is silicified to form a silicide layer 31. Therefore, without deteriorating the function of the ferroelectric layer FL, the portion of the metallic layer 30 which is contact with the upper surface of the source/drain region 26 can be sufficiently silicified. Ni has a very weak reduction/catalysis function for the ferroelectric layer FL. Therefore, the metallic layer 30 not silicified does not adversely affect the ferroelectric layer FL in the post manufacturing steps.

Abstract: A nonvolatile memory element capable of using desired ferroelectric materials, exhibiting a high reliability and performing processings such as reading of information without destruction of stored contents is provided. A memory cell comprises two capacitors Cf1 and Cf2 connected to each other in series. Both capacitors are ferroelectric capacitors manufactured by the same steps. Accordingly, the coupling ratio between both capacitors can be changed by only the change of surface areas thereof. A voltage corresponding to the information to be stored is applied to the opposite ends of the memory cell 20 to cause polarization reversal and as a result, the information is written thereinto. In order to read the stored information, a ground potential is applied to the opposite ends of the memory cell 20. On the basis of the potential generated at a connection 20c upon the application of the ground potential, the information can be read.

Abstract: A non-volatile semiconductor memory includes a ferroelectric memory cell 3 and a voltage detection circuit 2. The voltage detecting circuit 2 monitors the drop of a power supply voltage and cuts off the power supply voltage when it is lower than a prescribed voltage so that the memory cell 3 is not operated. In addition, in response to a control input signal, a control circuit 1 is provided to control the power supply voltage so that it is not cut off even when it is lower than the prescribed voltage. In this configuration, the non-volatile semiconductor memory device can be sufficiently subjected to the screening test for a short time without suffering from stress for a long time.

Abstract: The present invention relates to a structure of semiconductor chip joint for mounting a plurality of semiconductor chips onto a single package.