Patents by Inventor Takao Inada
Takao Inada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11742226Abstract: A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.Type: GrantFiled: December 26, 2019Date of Patent: August 29, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Takahiko Otsu, Kazuya Koyama, Takao Inada
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Patent number: 11724235Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.Type: GrantFiled: March 12, 2020Date of Patent: August 15, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Jun Nonaka, Takao Inada, Kouji Ogura
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Patent number: 11424141Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.Type: GrantFiled: October 19, 2018Date of Patent: August 23, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Jian Zhang, Takao Inada, Hisashi Kawano, Seigo Fujitsu, Hideaki Sato, Teruaki Konishi, Toshiyuki Shiokawa, Koji Ogura, Hiroshi Yoshida
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Publication number: 20220139734Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.Type: ApplicationFiled: January 17, 2022Publication date: May 5, 2022Inventors: Kouji OGURA, Jun NONAKA, Takao INADA, Yoshinori NISHIWAKI, Hiroshi YOSHIDA
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Patent number: 11309194Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.Type: GrantFiled: January 30, 2018Date of Patent: April 19, 2022Assignee: Tokyo Electron LimitedInventors: Koji Tanaka, Toshiyuki Shiokawa, Koji Yamashita, Hiroyuki Masutomi, Hitoshi Kosugi, Takao Inada, Takashi Ikeda, Tsukasa Hirayama
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Patent number: 11257692Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.Type: GrantFiled: March 12, 2020Date of Patent: February 22, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Kouji Ogura, Jun Nonaka, Takao Inada, Yoshinori Nishiwaki, Hiroshi Yoshida
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Publication number: 20210335621Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: ApplicationFiled: July 6, 2021Publication date: October 28, 2021Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Patent number: 11087992Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: GrantFiled: January 31, 2020Date of Patent: August 10, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Patent number: 11075096Abstract: A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.Type: GrantFiled: November 6, 2019Date of Patent: July 27, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Takao Inada, Hironobu Hyakutake, Hisashi Kawano
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Patent number: 10923368Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.Type: GrantFiled: October 19, 2018Date of Patent: February 16, 2021Assignee: Tokyo Electron LimitedInventors: Takao Inada, Hisashi Kawano, Hiroki Ohno
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Publication number: 20200294823Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.Type: ApplicationFiled: March 12, 2020Publication date: September 17, 2020Inventors: Kouji Ogura, Jun Nonaka, Takao Inada, Yoshinori Nishiwaki, Hiroshi Yoshida
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Publication number: 20200289994Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.Type: ApplicationFiled: March 12, 2020Publication date: September 17, 2020Inventors: Jun Nonaka, Takao Inada, Kouji Ogura
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Publication number: 20200251343Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: ApplicationFiled: January 31, 2020Publication date: August 6, 2020Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Publication number: 20200211865Abstract: A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.Type: ApplicationFiled: December 26, 2019Publication date: July 2, 2020Inventors: Takahiko Otsu, Kazuya Koyama, Takao Inada
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Publication number: 20200152489Abstract: A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.Type: ApplicationFiled: November 6, 2019Publication date: May 14, 2020Inventors: Takao Inada, Hironobu Hyakutake, Hisashi Kawano
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Patent number: 10651061Abstract: A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.Type: GrantFiled: October 18, 2018Date of Patent: May 12, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroki Ohno, Takao Inada, Hisashi Kawano
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Patent number: 10643874Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.Type: GrantFiled: June 8, 2017Date of Patent: May 5, 2020Assignee: Tokyo Electron LimitedInventors: Hiroshi Tanaka, Tsukasa Hirayama, Takao Inada
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Publication number: 20190148183Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.Type: ApplicationFiled: October 19, 2018Publication date: May 16, 2019Inventors: Takao Inada, Hisashi Kawano, Hiroki Ohno
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Publication number: 20190122906Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.Type: ApplicationFiled: October 19, 2018Publication date: April 25, 2019Inventors: Jian Zhang, Takao Inada, Hisashi Kawano, Seigo Fujitsu, Hideaki Sato, Teruaki Konishi, Toshiyuki Shiokawa, Koji Ogura, Hiroshi Yoshida
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Publication number: 20190122905Abstract: A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.Type: ApplicationFiled: October 18, 2018Publication date: April 25, 2019Inventors: Hiroki Ohno, Takao Inada, Hisashi Kawano