Abstract: The disclosure reduces the risk of collapse of the wall surrounding the trench and suppresses the withstand voltage fluctuation that accompanies the manufacturing variation for a semiconductor device having a super junction structure. The semiconductor device includes a drift layer of a first conductivity type and a plurality of embedded parts embedded in the drift layer. The embedded parts are of a second conductivity type different from the first conductivity type, and the embedded parts are arranged with a first direction as a longitudinal direction and spaced from each other along a second direction that intersects the first direction. A width of each of the embedded parts in the second direction changes continuously along the first direction.

Abstract: The disclosure reduces the risk of collapse of the wall surrounding the trench and suppresses the withstand voltage fluctuation that accompanies the manufacturing variation for a semiconductor device having a super junction structure. The semiconductor device includes a drift layer of a first conductivity type and a plurality of embedded parts embedded in the drift layer. The embedded parts are of a second conductivity type different from the first conductivity type, and the embedded parts are arranged with a first direction as a longitudinal direction and spaced from each other along a second direction that intersects the first direction. A width of each of the embedded parts in the second direction changes continuously along the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.

Abstract: A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.

Abstract: Disclosed is a semiconductor device including: a semiconductor substrate; first and second element isolating trenches that are formed in one main surface of the semiconductor substrate separately from each other; a first insulating material that is formed within the first element isolating trench; a plurality of first element formation regions that are surrounded by the first element isolating trench; first semiconductor elements that are respectively formed in the first element formation regions; a second insulating material that is formed within the second element isolating trench; a second element formation region that is surrounded by the second element isolating trench; a second semiconductor element that is formed in the second element formation region; and a stress relaxation structure that is formed between the first element isolating trench and the second element isolating trench.

Abstract: Disclosed is a semiconductor device including: a semiconductor substrate; first and second element isolating trenches that are formed in one main surface of the semiconductor substrate separately from each other; a first insulating material that is formed within the first element isolating trench; a plurality of first element formation regions that are surrounded by the first element isolating trench; first semiconductor elements that are respectively formed in the first element formation regions; a second insulating material that is formed within the second element isolating trench; a second element formation region that is surrounded by the second element isolating trench; a second semiconductor element that is formed in the second element formation region; and a stress relaxation structure that is formed between the first element isolating trench and the second element isolating trench.

Abstract: Disclosed is a semiconductor device including: a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle ? (0°<?<90°) from the first direction.