Abstract: The present invention relates to a thermal transfer sheet, comprising a substrate; a heat-resistant sliding layer provided on one surface of the substrate; and a dye layer comprising at least a dye and a binder resin provided on the other surface of the substrate, wherein the binder resin comprises a styrene-containing polyol resin, which which meets a demand for speeding up of printing speed of thermal transfer, and densification and quality improvement of thermally transferred images, particularly meets to a demand for densification of thermally transferred images and in which the migration of dyes to the heat-resistant sliding layer and the scumming are prevented.

Abstract: Disclosed is a method selective of vapor phase etching for fabricating a semiconductor device having a refractory metal silicide electrode abutting a silicon oxide film on the surface or a semiconductor device having an AlGaAs layer, an electrode formed on the AlGaAs layer and a silicon oxide film on the surface of the semiconductor device. The method comprises a step of removing a portion of the silicon oxide film by a gas including a vapor of hydrogen fluoride. The method further uses a mixture of nitrogen gas including vapor of anhydrous hydrofluoric acid and a nitrogen gas including a vapor of H.sub.2 O, wherein the ratio of the nitrogen gas including the vaporized anhydrous hydrofluoric acid to the nitrogen gas including vapor of H.sub.2 O is less than 1.

Abstract: In a liquid crystal projector having a light source and liquid crystal panel units disposed in the optical paths, reflecting means is disposed on the emanating side of the projector for reflecting the light in a direction approximately perpendicular to the optical axis, and change-over means is coupled to the liquid crystal panel units for reversing the lateral directions of images.

Abstract: A method of capless annealing for an ion implanted substrate of a group III-V compound semiconductor, wherein said ion implanted substrate is placed in an inert ambient with a temperature ranging between 500 to 1000 degrees centigrade and a pressure ranging from 30 to 90 atmospheres, thereby increasing the deep energy level EL 2 concentration in the surface portion of a semiconductor substrate. The resistivity of the compound semiconductor substrate is increased in accordance with the deep energy level EL 2 concentration. This method is conducive to maintenance of the isolation between adjacent semiconductor elements fabricated on the group III-V compound semiconductor substrate.