Abstract: A method comprising contact-free positioning a template mask wafer having a template device pattern relative to a predetermined surface area section of a device pattern wafer. The template mask wafer includes a semitransparent layer. The method includes contact-free aligning one or more mask alignment marks of the template mask wafer with one or more alignment marks of the device pattern wafer and contacting the mask wafer on the device pattern wafer. The method includes transferring a template device pattern of the template mask wafer onto the predetermined surface area section of the device pattern wafer using an electron beam while heat conduction is distributed throughout the mask wafer to maintain a low temperature rise in the mask wafer during the transferring. A system is also provided.

Abstract: An approach is provided for transferring one or more device patterns of a template mask wafer onto a device pattern wafer. The approach includes positioning a template mask wafer on a device pattern wafer. The template mask wafer may include a membrane formed in a substrate layer, a first layer on a first back surface of the substrate layer, one or more mask alignment marks and one or more template device patterns in the membrane, and a second layer on a second back surface of the first layer. The device pattern wafer may include a semiconductor wafer, a third layer on a semiconductor wafer, one or more alignment marks in the third layer, and a fourth layer on the third layer. The approach includes aligning the one or more mask alignment marks with the one or more alignment marks. The approach includes transferring one or more template device patterns onto the device pattern wafer.

Abstract: A method comprising contact-free positioning a template mask wafer having a template device pattern relative to a predetermined surface area section of a device pattern wafer. The template mask wafer includes a semitransparent layer. The method includes contact-free aligning one or more mask alignment marks of the template mask wafer with one or more alignment marks of the device pattern wafer and contacting the mask wafer on the device pattern wafer. The method includes transferring a template device pattern of the template mask wafer onto the predetermined surface area section of the device pattern wafer using an electron beam while heat conduction is distributed throughout the mask wafer to maintain a low temperature rise in the mask wafer during the transferring. A system is also provided.

Abstract: The system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns (wherein the housing unit has a hollow column section for releasing an electron beam, and a micro deflection unit is disposed inside for adjusting the inclination of the electron beam), a movable stage capable of moving in the X-Y directions, a wafer stage disposed on the movable stage to support a semiconductor wafer, a mask wafer having struts on its rear side for supporting membranes on which a pattern to be transferred is formed, a mask stage for holding the mask wafer, a matching detection unit for detecting a misalignment between the mask wafer and the semiconductor wafer, and an inclination means connected to the micro deflection unit and the matching detection unit for inclining the electron beam.

Abstract: The system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns (wherein the housing unit has a hollow column section for releasing an electron beam, and a micro deflection unit is disposed inside for adjusting the inclination of the electron beam), a movable stage capable of moving in the X-Y directions, a wafer stage disposed on the movable stage to support a semiconductor wafer, a mask wafer having struts on its rear side for supporting membranes on which a pattern to be transferred is formed, a mask stage for holding the mask wafer, a matching detection unit for detecting a misalignment between the mask wafer and the semiconductor wafer, and an inclination means connected to the micro deflection unit and the matching detection unit for inclining the electron beam.

Abstract: A low energy electron beam lithography system uses an 2 KeV electron beam of about two hundred microamperes, a 4 Division Complementary Mask (4DCM) formed from a monocrystalline silicon wafer with membranes about 100 nm thick that are surrounded by supporting silicon struts, and spaced about 50 microns from an electron sensitive resist layer about 20 nm thick that covers a nonmetallic conductive layer that covers a semiconductor wafer. Distortions in the 4DCM and semiconductor wafer are sensed and an error distortion signal is generated that results in the electron beam being tilted so as to compensate for the distortions to minimize image placement errors.

Abstract: In an electron beam proximity exposure apparatus comprising an electron beam source, which emits a collimated electron beam, a mask substrate on which a plurality of masks with apertures are formed, a mask moving mechanism, which moves the mask substrate, and a stage, which holds and moves an object, the mask moving mechanism moves the mask substrate so that one of the plurality of masks is arranged on a path of the electron beam in proximity to a surface of the object, and a pattern corresponding to the aperture of the one of the plurality of masks is exposed on the surface of the object with the electron beam having passed through the aperture. Thus, the frequency of taking the mask out of the apparatus to exchange the mask is reduced, so that the throughput of the apparatus is improved.

Abstract: The electron beam proximity exposure apparatus comprises: an electron beam source which emits an electron beam; an electron beam shaping device which shapes the electron beam; a mask which has an aperture and is disposed on a path of the shaped electron beam; a deflecting and scanning device which deflects the electron beam to scan the mask with the shaped electron beam; and a stage which holds and moves an object, wherein the mask is disposed in proximity to a surface of the object, and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, wherein the electron beam shaping device shapes the electron beam into a slender beam of which cross section has a small width in a direction of the scanning and a large width in a direction perpendicular to the direction of the scanning.

Abstract: The mask inspecting apparatus is incorporated into an electron beam proximity exposure apparatus in which a mask is arranged in proximity to a wafer, and a mask pattern formed on the mask is transferred onto a resist layer on the wafer by scanning the mask with an electron beam. The mask inspecting apparatus comprises a scanning electron microscope (SEM) arranged on a wafer stage, and a stage drive device which shifts the wafer stage so that an electron detector of the SEM can receive electrons originating from the electron beam transmitting through the mask pattern of the mask in an inspection of the mask. The SEM thereby capture an image of the mask pattern on the lower face of the mask. Thus, the mask inspection can be performed using an electron beam intended for use in proximity exposure in the electron beam proximity exposure apparatus.

Abstract: The electronic beam proximity exposure apparatus comprises: an electron beam proximity exposure section which exposes a pattern corresponding to an aperture of a mask on a surface of an object with an electron beam having passed through the aperture of the mask, the mask being disposed in proximity to the surface of the object; a mask inspecting section which inspects the mask; and a mask carrying mechanism which carries the mask between the electron beam proximity exposure section and the mask inspecting section, and is characterized in that the electron beam proximity exposure section, the mask inspecting section and the mask carrying mechanism are communicated with one another through a common vacuum path so that the mask can be carried in a vacuum condition between the electron beam proximity exposure section and the mask inspecting section.

Abstract: A compact and low-cost electron beam proximity exposure apparatus with high throughput has been disclosed. The apparatus comprises vacuum chamber, a mobile stage that is contained in the vacuum chamber and moves while holding plural specimens, and plural electron beam proximity exposure sections that are provided to the vacuum chamber additionally and use beams of electron passing through the openings of masks arranged in close proximity to each surface of the plural specimens to form patterns corresponding to the openings by exposure on the surfaces of the specimens.

Abstract: The mask inspecting apparatus is incorporated into an electron beam proximity exposure apparatus in which a mask is arranged in proximity to a wafer, and a mask pattern formed on the mask is transferred onto a resist layer on the wafer by scanning the mask with an electron beam. The mask inspecting apparatus comprises a scanning electron microscope (SEM) arranged on a wafer stage, and a stage drive device which shifts the wafer stage so that an electron detector of the SEM can receive electrons originating from the electron beam transmitting through the mask pattern of the mask in an inspection of the mask. The SEM thereby captures an image of the mask pattern on the lower face of the mask. Thus, the mask inspection can be performed using an electron beam intended for use in proximity exposure in the electron beam proximity exposure apparatus.

Abstract: A method for manufacturing a mask which is used in an electron beam proximity exposure apparatus comprising an electron beam source which emits a collimated electron beam, the mask having an aperture which is arranged on a path of the electron beam, and a stage which holds and moves an object, wherein the mask is arranged in proximity to a surface of the object and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, the method comprises the steps of: dividing the mask into a plurality of partial areas, and forming a plurality of partial masks which have apertures with patterns identical with the plurality of partial areas, respectively; and manufacturing the mask by exposing the patterns of the plurality of partial masks on corresponding positions of a mask substrate in an electron beam proximity exposure method.

Abstract: The electron beam proximity exposure apparatus comprises: an electron beam source which emits an electron beam; an electron beam shaping device which shapes the electron beam; a mask which has an aperture and is disposed on a path of the shaped electron beam; a deflecting and scanning device which deflects the electron beam to scan the mask with the shaped electron beam; and a stage which holds and moves an object, wherein the mask is disposed in proximity to a surface of the object, and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, wherein the electron beam shaping device shapes the electron beam into a slender beam of which cross section has a small width in a direction of the scanning and a large width in a direction perpendicular to the direction of the scanning.

Abstract: A method for manufacturing an object mask which is used in an electron beam proximity exposure apparatus comprising an electron beam source which emits a collimated electron beam, the object mask having an aperture which is arranged on a path of the electron beam, and a stage which holds and moves an object, wherein the object mask is arranged in proximity to a surface of the object and a pattern corresponding to the aperture of the object mask is exposed on the surface of the object with the electron beam having passed through the aperture, the method comprising the steps of: manufacturing a master mask having an aperture of a pattern identical with the object mask; and manufacturing a child mask by exposing an aperture pattern identical with the master mask by using the master mask in an electron beam proximity exposure method, wherein the child mask is used as the object mask. Thus, a manufacturing method of the masks for the electron beam proximity exposure at reduced costs is accomplished.

Abstract: A method for manufacturing a mask which is used in an electron beam proximity exposure apparatus comprising an electron beam source which emits a collimated electron beam, the mask having an aperture which is arranged on a path of the electron beam, and a stage which holds and moves an object, wherein the mask is arranged in proximity to a surface of the object and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, the method comprises the steps of: dividing the mask into a plurality of partial areas, and forming a plurality of partial masks which have apertures with patterns identical with the plurality of partial areas, respectively; and manufacturing the mask by exposing the patterns of the plurality of partial masks on corresponding positions of a mask substrate in an electron beam proximity exposure method.

Abstract: In an electron beam proximity exposure apparatus comprising an electron beam source, which emits a collimated electron beam, a mask substrate on which a plurality of masks with apertures are formed, a mask moving mechanism, which moves the mask substrate, and a stage, which holds and moves an object, the mask moving mechanism moves the mask substrate so that one of the plurality of masks is arranged on a path of the electron beam in proximity to a surface of the object, and a pattern corresponding to the aperture of the one of the plurality of masks is exposed on the surface of the object with the electron beam having passed through the aperture. Thus, the frequency of taking the mask out of the apparatus to exchange the mask is reduced, so that the throughput of the apparatus is improved.

Abstract: A low energy electron beam lithography system uses an 2 KeV electron beam of about three microamperes, a mask formed from a monocrystalline silicon wafer with a membrane thinned to about 0.5 micron, and spaced from an electron-beam sensitive resist-coated substrate about 50 microns and with the thickness of the resist of about 0.1 micron.