Abstract: A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

Abstract: A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

Abstract: A power transmission unit of a wireless power feeding device supplies power to two or more moving bodies wirelessly by using magnetic field resonance. The power transmission unit includes a power transmission coil, a high frequency generation unit, capacitor circuit groups, and a control unit. The capacitor circuit groups have series capacitors connected in series with the power transmission coil and parallel capacitors connected in parallel to the switching elements for generating a high frequency, and the capacitor circuit groups are set together with the power transmission coil so as to have different impedances to each other. The control unit that controls a switch for connecting and disconnecting the capacitor circuit groups according to the number of the moving bodies to which electrical power is supplied from the power transmission coil.

Abstract: An annealing object is held at a position on which a laser beam output from a laser light source is incident. An infrared detector detects heat radiation light from the annealing object. An optical element which does not allow light having a wavelength shorter than 1 ?m to be incident on the infrared detector is disposed in a pathway of the heat radiation light from the annealing object to the infrared detector.

Abstract: A power transmission unit of a wireless power feeding device supplies power to two or more moving bodies wirelessly by using magnetic field resonance. The power transmission unit includes a power transmission coil, a high frequency generation unit, capacitor circuit groups, and a control unit. The capacitor circuit groups have series capacitors connected in series with the power transmission coil and parallel capacitors connected in parallel to the switching elements for generating a high frequency, and the capacitor circuit groups are set together with the power transmission coil so as to have different impedances to each other. The control unit that controls a switch for connecting and disconnecting the capacitor circuit groups according to the number of the moving bodies to which electrical power is supplied from the power transmission coil.

Abstract: An annealing object is held at a position on which a laser beam output from a laser light source is incident. An infrared detector detects heat radiation light from the annealing object. An optical element which does not allow light having a wavelength shorter than 1 ?m to be incident on the infrared detector is disposed in a pathway of the heat radiation light from the annealing object to the infrared detector.

Abstract: A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.