Abstract: An electrical device may be provided with: a housing having a side surface; and a connector opening provided on the side surface of the housing and to which a connector is connected. The side surface includes a groove surrounding the connector opening, the connector includes a ring-shaped rib fitted into the groove, the connector has an upper surface and a lower surface that are inclined as viewed along a normal direction of the side surface, and a lower end of the lower surface includes a step protruding downward, the side surface includes a drain hole at a position below the step, and the drain hole communicates inside of the groove and underside of the groove.

Abstract: An automatic tool exchange system which allows a tool management mode to be arbitrarily selectable between a fixed address scheme and a memory random scheme in operation of the same machining center. The control unit for controlling the respective drive units of the tool exchanger and the magazine includes a storage unit for storing tool information containing a registered correspondence relationship between the tools and corresponding addresses of the stowage parts of the magazine, a modifying unit for modifying the tool information, and a tool exchange instruction unit for sequentially designating the tool to be used in each of the machining steps in accordance with the machining program, and driving the magazine to move the stowage part at the address corresponding to the designated tool to a predetermined position based on the tool information so that the tool is located at the exchange position at a predetermined timing.

Abstract: A thermal radiation light source includes a laminated body including m quantum layers laminated where m is an integer of 2 or more, including an n-layer and a p-layer sandwiching the quantum layers from both sides in the laminating direction, the n-layer made of an n-type semiconductor and the p-layer made of a p-type semiconductor; a voltage applying unit for the m quantum layers is directly or indirectly connected to the n-layer and p-layer sandwiching each layer applying a voltage for moving to the n-layers or p-layers a charge; a voltage switching unit switches ON/OFF of application of the voltage to the m quantum layers; and a photonic crystal portion disposed in the laminated body or adjacent to the laminated body, so that lights of m wavelengths resonate, the lights of the m wavelengths generated in the m quantum layers corresponding to transition energy between subbands in the quantum layer.

Abstract: A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.

Abstract: A machining center NC operation panel is provided which can serve as a personal authentication system capable of simply and reliably identifying operators and implementing appropriate operational restrictions. The operation panel is provided with an imaging device mounted on its front or on a manual pulse generator for at-hand operation connected to the operation panel.

Abstract: An automatic tool exchange system which allows a tool management mode to be arbitrarily selectable between a fixed address scheme and a memory random scheme in operation of the same machining center. The control unit for controlling the respective drive units of the tool exchanger and the magazine includes a storage unit for storing tool information containing a registered correspondence relationship between the tools and corresponding addresses of the stowage parts of the magazine, a modifying unit for modifying the tool information, and a tool exchange instruction unit for sequentially designating the tool to be used in each of the machining steps in accordance with the machining program, and driving the magazine to move the stowage part at the address corresponding to the designated tool to a predetermined position based on the tool information so that the tool is located at the exchange position at a predetermined timing.

Abstract: A case that houses a chain includes a first cover member fixed to a cylinder block and a cylinder head, and a second cover member arranged on the opposite side of the cylinder block and the cylinder head from the first cover member. In an intermediate part, which is a part of a confronting wall of the first cover member between the first flange and the second flange, a cover-side rib is provided, having a height so that a distal end of the cover-side rib is not in contact with the cylinder block.

Abstract: A thermal radiation light source includes a laminated body including m quantum layers laminated where m is an integer of 2 or more, including an n-layer and a p-layer sandwiching the quantum layers from both sides in the laminating direction, the n-layer made of an n-type semiconductor and the p-layer made of a p-type semiconductor; a voltage applying unit for the m quantum layers is directly or indirectly connected to the n-layer and p-layer sandwiching each layer applying a voltage for moving to the n-layers or p-layers a charge; a voltage switching unit switches ON/OFF of application of the voltage to the m quantum layers; and a photonic crystal portion disposed in the laminated body or adjacent to the laminated body, so that lights of m wavelengths resonate, the lights of the m wavelengths generated in the m quantum layers corresponding to transition energy between subbands in the quantum layer.

Abstract: A thermal emission source is provided that has a structure capable of suppressing deterioration of an optical assembly over time. The thermal emission source includes an optical assembly (1) having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor. The optical assembly (1) includes a coating structure (30) with a coating material that differs from the semiconductor of refractive portions (10) and through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted.

Abstract: A membrane electrode gas diffusion layer assembly for a fuel cell includes a membrane electrode assembly including an electrolyte membrane, an anode catalyst layer, and a cathode catalyst layer, an anode diffusion layer joined to the anode catalyst layer of the membrane electrode assembly, and a cathode diffusion layer joined to the cathode catalyst layer of the membrane electrode assembly, in which at least one of the anode diffusion layer and the cathode diffusion layer includes a microporous layer that makes contact with the membrane electrode assembly, the microporous layer contains a cerium compound, and at least one of the electrolyte membrane, the anode catalyst layer, and the cathode catalyst layer comprises cerium ions.

Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

Abstract: Provided is a method of treating radioactive liquid waste which reduces the amount of radioactive waste to be generated and is capable of removing a radioactive nuclide from radioactive liquid waste to the extent that the concentration thereof is less than or equal to the measurement lower limit using a simple apparatus configuration. A filtration device is connected to a colloid removal device by a connection pipe. An adsorption tower positioned at the highest stream of an adsorption device is connected to the colloid removal device by a connection pipe. The colloid removal device includes an electrostatic filter. Respective adsorption towers in the adsorption device are sequentially connected by a pipe. A discharge pipe is connected to the adsorption tower positioned at the lowest stream of the adsorption device. Radioactive liquid waste, containing particles having a particle diameter of 1 ?m or greater, negatively charged colloids, and a radioactive nuclide, is supplied to the filtration device.

Abstract: A case that houses a chain includes a first cover member fixed to a cylinder block and a cylinder head, and a second cover member arranged on the opposite side of the cylinder block and the cylinder head from the first cover member. In an intermediate part, which is a part of a confronting wall of the first cover member between the first flange and the second flange, a cover-side rib is provided, having a height so that a distal end of the cover-side rib is not in contact with the cylinder block.

Abstract: Granular crystalline silicotitanate (CST) is supplied from an adsorbent raw material supply apparatus into a caustic treatment apparatus. A sodium hydroxide solution of 1 Mol/L in a caustic agent supply apparatus is supplied into the caustic treatment apparatus with the granular CST supplied. After a predetermined quantity of the sodium hydroxide solution is supplied to the caustic treatment apparatus, the supply of the sodium hydroxide solution to the caustic treatment apparatus is stopped. The granular CST is left to stand for 0.5 hour in the state that it is immersed in the sodium hydroxide solution in the caustic treatment apparatus and is subjected to the caustic treatment. After that, the granular CST subjected to the caustic treatment is cleaned by cleaning water in a cleaning water supply apparatus. The respective adsorptive performances of cesium and strontium of the granular CST subjected to the caustic treatment are improved more.

Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

Abstract: Provided is a method of treating radioactive liquid waste which reduces the amount of radioactive waste to be generated and is capable of removing a radioactive nuclide from radioactive liquid waste to the extent that the concentration thereof is less than or equal to the measurement lower limit using a simple apparatus configuration. A filtration device is connected to a colloid removal device by a connection pipe. An adsorption tower positioned at the highest stream of an adsorption device is connected to the colloid removal device by a connection pipe. The colloid removal device includes an electrostatic filter. Respective adsorption towers in the adsorption device are sequentially connected by a pipe. A discharge pipe is connected to the adsorption tower positioned at the lowest stream of the adsorption device. Radioactive liquid waste, containing particles having a particle diameter of 1 ?m or greater, negatively charged colloids, and a radioactive nuclide, is supplied to the filtration device.

Abstract: A radioactive waste (zeolite to which Cs-137 was adsorbed) in a waste tank and a glass raw material (soda lime glass) in a glass raw material tank are supplied into a solidifying vessel. Graphite in a graphite tank is also supplied into the solidifying vessel. The solidifying vessel is filled with a mixture of the radioactive waste, glass raw material, and graphite and is then disposed in an adiabatic vessel. The radioactive waste and glass raw material in the adiabatic vessel are heated by thermal energy generated due to radiation emitted from Cs-137. The heat is transferred to the peripheral portion of the solidifying vessel through the graphite, raising the temperature of the peripheral portion. The glass raw material is melted and enters clearances among the radioactive waste, producing a vitrified radioactive waste. This radioactive waste solidification method can shorten a time taken to produce a vitrified radioactive waste.

Abstract: A thermal emission source that allows a wider range of material choices than those of conventional techniques, so that light having a desired peak wavelength can easily be obtained. A thermal emission source includes a thermo-optical converter composed of an optical structure in which a refractive index distribution is formed in a member made of an intrinsic semiconductor so as to resonate with light of a shorter wavelength than a wavelength corresponding to a bandgap of the intrinsic semiconductor. When heat is externally supplied to the thermo-optical converter, light having a spectrum in a band of shorter wavelengths than a cutoff wavelength is produced by interband absorption in the intrinsic semiconductor, and light of a resonant wavelength ?r in the wavelength band, the light causing resonance in the optical structure, is selectively intensified and emitted as thermal emission.

Abstract: A radioactive waste (zeolite to which Cs-137 was adsorbed) in a waste tank and a glass raw material (soda lime glass) in a glass raw material tank are supplied into a solidifying vessel. Graphite in a graphite tank is also supplied into the solidifying vessel. The solidifying vessel is filled with a mixture of the radioactive waste, glass raw material, and graphite and is then disposed in an adiabatic vessel. The radioactive waste and glass raw material in the adiabatic vessel are heated by thermal energy generated due to radiation emitted from Cs-137. The heat is transferred to the peripheral portion of the solidifying vessel through the graphite, raising the temperature of the peripheral portion. The glass raw material is melted and enters clearances among the radioactive waste, producing a vitrified radioactive waste. This radioactive waste solidification method can shorten a time taken to produce a vitrified radioactive waste.

Abstract: A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.