Abstract: A thermoelectric conversion device includes: a substrate having a first surface and a second surface that face each other in a thickness direction; at least one thermoelectric conversion element which is provided in a surface on a side of at least one of the first surface and the second surface; a heat transfer member disposed on the side of the substrate, on which the at least one thermoelectric conversion element is provided, with an interval from at least a part of the at least one thermoelectric conversion element; and at least one heat transfer portion configured to thermally connect the at least one thermoelectric conversion element and the heat transfer member, wherein an interspace between the substrate and the heat transfer member is sealed outside a perimeter of the at least one thermoelectric conversion element.

Abstract: A thermoelectric conversion device includes: a substrate that includes a first surface and a second surface facing each other in a thickness direction; thermoelectric conversion elements that are disposed on a side of the first surface of the substrate; and a plurality of heat transfer parts that are formed with spaces interposed therebetween in a first direction along an in-plane direction of the substrate, and that are configured to transfer heat from/to the thermoelectric conversion elements, wherein a low heat conduction part having a lower thermal conductivity than a thermal conductivity of the heat transfer parts is disposed between the heat transfer parts adjacent to each other in the first direction.

Abstract: There is provided a thermoelectric conversion device comprising a substrate including a first surface and a second surface which are opposite to each other in a thickness direction, at least one thermoelectric conversion film disposed on the first surface, and a first heat transfer part disposed on a second surface side. The substrate is joined to the first heat transfer part in a movable state with respect to the first heat transfer part.

Abstract: A thermoelectric conversion device includes: at least one thermoelectric conversion element which is provided on a specific plane, and a heat transfer part which is thermally connected to the at least one thermoelectric conversion element, wherein the heat transfer part includes a separation portion which is disposed with a gap between the heat transfer part and at least a portion of the at least one thermoelectric conversion element, and a heat transfer portion which protrudes toward a side facing the at least one thermoelectric conversion element in a state where a portion thereof on a side opposite to the side facing the at least one thermoelectric conversion element is recessed, and is thermally connected to the at least one thermoelectric conversion element via the heat transfer portion.

Abstract: A thermoelectric device includes a semiconductor stacked thermoelectric thin film including a first high-purity layer composed of SiGe as a main material and a composite carrier supply layer formed on the first high-purity layer. The composite carrier supply layer includes a second high-purity layer and third high-purity layer composed of Si as a main material, and a carrier supply layer held between the second and third high-purity layers and composed of SiGe as a main material. The carrier supply layer is a P-type carrier supply layer to which an additive of a group XIII element is added or a N-type carrier supply layer to which an additive of a group XV element is added.

Abstract: A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.

Abstract: A thermoelectric device includes a semiconductor stacked thermoelectric thin film including a first high-purity layer composed of SiGe as a main material and a composite carrier supply layer formed on the first high-purity layer. The composite carrier supply layer includes a second high-purity layer and third high-purity layer composed of Si as a main material, and a carrier supply layer held between the second and third high-purity layers and composed of SiGe as a main material. The carrier supply layer is a P-type carrier supply layer to which an additive of a group XIII element is added or a N-type carrier supply layer to which an additive of a group XV element is added.

Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: A spin high-frequency mixer includes a spin current generator generating a spin current upon input of a local oscillator signal, a TMR device which inputs a high-frequency signal and the spin current and generates a mixed signal, and an output device outputting the generated mixed signal from the TMR device.

Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t<J/(Hc·Ms).

Abstract: A spin high-frequency mixer includes a spin current generator generating a spin current upon input of a local oscillator signal, a TMR device which inputs a high-frequency signal and the spin current and generates a mixed signal, and an output device outputting the generated mixed signal from the TMR device.

Abstract: In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.

Abstract: A spin transistor 1 is a spin transistor 1 having a source S of a ferromagnetic material, a drain D of a ferromagnetic material, a semiconductor SM on which the source S and the drain D are disposed and which forms a Schottky contact with the source S, and a gate electrode GE disposed through a gate insulating layer GI on the semiconductor SM, wherein a tunnel barrier insulating layer TI constituting a tunnel barrier is interposed between the semiconductor SM and the drain D.

Abstract: In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t<J/(Hc·Ms).

Abstract: According to this spin injection method, since a spin transfer torque assisted by an external magnetic field acts, a magnetization direction can be changed with a small current, and since the magnetization direction of a magnetosensitive layer can be controlled by just reducing the external magnetic field strength in the magnetosensitive layer, the external magnetic field carrying out an initial assist, a precise current control is not required and therefore the magnetization direction of the magnetosensitive layer can be changed by flowing a small current by simple control.

Abstract: A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Abstract: In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.

Abstract: Provided is a magnetic reproducing apparatus capable of controlling a magnetic domain of a free layer, and obtaining a sufficient reproduction output even if the size of an MR device is reduced. The MR device is formed so as to have a laminate structure in which a semi-hard magnetic layer and a first ferromagnetic layer (free layer) are exchange-coupled to each other through a non-magnetic exchange coupling layer. Unlike an abutted junction structure using a hard magnetic layer, the distribution of a magnetic bias applied from the semi-hard magnetic layer to the first ferromagnetic layer becomes uniform, thereby the first ferromagnetic layer is brought into a single magnetic domain state. Moreover, the semi-hard magnetic layer has a moderate coercive force lying halfway between soft magnetism and hard magnetism, so the magnetization direction of the first ferromagnetic layer is not fixed.