Abstract: A monitoring method includes steps of (a) placing a substrate on a mounting stage of a processing chamber of a plasma processing apparatus; (b) supplying a pulsed wave of RF power with a predetermined duty ratio from an RF power supply connected to an antenna; and (c) monitoring a plasma state based on a converted value of a Vpp voltage of an output terminal of a matching unit arranged between the antenna and the RF power supply. The converted value of the Vpp voltage is obtained by converting the Vpp voltage of the output terminal voltage based on the duty ratio, the RF power, and correlation information indicating a correlation between the Vpp voltage and the RF power.

Abstract: With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a). (b) includes supplying a pulse wave of the high-frequency power to the antenna. The pulse wave repeats on and off.

Abstract: A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.

Abstract: A deposition method includes (a) forming a film including silicon (Si), oxygen (O), and nitrogen (N) on a substrate; and (b) supplying a plasma generating gas including Ar gas and exposing the substrate having the film formed thereon to a plasma generated from the plasma generating gas, wherein a concentration of the nitrogen in the film is adjusted by switching to including a nitriding gas in the plasma generating gas or switching to not including the nitriding gas in the plasma generating gas.

Abstract: A doped electrode may be manufactured by doping an active material included in an electrode with an alkali metal in a dope solution containing a first aprotic solvent and an alkali metal salt. The doped electrode may be cleaned with a cleaning solution containing a second aprotic solvent that has a boiling point lower than that of the first aprotic solvent. The cleaning solution may be controlled such that a content ratio of the first aprotic solvent in the cleaning solution is 8 vol % or lower.

Abstract: A method for dry cleaning a susceptor is performed after a substrate is removed from a processing chamber of a substrate processing apparatus. In the method, a cleaning gas for dry cleaning is supplied to a first region including a substrate receiving region in the susceptor. The cleaning gas is regionally supplied to a second region where the cleaning gas is difficult to reach when the cleaning gas is supplied to the first region.

Abstract: A deposition method includes a first process performed by repeating causing aminosilane gas to be adsorbed on a substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating a first reformed gas by plasma and supplying the first reformed gas to the first silicon oxide film, and a second process, performed after the first process, by repeating causing aminosilane gas to be adsorbed on the substrate; causing a second silicon oxide film to be stacked on the substrate by supplying oxidation gas; and performing a reforming process on the second silicon oxide film by supplying a plasma-activated second reformed gas. The first reformed gas has a smaller effect of oxidizing the substrate than the second reformed gas.

Abstract: It is estimated whether or not each of landmarks is an object to be noted for travel assist control by using an estimation line EL set in the reference frame. The estimation line EL is set to be substantially parallel to a borderline BL. The borderline BL is a line a line which separates a drivable area and an undrivable area of a vehicle. It is estimated that the landmark located on a center line CL side is the object to be noted for travel assist control. It is estimated that the landmark located on a borderline BL side is not the object to be noted for travel assist control.

Abstract: A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.

Abstract: A deposition method includes a first process performed by repeating causing aminosilane gas to be adsorbed on a substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating a first reformed gas by plasma and supplying the first reformed gas to the first silicon oxide film, and a second process, performed after the first process, by repeating causing aminosilane gas to be adsorbed on the substrate; causing a second silicon oxide film to be stacked on the substrate by supplying oxidation gas; and performing a reforming process on the second silicon oxide film by supplying a plasma-activated second reformed gas. The first reformed gas has a smaller effect of oxidizing the substrate than the second reformed gas.

Abstract: A technology is provided in which not only the information on the first preceding vehicle ILV but also the information on the preceding vehicle group LVG ahead of the first preceding vehicle ILV is applied to the travel assist control. Firstly, specification processing of a preceding vehicle LV on the own lane is executed (step S1). Subsequently, landmark information on the preceding vehicle LV is graded (step S2). Subsequently, a shielding ratio SR of the preceding vehicle LV belonging to the preceding vehicle group LVG is calculated for each preceding vehicle LV (step S3). Subsequently, determination processing is executed whether or not to apply the information on the preceding vehicle group LVG to travel assist control (step S4).

Abstract: A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.

Abstract: A target determination apparatus mounted in a vehicle includes a first relative speed acquisition device configured to acquire a relative speed of a target forward of the vehicle with respect to the vehicle as a first relative speed using a millimeter-wave radar, a second relative speed acquisition device configured to acquire a relative speed of the target with respect to the vehicle as a second relative speed using a lidar, and a determination device configured to, in a case where the difference between the first relative speed and the second relative speed exceeds a threshold, determine the target as an upper structure located above the height of the vehicle.

Abstract: A method for dry cleaning a susceptor is performed after a substrate is removed from a processing chamber of a substrate processing apparatus. In the method, a cleaning gas for dry cleaning is supplied to a first region including a substrate receiving region in the susceptor. The cleaning gas is regionally supplied to a second region where the cleaning gas is difficult to reach when the cleaning gas is supplied to the first region.

Abstract: An objective of the present invention is to provide low-molecular-weight compounds that can inhibit Src family kinases. The present invention relates to compounds represented by general formula (I) or pharmacologically acceptable salts thereof. In the formula, Ar1 is optionally substituted C6-10 arylene or 5- to 10-membered heteroarylene, and Ar2 is optionally substituted C6-10 aryl or 5- to 10-membered heteroaryl. R1 and R2 are defined as described in the specification.

Abstract: There is provided a film forming method including: a modification process of modifying an oxide film formed on a substrate using oxygen radicals generated by a plasma source in a predetermined plasma processing region defined within a processing chamber; and an ignition preparation process of turning an internal state of the predetermined plasma processing region into a state in which plasma is likely to be ignited after the oxide film is formed on the substrate.

Abstract: A technology is provided in which not only the information on the first preceding vehicle ILV but also the information on the preceding vehicle group LVG ahead of the first preceding vehicle ILV is applied to the travel assist control. Firstly, specification processing of a preceding vehicle LV on the own lane is executed (step S1). Subsequently, landmark information on the preceding vehicle LV is graded (step S2). Subsequently, a shielding ratio SR of the preceding vehicle LV belonging to the preceding vehicle group LVG is calculated for each preceding vehicle LV (step S3). Subsequently, determination processing is executed whether or not to apply the information on the preceding vehicle group LVG to travel assist control (step S4).

Abstract: It is estimated whether or not each of landmarks is an object to be noted for travel assist control by using an estimation line EL set in the reference frame. The estimation line EL is set to be substantially parallel to a borderline BL. The borderline BL is a line a line which separates a drivable area and an undrivable area of a vehicle. It is estimated that the landmark located on a center line CL side is the object to be noted for travel assist control. It is estimated that the landmark located on a borderline BL side is not the object to be noted for travel assist control.

Abstract: A target determination apparatus mounted in a vehicle includes a first relative speed acquisition device configured to acquire a relative speed of a target forward of the vehicle with respect to the vehicle as a first relative speed using a millimeter-wave radar, a second relative speed acquisition device configured to acquire a relative speed of the target with respect to the vehicle as a second relative speed using a lidar, and a determination device configured to, in a case where the difference between the first relative speed and the second relative speed exceeds a threshold, determine the target as an upper structure located above the height of the vehicle.

Abstract: An objective of the present invention is to provide low-molecular-weight compounds that can inhibit Src family kinases. The present invention relates to compounds represented by general formula (I) or pharmacologically acceptable salts thereof. In the formula, Ar1 is optionally substituted C6-10 arylene or 5- to 10-membered heteroarylene, and Ar2 is optionally substituted C6-10 aryl or 5- to 10-membered heteroaryl. R1 and R2 are defined as described in the specification.