Patents by Inventor Takashi Fujimura

Takashi Fujimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060043876
    Abstract: The present invention suppresses the generation of deterioration of degree of vacuum attributed to a chemical reaction between an insulation film and an adhesive agent for adhering a sealing frame. An insulation film formed between first electrodes and first electrode lead terminals and second electrodes and second electrode lead terminals on a back panel is formed except for a sealing region where the back panel and a face panel are sealed. In a second electrode lead terminal side of the sealing region, only an adhesive-agent layer which adheres the back panel and the sealing frame and the second electrode lead terminals are present between a sealing frame and a back substrate.
    Type: Application
    Filed: August 18, 2005
    Publication date: March 2, 2006
    Inventors: Yuuichi Kijima, Yoshiyuki Kaneko, Takashi Fujimura
  • Publication number: 20050258735
    Abstract: An object of the present invention is to achieve high resolution, lightening, and thinning of a display apparatus. The display apparatus includes an anode substrate, a planar cathode substrate forming an electron emitting chamber vacuously sealed between the cathode substrate and the anode substrate, electron sources formed on the cathode substrate, phosphors formed on the anode substrate, and a vacuum seal member forming a pressure balancing chamber on the back of the electron emitting chamber side of the cathode substrate. The vacuum seal member is placed covering the back of the electron emitting chamber side, and has a shell structure for receiving the atmospheric pressure.
    Type: Application
    Filed: May 19, 2005
    Publication date: November 24, 2005
    Inventors: Takeshi Terasaki, Atsushi Kazama, Makoto Kitano, Tatsuya Nagata, Takashi Fujimura
  • Publication number: 20050258736
    Abstract: To achieve high resolution, lightening, and thinning in a display apparatus, the display apparatus includes a thin display panel and a control unit. The display panel includes an anode substrate, a cathode substrate forming an electron emitting chamber vacuously sealed between itself and the anode substrate, phosphors formed on the anode substrate, and a pressure support formed on the back of the electron emitting chamber side of the cathode substrate. The pressure support includes a vacuum seal member forming a pressure supporting chamber vacuously sealed between itself and the cathode substrate independently of the electron emitting chamber, and a reinforcement member which is formed of a member having a gap, which is sandwiched between the vacuum seal member and cathode substrate in the pressure supporting member, and at least both end portions of which span a bonding area of the cathode substrate for the anode substrate.
    Type: Application
    Filed: May 20, 2005
    Publication date: November 24, 2005
    Inventors: Atsushi Kazama, Takeshi Terasaki, Makoto Kitano, Tatsuya Nagata, Takashi Fujimura
  • Publication number: 20050184700
    Abstract: A motor apparatus is constructed to compensate for a delay in operation of the motor apparatus, so that the efficiency is improved and noise is reduced over a broad motor rpm range by driving the motor at the optimum timing.
    Type: Application
    Filed: February 24, 2005
    Publication date: August 25, 2005
    Inventor: Takashi Fujimura
  • Publication number: 20050148119
    Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a flat panel display without increasing the number of heat treatment steps, and a thin film transistor and a flat panel display obtained by such methods are disclosed. A semiconductor region having an island shape is formed on an insulating substrate. A gate electrode is formed above the semiconductor region with a gate dielectric film being located therebetween. An impurity is implanted to the semiconductor region using the gate electrode as a mask, thereby forming source and drain regions in a self-aligned manner at both sides of a channel region. An interlayer dielectric film is formed on the gate electrode and the gate dielectric film. Thereafter, a step of activating the impurity and a step of burning the interlayer dielectric film are simultaneously performed in a single heat treatment step.
    Type: Application
    Filed: January 5, 2005
    Publication date: July 7, 2005
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Takashi Fujimura
  • Publication number: 20050122161
    Abstract: The present invention comprising an active filter having a first gm amplifier, a second gm amplifier equivalent to the first gm amplifier, a band gap power source which applies a constant voltage making use of a band gap voltage to an input of the second gm amplifier and a current-voltage conversion circuit which converts an output current of the second gm amplifier into a voltage, wherein operation currents of the first and second gm amplifiers are controlled depending on the output voltage of the current-voltage conversion circuit.
    Type: Application
    Filed: December 2, 2004
    Publication date: June 9, 2005
    Inventor: Takashi Fujimura
  • Publication number: 20040023446
    Abstract: A method of manufacturing a thin film transistor and a method of manufacturing a flat panel display without increasing the number of heat treatment steps, and a thin film transistor and a flat panel display obtained by such methods are disclosed. A semiconductor region having an island shape is formed on an insulating substrate. A gate electrode is formed above the semiconductor region with a gate dielectric film being located therebetween. An impurity is implanted to the semiconductor region using the gate electrode as a mask, thereby forming source and drain regions in a self-aligned manner at both sides of a channel region. An interlayer dielectric film is formed on the gate electrode and the gate dielectric film. Thereafter, a step of activating the impurity and a step of burning the interlayer dielectric film are simultaneously performed in a single heat treatment step.
    Type: Application
    Filed: July 28, 2003
    Publication date: February 5, 2004
    Applicant: Kabushiki Kaisha Toshiba
    Inventor: Takashi Fujimura
  • Patent number: 6663727
    Abstract: Disclosed is a steel alloy that includes as alloying ingredients carbon, silicon, manganese, aluminum, and oxygen. In accordance with this embodiment of the disclosed invention, carbon is present in an amount ranging from 0.40 to 0.77 wt. %; silicon is present in an amount ranging from 0.40 to 1.20 wt. %; manganese is present in an amount ranging from 0.40 to 1.20 wt. %, aluminum is present in an amount ranging from 0.003 to 0.060 wt. %; and oxygen is present in an amount ranging up to 0.0030 wt. %. Also disclosed is a railway wheel that comprises a hub, a rim, and a connecting plate. In accordance with this embodiment of the disclosed invention, at least the rim, and preferably the entire railway wheel, is composed of the disclosed steel composition.
    Type: Grant
    Filed: February 21, 2002
    Date of Patent: December 16, 2003
    Assignee: Sumitomo Metal Industries, Inc.
    Inventors: Takashi Fujimura, Taizo Makino
  • Patent number: 6486046
    Abstract: It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with a specific amount of oxygen, to change the amorphous semiconductor film into a polycrystalline semiconductor film, and a second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as major component with oxygen of an amount less than the specific amount.
    Type: Grant
    Filed: September 18, 2001
    Date of Patent: November 26, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takashi Fujimura, Shinichi Kawamura
  • Patent number: 6417854
    Abstract: The image processing system comprises means for preparing a plurality of textures for providing to at least one first texture thereof a background image, in which a movable object is either in a stationary or low-speed state and means for providing to at least one of the remaining second textures a background image of when a movable object is in a low-speed or faster state of travel and for mapping to a screen in accordance with the state of themovable object the second texture in addition to the first texture.
    Type: Grant
    Filed: November 20, 1998
    Date of Patent: July 9, 2002
    Assignee: Kabushiki Kaisha Sega Enterprises
    Inventors: Takashi Isowaki, Junichi Yamanaka, Hiroshi Masui, Takashi Fujimura, Takeshi Iwasaki, Naotake Nishimura, Makoto Osaki, Koki Koiwa, Saori Nishikawa
  • Publication number: 20020074065
    Abstract: Disclosed is a steel alloy that includes as alloying ingredients carbon, silicon, manganese, aluminum, and oxygen. In accordance with this embodiment of the disclosed invention, carbon is present in an amount ranging from 0.40 to 0.77 wt. %; silicon is present in an amount ranging from 0.40 to 1.20 wt. %; manganese is present in an amount ranging from 0.40 to 1.20 wt. %, aluminum is present in an amount ranging from 0.003 to 0.060 wt. %; and oxygen is present in an amount ranging up to 0.0030 wt. %. Also disclosed is a railway wheel that comprises a hub, a rim, and a connecting plate. In accordance with this embodiment of the disclosed invention, at least the rim, and preferably the entire railway wheel, is composed of the disclosed steel composition.
    Type: Application
    Filed: February 21, 2002
    Publication date: June 20, 2002
    Applicant: Sumitomo Metal Industries, Inc.
    Inventors: Takashi Fujimura, Taizo Makino
  • Patent number: 6372057
    Abstract: Disclosed is a steel alloy that includes as alloying ingredients carbon, silicon, manganese, aluminum, and oxygen. In accordance with this embodiment of the disclosed invention, carbon is present in an amount ranging from 0.40 to 0.77 wt. %; silicon is present in an amount ranging from 0.40 to 1.20 wt. %; manganese is present in an amount ranging from 0.40 to 1.20 wt. %, aluminum is present in an amount ranging from 0.003 to 0.060 wt. %; and oxygen is present in an amount ranging up to 0.0030 wt. %. Also disclosed is a railway wheel that comprises a hub, a rim, and a connecting plate. In accordance with this embodiment of the disclosed invention, at least the rim, and preferably the entire railway wheel, is composed of the disclosed steel composition.
    Type: Grant
    Filed: June 1, 2000
    Date of Patent: April 16, 2002
    Assignee: Sumitomo Metal Industries, Inc.
    Inventors: Takashi Fujimura, Taizo Makino
  • Publication number: 20020034845
    Abstract: It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with a specific amount of oxygen, to change the amorphous semiconductor film into a polycrystalline semiconductor film, and a second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as major component with oxygen of an amount less than the specific amount.
    Type: Application
    Filed: September 18, 2001
    Publication date: March 21, 2002
    Inventors: Takashi Fujimura, Shinichi Kawamura
  • Patent number: 6357297
    Abstract: A method for easily and effectively preventing shattered-rim fracture in a railway wheel. Generally, the method comprises the steps of providing a railway wheel, measuring the maximum defect size within the rim of the railway wheel, and determining whether the maximum defect size is less than a predetermined maximum permissible defect size, the maximum permissible defect size being determined based on an analysis of the likelihood of Mode II crack propagation from the defect when the railway wheel has been subjected to the load. The disclosed invention also encompasses a method for grading railway wheels for maximum load suitability.
    Type: Grant
    Filed: June 1, 2000
    Date of Patent: March 19, 2002
    Assignee: Sumitomo Metal Industries, Inc.
    Inventors: Taizo Makino, Takashi Fujimura
  • Patent number: 6278903
    Abstract: A robot body (21) is carried into the water chamber (2A) of a condenser (1) and disposed on a tube sheet (4) through which a number of narrow tubes (3) open. Inner nozzles (23) are inserted into narrow tubes (3) from working devices (24) installed on the front ends of four combined-use arms (22A through 22D) to position and fix the robot body (21). And the arm turning motors (25) and arm extending and contracting cylinder devices (26) of the combined-use arms (22A through 22D) are driven to move the robot body (21). Further, a cleaning brush (12) and a flaw detection probe (13) are inserted into a narrow tube (3) from each working device (24) and moved along the narrow tube (3) by cleaning water, whereby cleaning and inspection are performed. With three of the combined-use arms (22A through 22D) fixed to the narrow tubes (3), the inner nozzle (23) is extracted from the narrow tube (3) and the working device is moved to the next narrow tube (3).
    Type: Grant
    Filed: December 20, 1999
    Date of Patent: August 21, 2001
    Assignee: Hitachi Zosen Corporation
    Inventors: Hisashi Iwasaki, Shuji Komada, Hirotaka Takahashi, Minoru Hyuga, Takashi Fujimura
  • Patent number: 6194023
    Abstract: A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.
    Type: Grant
    Filed: September 25, 1998
    Date of Patent: February 27, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Mitsuhashi, Yuki Matsuura, Takashi Fujimura, Nobuo Imai, Yasumasa Goto
  • Patent number: 6149519
    Abstract: An electronic game device comprises a game implementing module (30) for implementing a game; a storing module (36) for storing game results for each player; a calculating module (34) for (i) reading out a game result of the player stored in the storing module, (ii) adding the game result achieved in the game to the game result read out from the storing module, and (iii) newly storing this sum value in the storing module; and a display module for displaying the newly stored game result (13). The game device may also comprise a characteristics value storing module for storing characteristics values relating to the output device for each of the identification symbols; a reading module for reading out characteristics values corresponding to an identification symbol input by a player from the characteristics value storing module; and setting module for setting the characteristics of the output device on the basis of the characteristics values thus read out.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: November 21, 2000
    Assignee: Kabushiki Kaisha Sega Enterprises
    Inventors: Makoto Osaki, Takashi Fujimura, Naotake Nishimura, Koki Koiwa, Ringo Manabe, Yukio Tsuji
  • Patent number: 6033001
    Abstract: A wheel for rolling stock in which when a deflection amount .lambda. of a disk relative to a rim section is set to not less than 5 mm, a condition that a deflection amount .delta. of the rim section relative a boss section .gtoreq.40 mm is secured easily, an excellent durability against cracking damage can be obtained.
    Type: Grant
    Filed: October 15, 1997
    Date of Patent: March 7, 2000
    Assignee: Sumitomo Metal Industries Limited
    Inventors: Takashi Fujimura, Yoshinori Okagata
  • Patent number: 5945937
    Abstract: An along-track interferometric SAR (Synthetic Aperture Radar) of the present invention includes a single SAR line and observes a target only once. SAR data derived from a single observation are subjected to look division in order to reproduce two SAR images deviated in time from each other. Interference processing is executed with the two SAR images in order to determine a phase difference. The phase difference is converted to the velocity of the target. This can be done without resorting to any additional hardware.
    Type: Grant
    Filed: November 17, 1997
    Date of Patent: August 31, 1999
    Assignee: NEC Corporation
    Inventor: Takashi Fujimura
  • Patent number: 5899516
    Abstract: A wheel has both wear resistance and heat-crack resistance sufficient for use in a high-speed railway vehicle. The chemical composition of a base steel comprises 0.4 to 0.75 % C, 0.4 to 0.95% Si, 0.6 to 1.2% Mn and less than 0.2% Cr. The wheel has a pearlitic microstructure in a region of at least 50 mm in depth from the tread surface of the wheel. When the tread of the wheel is quenched, a particular cooling process is applied in order to obtain the pearlitic structure.
    Type: Grant
    Filed: January 22, 1997
    Date of Patent: May 4, 1999
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Takashi Fujimura, Manao Anjiki, Taizo Makino, Yoshihiro Daitoh