Abstract: The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.

Abstract: A mirror with display device includes a transparent planar material; and a display device. The transparent planar material has a metallic thin film. A light-shielding part is formed in the transparent planar material so that the transparent planar material has a translucent part. A display part of the display device for displaying an image is bonded to the translucent part via an adhesive layer.

Abstract: A transmission line is provided with a line portion with a first relative permittivity which is composed of a first dielectric and a conductor filler dispersed in the first dielectric, and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the surrounding dielectric portion exists around the line portion in a cross section perpendicular to a direction in which electromagnetic waves transmit in the line portion, the first relative permittivity is 600 or more, and the second relative permittivity is smaller than the first relative permittivity. An electronic component has the transmission line. Further, an electronic component is provided with a resonator having a resonant frequency ranging from 1 GHz to 10 GHz, wherein, the resonator is formed by using the transmission line.

Abstract: A transmission line and an electronic component including a resonator using the transmission line are provided. The transmission line is capable of transmitting electromagnetic waves of at least one frequency ranging from 1 GHz to 10 GHz and is composed of a first dielectric with a first relative permittivity and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the first dielectric is represented by a formula of {XBaO.(1?X)SrO}TiO2 (0.25<X?0.55), and the second relative permittivity is smaller than the first relative permittivity.

Abstract: A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant.

Abstract: The present invention pertains to a group III-V compound semiconductor nanowire able to be used in a group III-V compound semiconductor MOSFET (FET) operational at a small subthreshold (100 mV/dec or less). A side face of the group III-V compound semiconductor nanowire is a (?110) plane constituted of a very small (111) plane. The group III-V compound semiconductor nanowire has, e.g., a first layer having a (111)A plane as a side face thereof, and a second layer having a (111)B plane as a side face thereof. The first layer and the second layer are stacked alternatingly in the axial direction.

Abstract: The present invention provides a skin cosmetic containing the following components (A), (B), (C), (D), (E), and (F): (A) 0.5 to 6 mass % of a linear saturated fatty acid having 12 to 22 of carbon atom, (B) 0.010 to 5 mass % of an organic base, (C) 0.010 to 1 mass % of an inorganic base, (D) 0.5 to 6 mass % of a linear saturated alcohol having 12 to 22 of carbon atom, (E) 0.05 to 9 mass % of a powder, and (F) water, wherein the component (D) comprises at least a linear saturated alcohol having 12 to 20 of carbon atom, and the mass ratio of the component (E) to the total amount of the components (A) and (D) [(A)+(D)] is (E)/[(A)+(D)]=from 0.01 to 5.

Abstract: A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant.

Abstract: A transmission line and an electronic component including a resonator using the transmission line are provided. The transmission line is capable of transmitting electromagnetic waves of at least one frequency ranging from 1 GHz to 10 GHz and is composed of a first dielectric with a first relative permittivity and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the first dielectric is represented by a formula of {XBa·(1-X)SrO}TiO2 (0.25<X?0.55), and the second relative permittivity is smaller than the first relative permittivity.

Abstract: A transmission line is provided with a line portion with a first relative permittivity which is composed of a first dielectric and a conductor filler dispersed in the first dielectric, and a surrounding dielectric portion composed of a second dielectric with a second relative permittivity, wherein, the surrounding dielectric portion exists around the line portion in a cross section perpendicular to a direction in which electromagnetic waves transmit in the line portion, the first relative permittivity is 600 or more, and the second relative permittivity is smaller than the first relative permittivity. An electronic component has the transmission line. Further, an electronic component is provided with a resonator having a resonant frequency ranging from 1 GHz to 10 GHz, wherein, the resonator is formed by using the transmission line.

Abstract: A cosmetic composition in the form of an O/W emulsion includes: (A) 1 to 20% by weight of a plate-like powder that has been surface-treated with an alkylalkoxysilane, (B) 0.1 to 10% by weight of an oil that is solid at a temperature of 25° C., (C) 0.3 to 50% by weight of an oil selected from the group consisting of a hydrocarbon oil, an ester oil, and an ether oil, each having a viscosity of 500,000 mPa·s or less at a temperature of 25° C., (D) 0.1 to 20% by weight of a nonionic surfactant having an HLB value of 8 or less, (E) 0.05 to 10% by weight of a water-soluble polymer having a hydrocarbon group with a carbon number of 8 to 30 and an anionic group in a molecule thereof, and (F) water.

Abstract: Disclosed is a light emitting element, which emits light with small power consumption and high luminance. The light emitting element has: a IV semiconductor substrate; two or more core multi-shell nanowires disposed on the IV semiconductor substrate; a first electrode connected to the IV semiconductor substrate; and a second electrode, which covers the side surfaces of the core multi-shell nanowires, and which is connected to the side surfaces of the core multi-shell nanowires. Each of the core multi-shell nanowires has: a center nanowire composed of a first conductivity type III-V compound semiconductor; a first barrier layer composed of the first conductivity type III-V compound semiconductor; a quantum well layer composed of a III-V compound semiconductor; a second barrier layer composed of a second conductivity type III-V compound semiconductor; and a capping layer composed of a second conductivity type III-V compound semiconductor.

Abstract: Disclosed is a semiconductor device (10) which comprises a glass substrate (12), a lower electrode layer (14), an n-type doped polycrystalline silicon semiconductor layer (16), a low-temperature insulating film (20) in which openings (22, 23) that serve as nuclei for growth of a nanowire (32) are formed, the nanowire (32) that is grown over the low-temperature insulating film (20) and has a core-shell structure, an insulating layer (50) that surrounds the nanowire (32), and an upper electrode layer (52). The nanowire (32) comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.

Abstract: A cosmetic composition in the form of a W/O emulsion includes: (A) 1 to 20% by weight of a plate-like powder which has been surface-treated with an alkylalkoxysilane; (B) 0.1 to 10% by weight of an oil that is solid at temperature of 25° C.; (C) 0.5 to 60% by weight of an oil selected from the group consisting of a hydrocarbon oil, an ester oil, and an ether oil, having a viscosity at 25° C. of 500,000 mPa·s or less; and (D) water, wherein a weight ratio of the component (B) to the component (A), (B)/(A), is 0.01 to 5.

Abstract: A medium conveyance apparatus includes: a medium supporting device having a medium supporting surface which supports a rear surface of a medium opposite to a processing object surface; a gripping device which grips a leading end portion of the medium; a fastening device which fastens at least a non-gripped portion of the medium; a conveyance device which conveys the medium held by at least one of the gripping device and the fastening device to a processing region where a processing is performed to the processing object surface; and a control device which controls the gripping device such that after the gripping device has gripped the leading end portion and before the leading end portion arrives at the processing region, at least a part of the gripping device is temporarily opened and then the part of the gripping device having been opened is closed to grip the leading end portion again.

Abstract: A recording medium lift detection apparatus for detecting a lift of a recording medium that is conveyed on a predetermined conveyance surface along a predetermined conveyance path, includes: a light projection/receiving, a light projection parallel flat plate, a light projection turning device, a control device and a recording medium lift detection control device.

Abstract: Provided is an emulsified cosmetic composition having an excellent UV-protective effect, an excellent transparent feeling, an excellent feeling upon application, and an excellent long-term stability. The emulsified cosmetic composition is characterized by containing a powder which is produced by subjecting a zinc oxide powder (A) having an average particle diameter of 0.1 to 1 ?m, an average particle thickness of 0.01 to 0.2 ?m, and an average aspect ratio of 3 or more to surface treatment with a silane or silazane compound having a C1-20 alkyl or fluoroalkyl group and having reactivity with an inorganic oxide.

Abstract: A tunnel field effect transistor is capable of operating at a low subthreshold and is able to be manufactured easily. The tunnel field effect transistor includes a group IV semiconductor substrate having a (111) surface and doped so as to have a first conductivity type, a group III-V compound semiconductor nanowire arranged on the (111) surface and containing a first region connected to the (111) surface and a second region doped so as to have a second conductivity type, a source electrode connected to the group IV semiconductor substrate; a drain electrode connected to the second region, and a gate electrode for applying an electric field to an interface between the (111) surface and the group III-V compound semiconductor nanowire, or an interface between the first region and the second region.

Abstract: An application apparatus includes: a medium conveying device which holds and conveys a medium in a predetermined conveyance direction; an application roller which applies a liquid to the medium held by the medium conveying device; an application roller rotating device which rotates the application roller at a predetermined rotational speed; a measuring roller which feeds a predetermined measured amount of the liquid to the application roller; a measuring roller rotating device which rotates the measuring roller at a predetermined rotational speed; a first moving device which causes relative movement between the application roller and the medium conveying device to change a distance between the application roller and the medium conveying device; a second moving device which causes relative movement between the application roller and the measuring roller to change a distance between the application roller and the measuring roller; and a movement controlling device which controls the second moving device in such

Abstract: Provided is an oil-in-water emulsified cosmetic composition having a high UV-protective effect and also having an excellent long-term stability and an excellent feeling upon application. The oil-in-water emulsified cosmetic composition is characterized by containing a zinc oxide powder (A) having an average particle diameter of 0.1 to 1 ?m, an average particle thickness of 0.01 to 0.2 ?m, and an average aspect ratio of 3 or more and a polymer (B) selected from the group consisting of a polyacrylamide compound, a polyacrylic acid, and salts thereof.