Abstract: A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.

Abstract: An object is to provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separation process region of a semiconductor film with an insulating resin. A photoelectric conversion device includes a first conductive layer formed over a substrate; first to third semiconductor layers formed over the first conductive layer; a second conductive layer formed over the third semiconductor layer; a first separation groove for separating the first conductive layer and the first to third semiconductor layers into a plurality of pieces; a second separation groove for separating the first to third semiconductor layers into a plurality of pieces; and a third separation groove for separating the second conductive layer into a plurality of pieces. An insulating resin is filled in a structural defect that exists in at least one of the first to third semiconductor layers, and in the first separation groove.

Abstract: A sheet film forming roll includes a center rotary shaft. Fixed end plates are disposed in two locations which are away from each other in an axial direction of the center rotary shaft, respectively. An external cylinder is made of a metal thin film. Two ends of the external cylinder are rotatably supported by the fixed end plates, respectively. Multiple rolling rubber rolls have ends which are rotatably supported by the respective fixed end plates. The rolling rubber rolls are in sliding contact with an outer peripheral surface of the center rotary shaft, and in sliding contact with an inner peripheral surface of the external cylinder. The rolling rubber rolls divide an annular space between the external cylinder and the center rotary shaft into multiple heating medium chambers arranged in a circumferential direction of the sheet film forming roll. A heating medium is configured to be filled in each of the multiple heating medium chambers.

Abstract: An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.

Abstract: A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown.

Abstract: A fluid flow rate control method is provided that uses a flow rate range variable type pressure type flow rate control device provided with at least two or more parallel fluid passages disposed between the downstream side of a control valve of the control device and a fluid supply pipe passage, and orifices having different fluid flow rate characteristics are respectively interposed in parallel fluid passages to pass fluid in a first flow rate region through one orifice for flow rate control, and to pass fluid in a second flow rate region through at least another orifice for flow rate control. Flow rate characteristics of the respective orifices are selected so that a maximum controllable flow rate of fluid in the first flow rate region at low flow rate is smaller than 10% of a maximum controllable flow rate in the second flow rate region at high flow rate.

Abstract: A converter pulse width shaping circuit (6) according to the present invention is provided between a waveform shaping apparatus (4) and an erroneous output preventing apparatus (5) that are provided between a flow rate detecting portion (1) and a flow rate metering mechanism (3). When high frequency pulse signals of a frequency not lower than a predetermined value are successively input, the converter pulse width shaping circuit (6) combines those high frequency pulse signals to convert them to a low frequency pulse signal, which is then output to the erroneous output preventing apparatus (5) having a low-cut function. In the present invention, a vortex flow meter is made up of a converter (2) including the converter pulse width shaping circuit (6) described above.

Abstract: An upstream cylinder (21) and a downstream cylinder (24) are fixedly mounted to a support member (19), and a filter cylinder (26) is provided mountably and dismountably between the cylinders (21) and (24). In consequence, only the filter cylinder (26) can be dismounted with the cylinders (21) and (24) left as they are on the support member (19), so that the maintenance operation of a particulate matter removing filter (28) can be performed easily. In addition, pressure conduits (32) and (33) and a pressure sensor (34) of a pressure detection unit (31) for detecting a clogged state of the particulate matter removing filter (28) are disposed at positions offset from a moving path (30) of the filter cylinder (26). In consequence, only the filter cylinder (26) can be easily mounted or dismounted without being obstructed by the pressure conduits (32) and (33) and the pressure sensor (34).

Abstract: A sheet or film-forming roll 10 includes an inner cylinder member 20 having axial parts 21, 22 provided on both sides thereof and rotatably supported by bearing parts 26, 27 through the axial parts 21, 22, a rubber roll 40 fitted to an outer circumferential surface of the inner cylinder member 20, eccentric side plates 53, 54 rotatably fitted to the axial parts 21, 22 of the inner cylinder member 20 respectively, and an elastic outer cylinder member 50 rotatably supported by the eccentric side plates 53, 54. The elastic outer cylinder member 50, which is provided with a thin-walled structure and made from metal, has an inner diameter larger than an outer diameter of the rubber roll 40 to accommodate the rubber roll 40 in an interior 68 thereof, and has inner circumferential surface 50A coming into contact with an outer circumferential surface 40A of the rubber roll 40.

Abstract: A sheet or film-forming roll 10 includes an inner cylinder member 20 having axial parts 21, 22 provided on both sides thereof and rotatably supported by bearing parts 26, 27 through the axial parts 21, 22, a rubber roll 40 fitted to an outer circumferential surface of the inner cylinder member 20, eccentric side plates 53, 54 rotatably fitted to the axial parts 21, 22 of the inner cylinder member 20 respectively, and an elastic outer cylinder member 50 rotatably supported by the eccentric side plates 53, 54. The elastic outer cylinder member 50, which is provided with a thin-walled structure and made from metal, has an inner diameter larger than an outer diameter of the rubber roll 40 to accommodate the rubber roll 40 in an interior 68 thereof, and has inner circumferential surface 50A coming into contact with an outer circumferential surface 40A of the rubber roll 40.

Abstract: The oxidation of a lower electrode by the reaction between a metal element in the lower electrode and oxygen in a bonding layer is suppressed. The contamination of a semiconductor layer that is a photoelectric conversion layer by the diffusion of the metal element in the lower electrode into the semiconductor layer is suppressed.

Abstract: A pressure type flow control device enabling a reduction in size and an installation cost by accurately controlling the flow of a fluid in a wide flow range. Specifically, the flow of the fluid flowing in an orifice (8) is calculated as Qc=KP1 (K is a proportionality factor) or Qc=KP2m(P1?P2)n (K is a proportionality factor and m and n are constants) by using a pressure P1 on the upstream side of the orifice and a pressure P2 on the downstream side of the orifice. A fluid passage between the downstream side of the control valve of the flow control device and a fluid feed pipe is formed of at least two or more fluid passages positioned parallel with each other. Orifices with different fluid flow characteristics are interposed in the fluid passages positioned parallel with each other. For the control of the fluid in a small flow area, the fluid in the small flow area is allowed to flow to one orifice.

Abstract: An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.

Abstract: A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown.

Abstract: Disclosed is a sheet film forming roll (10) including: a center rotary shaft (20); fixed end plates (28, 29) disposed in two locations which are away from each other in an axial direction of the center rotary shaft (20), respectively; an external cylinder (40) made of a metal thin film, two ends of the external cylinder being rotatably supported by the fixed end plates, respectively; and multiple rolling rubber rolls (70), two ends of each rolling rubber roll being rotatably supported by the respective fixed end plates, the rolling rubber rolls being in sliding contact with an outer peripheral surface of the center rotary shaft, and the rolling rubber rolls being in sliding contact with an inner peripheral surface of the external cylinder. The rolling rubber rolls divide an annular space between the external cylinder and the center rotary shaft into multiple heating medium chambers arranged in a circumferential direction of the sheet film forming roll.

Abstract: A sheet forming apparatus includes a first roll 3, a second roll 5 configured to sandwich molten resin extruded from a die in cooperation with the first roll 3, a coupling member 9 provided to be revolvable around a rotation center axis of the second roll 5, a third roll 7 provided rotatably on the coupling member 9 and configured to sandwich the resin conveyed along an outer periphery of the second roll 5 in cooperation with the second roll 5, and a coupling member supporter 13 configured to support the coupling member 9 at an intermediate part of the coupling member 9 so as to allow the coupling member 9 to revolve.

Abstract: Disclosed is a touch roll (211) including: a center rotary shaft (20); fixed end plates (28, 29) concentrically disposed in two places which are away from each other in an axial direction of the center rotary shaft; an external cylinder (40) made of a metal-made thin film and rotatably supported, at two ends thereof, by the respective fixed end plates, the external cylinder being concentric with the center rotary shaft; and multiple rolling rubber rolls (70) each rotatably supported, at two ends thereof, by the respective fixed end plates, the plurality of rolling rubber rolls being in sliding contact with an outer peripheral surface of the center rotary shaft, and being in sliding contact with an inner peripheral surface of the external cylinder.

Abstract: An orifice changeable pressure type flow rate control apparatus comprises a valve body of a control valve for a pressure type flow rate control apparatus installed between an inlet side fitting block provided with a coupling part of a fluid supply pipe and an outlet side fitting block provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body and the inlet side fitting block, and a fluid outlet side of the valve body and the outlet side fitting block are detachably and hermitically connected respectively so a flow passage for gases through the control valve is formed; and, a gasket type orifice for a pressure type flow rate control apparatus is removably inserted between a gasket type orifice insertion hole provided on the outlet side of the valve body and a gasket type orifice insertion hole of the outlet side fitting block.

Abstract: Problem to be Solved: A subject matter is to understandably make one drawing for a logical structure diagram and a physical structure diagram. Means to Solve the Problems: A physical connection between a router 10 and a switch 11 is expressed by drawing a connecting line A from circles (outer circles) indicative of the router 10 and the switch 11. By connecting between an outer circle and an intermediate circle/an inner circle with connecting lines, a logical connection between the router 10 and the switch 11, and one inside the switch 11, can be expressed.

Abstract: An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.