Patents by Inventor Takashi Hodota
Takashi Hodota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10644204Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.Type: GrantFiled: September 14, 2017Date of Patent: May 5, 2020Assignee: TOYODA GOSEI CO., LTD.Inventors: Yasuhiro Takenaka, Yoshiki Saito, Shinichi Matsui, Daisuke Shinoda, Takashi Hodota, Hironao Shinohara
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Publication number: 20180083166Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.Type: ApplicationFiled: September 14, 2017Publication date: March 22, 2018Inventors: Yasuhiro TAKENAKA, Yoshiki Saito, Shinichi Matsui, Daisuke Shinoda, Takashi Hodota, Hironao Shinohara
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Patent number: 9472718Abstract: A semiconductor light-emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated; a transparent conductive layer laminated on the p-type semiconductor layer of the laminated semiconductor layer and composed of a metal oxide having optical transparency to light emitted from the light-emitting layer; an insulating reflation layer laminated on the transparent conductive layer in which plural opening portions are provided to expose part of the transparent conductive layer; a metal reflection layer formed on the insulating reflection layer and inside the opening portions and composed of a metal containing aluminum; and a metal contact layer provided between the part of the transparent conductive layer exposed at the opening portion and the part of the metal reflection layer formed inside the opening portion, which contains an element selected from Group VIA and Group VIII of a periodic table.Type: GrantFiled: April 26, 2013Date of Patent: October 18, 2016Assignee: TOYODA GOSEI CO., LTD.Inventor: Takashi Hodota
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Patent number: 9373764Abstract: A semiconductor light emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; plural n-side electrodes that are laminated on the n-type semiconductor layer, electrically connected to the n-type semiconductor layer and arranged to surround at least a partial region of the light emitting layer and the p-type semiconductor layer as viewed from a lamination direction; and a p-side electrode that is provided on the p-type semiconductor layer, provided with a reflective property to light outputted from the light emitting layer and electrically connected to the p-type semiconductor layer, the p-side electrode including a connecting portion, which is used for electrical connection with an outside, at a region surrounded by the plural n-side electrodes as viewed from the lamination direction.Type: GrantFiled: December 17, 2013Date of Patent: June 21, 2016Assignee: TOYODA GOSEI CO., LTD.Inventor: Takashi Hodota
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Patent number: 9178116Abstract: A semiconductor light-emitting element (1) including: an n-type semiconductor layer (140); a light-emitting layer (150); a p-type semiconductor layer (160); a transparent conductive layer (170) laminated on the p-type semiconductor layer; a reflective film (180) which is composed of a material having optical transparency to light emitted from the light-emitting layer and an insulating property and is laminated on the transparent conductive layer; a p-conductive body (200) which penetrates the reflective film and is electrically connected to the transparent conductive layer; an n-electrode (310) electrically connected to the n-type semiconductor layer; and a p-electrode (300) having a p-adhesion layer (301) which is laminated on the reflective film, is electrically connected to the other end of the p-conductive body, and is composed of the same material as that for the transparent conductive layer and a p-metal reflective layer (302) which is laminated on the p-adhesion layer.Type: GrantFiled: June 24, 2011Date of Patent: November 3, 2015Assignee: TOYODA GOSEI CO. LTD.Inventor: Takashi Hodota
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Patent number: 9018657Abstract: A semiconductor light emitting element (1) including of a substrate (110) composed of sapphire; a laminated semiconductor layer (100) composed of an n-type semiconductor layer (140), a light emitting layer (150) and a p-type semiconductor layer (160) provided on the substrate (110); a first electrode (170) formed in the p-type semiconductor layer (160); and a second electrode (180) formed in the n-type semiconductor layer (140). Further, the first electrode (170) includes a first conductive layer (171) composed of an oxide transparent conductive material laminated on the p-type semiconductor layer (160); a reflection layer (172) which contains silver laminated on the first conductive layer (171); a second conductive layer (173) composed of an oxide conductive material laminated on the reflection layer (172); and a coating layer (174) provided so as to cover the first conductive layer (171), the reflection layer (172) and the second conductive layer (173).Type: GrantFiled: April 16, 2010Date of Patent: April 28, 2015Assignee: Toyoda Gosei Co., Ltd.Inventors: Takehiko Okabe, Kyosuke Masuya, Takashi Hodota
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Patent number: 8829555Abstract: A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.Type: GrantFiled: December 14, 2009Date of Patent: September 9, 2014Assignee: Toyoda Gosei Co., Ltd.Inventors: Koji Kamei, Remi Ohba, Takashi Hodota
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Publication number: 20140175489Abstract: A semiconductor light emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; plural n-side electrodes that are laminated on the n-type semiconductor layer, electrically connected to the n-type semiconductor layer and arranged to surround at least a partial region of the light emitting layer and the p-type semiconductor layer as viewed from a lamination direction; and a p-side electrode that is provided on the p-type semiconductor layer, provided with a reflective property to light outputted from the light emitting layer and electrically connected to the p-type semiconductor layer, the p-side electrode including a connecting portion, which is used for electrical connection with an outside, at a region surrounded by the plural n-side electrodes as viewed from the lamination direction.Type: ApplicationFiled: December 17, 2013Publication date: June 26, 2014Applicant: TOYODA GOSEI CO., LTD.Inventor: Takashi HODOTA
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Patent number: 8643046Abstract: Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined with the p-type semiconductor layer; and another electrode joined with the n-type semiconductor layer, wherein one or both of the one and other electrodes has a structure such that an ohmic contact layer, a metal reflection layer, a first anti-diffusion layer and a first adhesion layer are laminated in this order, and the first adhesion layer has an outer peripheral portion which extends so as to be in contact with the laminated semiconductor layer, so as to completely cover the first anti-diffusion layer.Type: GrantFiled: May 11, 2010Date of Patent: February 4, 2014Assignee: Toyoda Gosei Co., Ltd.Inventors: Takehiko Okabe, Kyosuke Masuya, Takashi Hodota
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Patent number: 8637888Abstract: Disclosed is a semiconductor light emitting element (1), which includes: an n-type semiconductor layer (140); a light emitting layer (150), which is laminated on one surface of the n-type semiconductor layer (140) such that a part of the surface is exposed, and which emits light when a current is carried therein; a p-type semiconductor layer (160) laminated on the light emitting layer (150); a multilayer reflection film (180), which is configured by alternately laminating low refractive index layers (180a) and high refractive index layers (180b) that have a refractive index higher than that of the low refractive index layers (180a) and also have transparency with respect to light emitted from the light emitting layer (150), and which is laminated on the exposed portion of the n-type semiconductor layer (140), the exposed portion being on one side of the n-type semiconductor layer; an n-conductor portion (400), which is formed by penetrating the multilayer reflection film (180), and which has one end thereof cType: GrantFiled: December 9, 2010Date of Patent: January 28, 2014Assignee: Toyoda Gosei Co., Ltd.Inventors: Takashi Hodota, Takehiko Okabe
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Patent number: 8592837Abstract: Disclosed is a semiconductor light emitting element (1) which includes: plural n-side columnar conductor portions (183), each of which is provided by penetrating a p-type semiconductor layer (160) and a light emitting layer (150), and is electrically connected to an n-type semiconductor layer (140); an n-side layer-like conductor portion (184), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the surface of the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the n-side columnar conductor portions (183); plural p-side columnar conductor portions (173), each of which is electrically connected to the p-type semiconductor layer (160); and a p-side layer-like conductor portion (174), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the p-side columnar conductorType: GrantFiled: December 2, 2010Date of Patent: November 26, 2013Assignee: Toyoda Gosei Co., Ltd.Inventors: Takashi Hodota, Takehiko Okabe
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Publication number: 20130285099Abstract: A semiconductor light-emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated; a transparent conductive layer laminated on the p-type semiconductor layer of the laminated semiconductor layer and composed of a metal oxide having optical transparency to light emitted from the light-emitting layer; an insulating reflation layer laminated on the transparent conductive layer in which plural opening portions are provided to expose part of the transparent conductive layer; a metal reflection layer formed on the insulating reflection layer and inside the opening portions and composed of a metal containing aluminum; and a metal contact layer provided between the part of the transparent conductive layer exposed at the opening portion and the part of the metal reflection layer formed inside the opening portion, which contains an element selected from Group VIA and Group VIII of a periodic table.Type: ApplicationFiled: April 26, 2013Publication date: October 31, 2013Applicant: TOYODA GOSEI CO., LTD.Inventor: Takashi HODOTA
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Patent number: 8492785Abstract: In a FC-mounted semiconductor light-emitting element, rise of a forward voltage is suppressed and light emission output is increased.Type: GrantFiled: February 8, 2012Date of Patent: July 23, 2013Assignee: Toyoda Gosei Co., Ltd.Inventor: Takashi Hodota
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Publication number: 20130069095Abstract: A semiconductor light-emitting element (1) including: an n-type semiconductor layer (140); a light-emitting layer (150); a p-type semiconductor layer (160); a transparent conductive layer (170) laminated on the p-type semiconductor layer; a reflective film (180) which is composed of a material having optical transparency to light emitted from the light-emitting layer and an insulating property and is laminated on the transparent conductive layer; a p-conductive body (200) which penetrates the reflective film and is electrically connected to the transparent conductive layer; an n-electrode (310) electrically connected to the n-type semiconductor layer; and a p-electrode (300) having a p-adhesion layer (301) which is laminated on the reflective film, is electrically connected to the other end of the p-conductive body, and is composed of the same material as that for the transparent conductive layer and a p-metal reflective layer (302) which is laminated on the p-adhesion layer.Type: ApplicationFiled: June 24, 2011Publication date: March 21, 2013Applicant: SHOWA DENKO K.K.Inventor: Takashi Hodota
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Publication number: 20120241721Abstract: Disclosed is a semiconductor light emitting element (1) which includes: plural n-side columnar conductor portions (183), each of which is provided by penetrating a p-type semiconductor layer (160) and a light emitting layer (150), and is electrically connected to an n-type semiconductor layer (140); an n-side layer-like conductor portion (184), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the surface of the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the n-side columnar conductor portions (183); plural p-side columnar conductor portions (173), each of which is electrically connected to the p-type semiconductor layer (160); and a p-side layer-like conductor portion (174), which is disposed on the rear surface side of the p-type semiconductor layer (160) to face the light emitting layer (150) when viewed from the light emitting layer (150), and is electrically connected to the p-side columnar conductorType: ApplicationFiled: December 2, 2010Publication date: September 27, 2012Inventors: Takashi Hodota, Takehiko Okabe
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Publication number: 20120235204Abstract: Disclosed is a semiconductor light emitting element (1), which includes: an n-type semiconductor layer (140); a light emitting layer (150), which is laminated on one surface of the n-type semiconductor layer (140) such that a part of the surface is exposed, and which emits light when a current is carried therein; a p-type semiconductor layer (160) laminated on the light emitting layer (150); a multilayer reflection film (180), which is configured by alternately laminating low refractive index layers (180a) and high refractive index layers (180b) that have a refractive index higher than that of the low refractive index layers (180a) and also have transparency with respect to light emitted from the light emitting layer (150), and which is laminated on the exposed portion of the n-type semiconductor layer (140), the exposed portion being on one side of the n-type semiconductor layer; an n-conductor portion (400), which is formed by penetrating the multilayer reflection film (180), and which has one end thereof cType: ApplicationFiled: December 9, 2010Publication date: September 20, 2012Applicant: SHOWA DENKO K.K.Inventors: Takashi Hodota, Takehiko Okabe
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Publication number: 20120199860Abstract: In a FC-mounted semiconductor light-emitting element, rise of a forward voltage is suppressed and light emission output is increased.Type: ApplicationFiled: February 8, 2012Publication date: August 9, 2012Applicant: SHOWA DENKO K.K.Inventor: Takashi HODOTA
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Publication number: 20120049232Abstract: Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined with the p-type semiconductor layer; and another electrode joined with the n-type semiconductor layer, wherein one or both of the one and other electrodes has a structure such that an ohmic contact layer, a metal reflection layer, a first anti-diffusion layer and a first adhesion layer are laminated in this order, and the first adhesion layer has an outer peripheral portion which extends so as to be in contact with the laminated semiconductor layer, so as to completely cover the first anti-diffusion layer.Type: ApplicationFiled: May 11, 2010Publication date: March 1, 2012Applicant: SHOWA DENKO K.K.Inventors: Takehiko Okabe, Kyosuke Masuya, Takashi Hodota
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Publication number: 20120012889Abstract: A semiconductor light emitting element (1) is comprised of a substrate (110) composed of sapphire; a laminated semiconductor layer (100) which is composed of an n-type semiconductor layer (140), a light emitting layer (150) and a p-type semiconductor layer (160), and is provided on the substrate (110); a first electrode (170) formed in the p-type semiconductor layer (160); and a second electrode (180) formed in the n-type semiconductor layer (140).Type: ApplicationFiled: April 16, 2010Publication date: January 19, 2012Applicant: SHOWA DENKO K.K.Inventors: Takehiko Okabe, Kyosuke Masuya, Takashi Hodota
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Patent number: 8097478Abstract: The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer onto a substrate, as well as forming a plurality of reflective p-type electrodes on top of the p-type semiconductor layer, a plating step of forming a seed layer that covers the reflective p-type electrodes and the p-type semiconductor layer, and fowling a plating layer on top of the seed layer, a removal step of removing the substrate from the n-type semiconductor layer, thereby exposing a light extraction surface of the n-type semiconductor layer, and an electrode formation step of performing dry etching of the light extraction surface of the n-type semiconductor layer using an etching gas containing the same element as a dopant element within the n-type semiconductor layer, and subsequently forming an n-type electrode on the light extraType: GrantFiled: June 26, 2008Date of Patent: January 17, 2012Assignee: Showa Denko K.K.Inventor: Takashi Hodota