Abstract: A liquid crystal device including a unipolar driving source; a pair of substrates, at least one of which is transparent; a chiral smectic liquid crystal layer interposed between the substrates; and an electrode arrangement provided in order to apply an electric field normal to the liquid crystal layer, wherein the opposed inner surfaces of the substrates contiguous to the chiral smectic liquid crystal layer are formed of different materials having different surface energies such that upon application of the unipolar voltage to the chiral smectic liquid crystal, the chiral smectic liquid crystal molecules will be placed in a first state and upon removal of the unipolar voltage, the liquid crystal molecules will be returned to a second state.

Abstract: An improved photoelectric conversion device is shown. The device includes a plurality of photoelectric semiconductor elements each of which are composed of a first electrode and a semiconductor layer and a second electrode. The opposed surfaces of semiconductor layer is completely covered by the first and second electrodes.

Abstract: An improved liquid crystal device which is driven by applying electric field thereon is shown. The liquid crystal is contained in the device as a layer which is separated into pixel and the optical condition of which is changed by the electric field applied. Contiguous to the liquid crystal layer, a ferroelectric film is provided to impart hysteresis to the device.

Abstract: An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Abstract: An improved liquid crystal device is shown. The device comprises a pair of substrates, a liquid crystal layer disposed inbetween and a pair of electrodes formed on the opposed insides of the substrate for applying an electric field on the liquid crystal layer. Further a dielectric film is formed on a inside of the substrate of the device. In response to an electric field applied to the liquid crystal layer, an electric charge is accumulated on the dielectric film to enable the device to exhibit apparent coersive electric field.

Abstract: A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.

Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.

Abstract: Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.

Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.

Abstract: An improved method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave. A semiconductor device is thereafter formed on the inside of the cave.

Abstract: A liquid crystal display of the chiral smectic type is caused to have grey scales, by applying a voltage of an intermediate level to the liquid crystal. Within each picture element of the display, there are a number of domains of the liquid crystal layer, some being transparent while the other being opaque rendering grey tone to the picture element.

Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.

Abstract: The liquid crystal display according to this invention comprises a liquid crystal cell having a pair of substrates with faced insides which are provided with electrodes, ferroelectric liquid crystal with a chiral smectic C phase in between said substrates and a polarizing plate on the light incidence side. One of said electrodes is a relfective electrode. The display is utilized with microcomputers, word processors, television or so on, and wherein, due to a small number of parts, the absorption loss of light is small and a reflective plate is prevented from being oxided and therefore degraded in reflection index, since it is not exposed to air.

Abstract: An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.

Abstract: An improved method for depositing material on substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.

Abstract: An improved liquid crystal filling device is shown. Prior to joining a substrate with another substrate between which the liquid crystal is to be charged, the liquid crystal is dropped on the substrate and then the other substrate is superimposed on the substrate under pressure. Sandwiched between the substrates, the liquid crystal spreads at high temperature.