Abstract: The present invention provides a cancer test method and a cancer test system for evaluating cancer in a subject. Specifically, the present invention provides a method for testing cancer in a subject, including: preparing a database that has stored a marker panel on which information of multiple cancer markers with respect to multiple healthy subjects and cancer patients is registered, the database including discrimination information that classifies a measured value of each cancer marker, into any of three groups: within the reference range, higher than the reference range, and lower than the reference range; analyzing, with respect to measured values of one or more cancer markers of the subject, and evaluating cancer in the subject on the basis of a result of the analysis.

Abstract: A compressor includes a compression mechanism that compresses refrigerant, and an electromotive mechanism that drives the compression mechanism. A shell accommodates the compression mechanism and the electromotive mechanism, with a reservoir inside the shell and that stores mixed liquid including liquid refrigerant and refrigerating machine oil. An electrode is provided inside the reservoir and faces an inner surface of the shell.

Abstract: A cancer screening device includes a cancer screening model generation unit configured to construct, as a cancer screening model, clinical data that is results of cancer screening for a plurality of subjects including cancer patients and healthy subjects, and metabolite exhaustive data that is a result of LC/MS analysis of first urine specimens collected from these subjects and is information related to amounts of a plurality of metabolites in the first urine specimens, a second acquisition unit configured to acquire sample data that is a result of LC/MS analysis of a second urine specimen collected from a second subject who is different from the first subjects, and a screening processing unit configured to estimate the cancer state of the second subject by applying an amount of metabolite in the sample data to the cancer screening model, and an output processing unit configured to output the estimated state of the cancer.

Abstract: A semiconductor device including an n-type semiconductor layer formed on a substrate, having a cell region and a gate pad region, and including silicon carbide, and a unit cell formed in the cell region is configured as follows. A p-type body region formed in the semiconductor layer of the gate pad region, a first insulating film formed on the p-type body region, a conductive film formed on the first insulating film, and a second insulating film formed on the conductive film, and a gate pad formed on the second insulating film. Then, the film thickness of the first insulating film is 0.7 ?m or more, and more favorably 1.5 ?m or more. In addition, the electric field strength of the first insulating film is 3 MV/cm or less. Then, an opening portion is formed on the first insulating film in the gate pad region, and a resistance portion and a connection portion corresponding to the conductive film are formed in the opening portion.

Abstract: A semiconductor device including an n-type semiconductor layer formed on a substrate, having a cell region and a gate pad region, and including silicon carbide, and a unit cell formed in the cell region is configured as follows. A p-type body region formed in the semiconductor layer of the gate pad region, a first insulating film formed on the p-type body region, a conductive film formed on the first insulating film, and a second insulating film formed on the conductive film, and a gate pad formed on the second insulating film. Then, the film thickness of the first insulating film is 0.7 ?m or more, and more favorably 1.5 ?m or more. In addition, the electric field strength of the first insulating film is 3 MV/cm or less. Then, an opening portion is formed on the first insulating film in the gate pad region, and a resistance portion and a connection portion corresponding to the conductive film are formed in the opening portion.

Abstract: A scroll compressor in which a winding angle of a first lap is larger than a winding angle of a second lap, a plurality of compression chambers are formed between the first lap and the second lap, the compression chambers include at least a first compression chamber and a second compression chamber that has a volume smaller than the first compression chamber, a first base plate is provided with a first injection port 16a for injection of refrigerant into the first compression chamber and a second injection port for injection of refrigerant into the second compression chamber, and an injection flow rate of the second injection port is higher than an injection flow rate of the first injection port.

Abstract: A compressor includes a compression mechanism configured to compress refrigerant, an electromotive mechanism configured to drive the compression mechanism, a shell accommodating the compression mechanism and the electromotive mechanism, a reservoir provided inside the shell and configured to store mixed liquid including liquid refrigerant and refrigerating machine oil, and an electrode provided inside the reservoir and facing an inner surface of the shell.

Abstract: Provided is a vertical MOSFET in which a conduction deterioration phenomenon is prevented during a current return operation and an on-voltage is low during the current return operation. A semiconductor device includes a hole barrier region that is provided between a second-conductivity-type body region and a first-conductivity-type epitaxial layer below a second-conductivity-type body contact region and functions as a potential barrier to a hole which flows from a source electrode to the first-conductivity-type epitaxial layer through the second-conductivity-type body contact region and the second-conductivity-type body region.

Abstract: A scroll compressor in which a winding angle of a first lap is larger than a winding angle of a second lap, a plurality of compression chambers are formed between the first lap and the second lap, the compression chambers include at least a first compression chamber and a second compression chamber that has a volume smaller than the first compression chamber, a first base plate is provided with a first injection port 16a for injection of refrigerant into the first compression chamber and a second injection port for injection of refrigerant into the second compression chamber, and an injection flow rate of the second injection port is higher than an injection flow rate of the first injection port.

Abstract: Provided is a vertical MOSFET in which a conduction deterioration phenomenon is prevented during a current return operation and an on-voltage is low during the current return operation. A semiconductor device includes a hole barrier region that is provided between a second-conductivity-type body region and a first-conductivity-type epitaxial layer below a second-conductivity-type body contact region and functions as a potential barrier to a hole which flows from a source electrode to the first-conductivity-type epitaxial layer through the second-conductivity-type body contact region and the second-conductivity-type body region.

Abstract: There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.

Abstract: The disclosed semiconductor recording device achieves multi-valued reading and writing using a spin-injection magnetization-reversal tunneling magnetoresistive element (TMR element). A first current that has at least the same value as that of the element requiring the highest current to reverse the magnetization thereof among a plurality of TMR elements is, in the direction that causes reversal to either a parallel state or an anti-parallel state, applied to a memory cell having the plurality of TMR elements, and then a second current which is in the reverse direction from the first current and of which only the value needed to reverse the magnetoresistance state of at least one TMR element excluding the element requiring the maximum current among the plurality of TMR elements is applied to each, and multi-valued writing is performed.

Abstract: A semiconductor device includes a nitride semiconductor stack having at least two hetero junction bodies where a first nitride semiconductor layer and a second nitride semiconductor layer having a band gap wider than that of the first nitride semiconductor layer are disposed, and includes a drain electrode and, a source electrode disposed to the nitride semiconductor stack, and gate electrodes at a position put between the drain electrode and the source electrode and disposed so as to oppose them respectively in which the drain electrode and the source electrode are disposed over the surface or on the lateral side of the nitride semiconductor stack, and the gate electrode has a first gate electrode disposed in the direction of the depth of the nitride semiconductor stack and a second gate electrode disposed in the direction of the depth of the nitride semiconductor at a depth different from the first gate electrode.

Abstract: In an SOI-MISFET that operates with low power consumption at a high speed, an element area is reduced. While a diffusion layer region of an N-conductivity type MISFET region of the SOI type MISFET and a diffusion layer region of a P-conductivity type MISFET region of the SOI type MISFET are formed as a common region, well diffusion layers that apply substrate potentials to the N-conductivity type MISFET region and the P-conductivity type MISFET region are separated from each other by an STI layer. The diffusion layer regions that are located in the N- and P-conductivity type MISFET regions) and serve as an output portion of a CMISFET are formed as a common region and directly connected by silicified metal so that the element area is reduced.

Abstract: In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.

Abstract: In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly.

Abstract: The disclosed semiconductor recording device achieves multi-valued reading and writing using a spin-injection magnetization-reversal tunneling magnetoresistive element (TMR element). A first current that has at least the same value as that of the element requiring the highest current to reverse the magnetization thereof among a plurality of TMR elements is, in the direction that causes reversal to either a parallel state or an anti-parallel state, applied to a memory cell having the plurality of TMR elements, and then a second current which is in the reverse direction from the first current and of which only the value needed to reverse the magnetoresistance state of at least one TMR element excluding the element requiring the maximum current among the plurality of TMR elements is applied to each, and multi-valued writing is performed.

Abstract: There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.

Abstract: Characteristics of a semiconductor device having a FINFET are improved. The FINFET has: a channel layer arranged in an arch shape on a semiconductor substrate and formed of monocrystalline silicon; a front gate electrode formed on a part of an outside of the channel layer through a front gate insulating film; and a back gate electrode formed so as to be buried inside the channel layer through a back gate insulating film. The back gate electrode arranged inside the arch shape is arranged so as to pass through the front gate electrode.

Abstract: In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.