Abstract: Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

Abstract: Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z??0.4x+24.6 is satisfied.

Abstract: In order to provide a highly reliable inspection device that prevents a loss in reliability of inspection that uses information from a position detector as a result of the influence of magnetic bodies or the like that are present in the environment, the inspection device is characterized by being provided with biological information measurement units (10, 12) that measure biological information of an inspected target and form an image containing said biological information, a magnetic position detector (50) that detects the position of at least one of the aforementioned biological information measurement units and the inspection target, and a control unit (14) that controls the aforementioned biological information measurement units and the aforementioned magnetic position detector (50); and is further characterized by the aforementioned control unit (14) being provided with an environmental magnetic field measurement unit (301) that uses the output of the aforementioned magnetic position detector (50) to mea

Abstract: Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

Abstract: An inkjet ink that prevents paper deformation such as curling, and also exhibits favorable pigment dispersibility. The inkjet ink includes at least a pigment, water, a water-soluble organic solvent having an ? value of not more than 65, and a dispersant, wherein the dispersant is a copolymer having a unit A represented by general formula (a) shown below and a unit B represented by general formula (b) shown below, and the mass ratio between the water-soluble organic solvent and the water satisfies (water-soluble organic solvent)/water=5/5 to 8/2. [In general formula (a), R1 represents a hydrogen atom or a lower alkyl group, and m represents an integer of 1 to 3.] [In general formula (b), R2 and R3 each represents a hydrogen atom or a lower alkyl group, wherein R2 and R3 may be the same or different, and n represents an integer of 1 to 250.

Abstract: An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer 23 grown on the absorption layer 23 contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer 21. In the group III-V compound semiconductor photo detector 11, the InP layer 23 contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer 23 generate holes, the silicon contained in the InP layer 23 compensates for the generated carriers. As a result, the second portion 23d of the InP layer 23 has sufficient n-type conductivity.

Abstract: Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

Abstract: A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure 3 having 50 or more pairs of group III-V compound semiconductor quantum wells. In the step of forming the multiple quantum well structure 3, the multiple quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources (all metal-organic source MOVPE).

Abstract: Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array 1 having a plurality of absorption regions 21, includes the steps of: growing an absorption layer 7 on an n-type InP substrate 3; growing an InP window layer on the absorption layer 7; and diffusing a p-type impurity in regions, in the window layer 11, corresponding to the plurality of absorption regions 21. The window layer 11 is grown by MOVPE using only metal-organic sources, at a growth temperature equal to or lower than that of the absorption layer 7.

Abstract: An inkjet ink that prevents paper deformation such as curling, and also exhibits favorable pigment dispersibility. The inkjet ink includes at least a pigment, water, a water-soluble organic solvent having an ? value of not more than 65, and a dispersant, wherein the dispersant is a copolymer having a unit A represented by general formula (a) shown below and a unit B represented by general formula (b) shown below, and the mass ratio between the water-soluble organic solvent and the water satisfies (water-soluble organic solvent)/water=5/5 to 8/2. [In general formula (a), R1 represents a hydrogen atom or a lower alkyl group, and m represents an integer of 1 to 3.] [In general formula (b), R2 and R3 each represents a hydrogen atom or a lower alkyl group, wherein R2 and R3 may be the same or different, and n represents an integer of 1 to 250.

Abstract: In a measuring probe, the distal ends of an irradiation optical fiber and a detection optical fiber on the subject side are held by a holder portion which is to be mounted on a subject. The optical fibers are led out from the side surface of the holder portion. Further, the optical fibers are bent in the holder portion so that the distal ends of the optical fibers are directed towards the subject when the holder portion is mounted on the subject.

Abstract: A measurement chair 7 is provided with a chair seat portion 8, a backrest portion 9, a pair of armrest portions 10, a pillow portion 11 provided at the upper portion of the backrest portion 9, a desk 12 provided on both armrest portions 10 and a jaw receiving portion which receives the jaw of the subject 1 and restricts a motion of the jaw. The pillow portion 11 receives the back head portion of the subject 1 and restricts a motion of the head of the subject 1. The desk 12 includes an inclined portion 12b arranged inclinedly with respect to a horizontal plane thereof. The jaw receiving portion 13 includes a telescope type column 13a of which base end portion is attached to a horizontal portion 12a of the desk 12 so as to permit free rotation in all directions and a contacting portion 13b which is provided at the top end portion of the column 13a for contacting the jaw.

Abstract: In a measuring probe, the distal ends of an irradiation optical fiber and a detection optical fiber on the subject side are held by a holder portion which is to be mounted on a subject. The optical fibers are led out from the side surface of the holder portion. Further, the optical fibers are bent in the holder portion so that the distal ends of the optical fibers are directed towards the subject when the holder portion is mounted on the subject.

Abstract: A method for growing a GaInNAs layer on a supporting base comprises the steps of supplying antimony to the surface of a supporting base, and growing a GaInNAs layer on the surface after supplying the antimony. The GaInNAs layer is grown after supplying the antimony. In the step of supplying the antimony, raw materials comprising Group V elements are simultaneously supplied in addition to the antimony. The Group V elements are at least either arsenic (As) or phosphorus (P). The GaInNAs layer is grown by any of the MOCVD method, MBE method, or epitaxial growth method.

Abstract: An apparatus for circulating a blowby gas to engine cylinders in an internal combustion engine, including a cylinder head cover including a first wall defining a first passage, and a first flange outwardly extending from the first wall, and a cylinder head including a second wall and a second flange cooperating with the first flange to form an abutting surface therebetween on which a second passage is arranged. The second passage is connected with the first passage and extending in a direction of a row of the engine cylinders. The second wall defines a plurality of third passages each having one end that is open to the second flange and communicated with the second passage and an opposite end open to an intake port of each of the engine cylinders.

Abstract: Provided is a method of heating a semiconductor substrate having a surface of a III-V compound semiconductor containing phosphorus as a group V constituent element. The method comprises the steps of: (a) providing an alloy in a heating furnace, the alloy including tin, indium, and phosphorus as main constituents; and (b) raising a temperature of the article in an atmosphere containing vapor of phosphorus supplied from the alloy.

Abstract: An apparatus for circulating a blowby gas to engine cylinders in an internal combustion engine, including a cylinder head cover including a first wall defining a first passage, and a first flange outwardly extending from the first wall, and a cylinder head including a second wall and a second flange cooperating with the first flange to form an abutting surface therebetween on which a second passage is arranged. The second passage is connected with the first passage and extending in a direction of a row of the engine cylinders. The second wall defines a plurality of third passages each having one end that is open to the second flange and communicated with the second passage and an opposite end open to an intake port of each of the engine cylinders.

Abstract: Provided is a method of heating a semiconductor substrate having a surface of a III-V compound semiconductor containing phosphorus as a group V constituent element. The method comprises the steps of: (a) providing an alloy in a heating furnace, the alloy including tin, indium, and phosphorus as main constituents; and (b) raising a temperature of the article in an atmosphere containing vapor of phosphorus supplied from the alloy.

Abstract: When input equipment is instructed by a remote control unit on the basis of a display of a monitor, a data signal is transmitted from a microcomputer of an AV amplifier to a microcomputer of a CD changer. When the signal is received by a microcomputer of the CD changer, display data is formed in the microcomputer of the CD changer on the basis of data in a memory and is outputted. In the AV amplifier, a switch is switched to the CD changer side. A cursor is formed by the microcomputer of the AV amplifer, the cursor and display data from the CD changer are synthesized by an image synthesizing circuit and displayed on the monitor. When an instruction is generated by the remote control unit on the basis of the display on the monitor, position coordinates of the cursor on the picture plane are generated from the microcomputer of the A/V amplifier to the microcomputer of the CD changer. On the basis of the display data and the position coordinates, the CD changer is controlled by its microcomputer.

Abstract: A developing replenisher material or a replenisher liquid developer to be supplied to a developer tank of an electrostatic copying machine comprises 1000 parts by weight of a carrier liquid composed mainly of aliphatic hydrocarbon and 200 or 1200 parts by weight of toner particles composed mainly of a binder resin and a pigment. The toner concentration of the replenisher liquid developer is high enough to prevent an overflow from the developer tank, allow many copies to be produced by the copying machine, and prevent a solvent shock. The toner particles, when added to the carrier liquid, can immediately and well be dispersed in the carrier liquid.