Abstract: A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.

Abstract: A semiconductor device and a method for manufacturing such semiconductor device are provided. Specifically, in the semiconductor manufacture, a recessed alignment mark is formed on a front plane of a high distortion point glass substrate as a target for alignment for bonding, and the recessed alignment mark is permitted to have a shape which extends to an external side of the semiconductor device. Thus, excellent bonding between the high distortion point glass substrate and the semiconductor device can be provided, and at the same time, since the recessed alignment mark is not sealed, the bonding state can be maintained even when the high distortion point glass substrate is exposed under the high temperature condition after bonding the semiconductor device.

Abstract: On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.

Abstract: A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si thin film. A single crystal Si substrate, having (a) an SiO2 film thereon and (b) a hydrogen ion implantation portion therein, is bonded to an area of the polycrystalline Si thin film that has been subjected to etching removal, and is subjected to a heating process. Then, the single crystal Si substrate is divided at the hydrogen ion implantation portion in an exfoliating manner, so as to form the single crystal Si thin film. As a result, it is possible to provide a large-size semiconductor device, having the single crystal Si thin film, whose property is stable, at a low cost.

Abstract: A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si thin film. A single crystal Si substrate, having (a) an SiO2 film thereon and (b) a hydrogen ion implantation portion therein, is bonded to an area of the polycrystalline Si thin film that has been subjected to etching removal, and is subjected to a heating process. Then, the single crystal Si substrate is divided at the hydrogen ion implantation portion in an exfoliating manner, so as to form the single crystal Si thin film. As a result, it is possible to provide a large-size semiconductor device, having the single crystal Si thin film, whose property is stable, at a low cost.

Abstract: A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si thin film. A single crystal Si substrate, having (a) an SiO2 film thereon and (b) a hydrogen ion implantation portion therein, is bonded to an area of the polycrystalline Si thin film that has been subjected to etching removal, and is subjected to a heating process. Then, the single crystal Si substrate is divided at the hydrogen ion implantation portion in an exfoliating manner, so as to form the single crystal Si thin film. As a result, it is possible to provide a large-size semiconductor device, having the single crystal Si thin film, whose property is stable, at a low cost.

Abstract: On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.

Abstract: A semiconductor device wherein a force of peeling a chip from a substrate does not operate even the semiconductor device is exposed under a high temperature condition after bonding and a bonding state of the substrate and the chip can be maintained, and a method for manufacturing such semiconductor device are provided. Specifically, in the semiconductor manufacture, a recessed alignment mark is formed on a front plane of a high distortion point glass substrate as a target for alignment for bonding, and the recessed alignment mark is permitted to have a shape which extends to an external side of the semiconductor device. Thus, excellent bonding between the high distortion point glass substrate and the semiconductor device can be provided, and at the same time, since the recessed alignment mark is not sealed, the bonding state can be maintained even when the high distortion point glass substrate is exposed under the high temperature condition after bonding the semiconductor device.

Abstract: A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.

Abstract: A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.

Abstract: A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad is for providing connection wiring through the insulator substrate. With this configuration it is possible to prevent an increase in an aspect ratio of a contact hole formed in an insulation layer in a region in which a transferred device is formed, the semiconductor device including a substrate on which the transferred device and a deposited device coexist.

Abstract: On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.

Abstract: A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer, and a second insulating layer, which has been deposited on the entire insulating surface of the substrate except an area in which the first insulating layer is present.

Abstract: An insulating substrate is bonded to a monocrystalline Si substrate that includes a monocrystalline Si thin film transistor and a hydrogen ion implanted portion. After depositing an amorphous Si thin film, the amorphous Si thin film is modified into a polycrystalline Si thin film by irradiation of the excimer laser. In laser irradiation, the irradiation of the laser beam on the monocrystalline Si thin film transistor is blocked either by inserting a mask in part of the optical path of the laser beam, or by irradiating the laser beam before unnecessary portions of the monocrystalline Si substrate is detached. In this way, the irradiation of the laser beam for forming the polycrystalline Si thin film will not damage the monocrystalline Si thin film transistor in a semiconductor device in which the monocrystalline Si thin film transistor, which has been transferred, and the polycrystalline Si thin film transistor, which has been formed on the insulating substrate, are formed on the insulating substrate.

Abstract: On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness.

Abstract: A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si thin film. A single crystal Si substrate, having (a) an SiO2 film thereon and (b) a hydrogen ion implantation portion therein, is bonded to an area of the polycrystalline Si thin film that has been subjected to etching removal, and is subjected to a heating process. Then, the single crystal Si substrate is divided at the hydrogen ion implantation portion in an exfoliating manner, so as to form the single crystal Si thin film. As a result, it is possible to provide a large-size semiconductor device, having the single crystal Si thin film, whose property is stable, at a low cost.

Abstract: A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si thin film. A single crystal Si substrate, having (a) an SiO2 film thereon and (b) a hydrogen ion implantation portion therein, is bonded to an area of the polycrystalline Si thin film that has been subjected to etching removal, and is subjected to a heating process. Then, the single crystal Si substrate is divided at the hydrogen ion implantation portion in an exfoliating manner, so as to form the single crystal Si thin film. As a result, it is possible to provide a large-size semiconductor device, having the single crystal Si thin film, whose property is stable, at a low cost.

Abstract: In a semiconductor device including an insulative substrate and a thin film device formed thereon, a thin film transistor having a non-single crystalline silicon thin film and a transistor having a single crystalline silicon thin film are intermixed, and a gate electrode film of the thin film transistor having single crystalline silicon is made of a material including a metal whose mass number is larger than that of silicon or a compound containing the metal.

Abstract: A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is provided between the insulating surface of the substrate and the single crystal semiconductor layer, and a second insulating layer, which has been deposited on the entire insulating surface of the substrate except an area in which the first insulating layer is present.

Abstract: A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad is for providing connection wiring through the insulator substrate. With this configuration it is possible to prevent an increase in an aspect ratio of a contact hole formed in an insulation layer in a region in which a transferred device is formed, the semiconductor device including a substrate on which the transferred device and a deposited device coexist.