Abstract: A surgical tool for positioning a surgical device includes a gripping portion; a rod protruding from the gripping portion; and a coupling system. The coupling system comprises an axial retention assembly comprising, at a free end of the rod, two opposite semispherical portions, wherein respective flat surfaces are separated from each other by an axial notch made partially along the rod, and a central clutch movable between a locking position and a disengagement position. In the locking position, the central clutch approaches the free end of the rod and is interposed between the two semispherical portions, preventing reciprocal approach thereof so as to block the two semispherical portions within a seat of said surgical device. In the disengagement position, the central clutch moves away from the free end such that the two semispherical portions can approach to allow the tool to come out of the surgical device.

Abstract: A surgical tool for positioning a surgical device including a gripping portion; a rod protruding from the gripping portion; and a coupling system. The coupling system comprises an axial retention assembly comprising, at a free end of the rod, two opposite semispherical portions, wherein the respective flat surfaces are separated from each other by an axial notch made partially along the rod, and a central clutch movable between a locking position and a disengagement position. In the locking position, the central clutch approaches the free end of the rod and is interposed between the two semispherical portions, preventing the reciprocal approach thereof so as to block the two semispherical portions within a seat of said surgical device. In the disengagement position, the central clutch moves away from the free end and the two semispherical portions can approach to allow the tool to come out of the surgical device.

Abstract: To provide an artificial bone having a porous structure with an improved affinity to osteogenic cells, an artificial bone (1) includes: a base material (2) containing porous ceramics provided with mutually interconnected multiple pores (6); a carbonaceous thin film (10) formed on an outer surface of the base material and wall surfaces (7) of the pores; and functional groups (13) including amino groups (12) provided on a surface and in an interior of the carbonaceous thin film.

Abstract: A method of manufacturing a sample for an atom probe analysis of the invention is made one going through a step of manufacturing a concave/convex structure in both of a base needle and a transplantation sample piece by an etching working of an FIB, a step of jointing mutual members, and a step of bonding such that the concave/convex structure becomes a mesh form by a deposition working of the FIB.

Abstract: A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.

Abstract: A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.

Abstract: A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metallic ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion.

Abstract: A composite focused ion beam device includes a first ion beam irradiation system 10 including a liquid metal ion source for generating a first ion, and a second ion beam irradiation system 20 including a gas field ion source for generating a second ion, and a beam diameter of the second ion beam 20A emitted from the second ion beam irradiation system 20 is less than that of the first ion beam 10A emitted from the first ion beam irradiation system 10.

Abstract: A preliminary processing technology for a sample locally cuts out a sample part of a device to be analyzed and processes it into a needle-like projection, and a technology of realizing SAP analysis on an atomic level by ensuring stabilized ion evaporation sequentially even in the case of a sample of multilayer structure including an element layer of small evaporation electric field. The preliminary processing method for a sample used on atom probe apparatus comprises a step for cutting the desired observing part of the sample into a block using an FIB equipment, a step for transferring the sample block onto a sample substrate and fixing the sample block in place, and a step for processing the sample block fixed onto the sample substrate into a needle-point shape by FIB etching. The sample processed into a needle-point shape is shaped such that the layer direction of the multilayer structure becomes parallel to the longitudinal direction of the needle.

Abstract: A working method of performing beam assist deposition or beam assist etching of a sample comprises irradiating a focused charged particle beam onto a region of the sample, and blowing a predetermined gas through a gas blowing nozzle toward the sample region while the focused charged particle beam passes through a passage in a side portion of the gas blowing nozzle and irradiates the sample region. The passage may be a slot provided in the side portion of the gas blowing nozzle such that the focused charged particle beam passes through an inside of the slot. The slot terminates at one end near a tip of the gas blowing nozzle, and the one end of the slot terminates at and opens into the interior of the gas blowing nozzle.

Abstract: In a method for fabricating a nanometer-scale structure by arranging nanotubes in a predetermined direction at a predetermined position, the method for fabricating a nanometer-scale structure comprises a first step of planarizing a substrate by etching a predetermined part by irradiating a focused energy beam to the sample, a second step of decomposing and depositing an organic gas into a columnar structure with an objective of determining the position and direction, and a third step of attaching and fixing the nanotube by using the thus deposited columnar structure as a standard of position and direction.

Abstract: A method of manufacturing a sample for an atom probe analysis of the invention is made one going through a step of manufacturing a concave/convex structure in both of a base needle and a transplantation sample piece by an etching working of an FIB, a step of jointing mutual members, and a step of bonding such that the concave/convex structure becomes a mesh form by a deposition working of the FIB.

Abstract: A method is adopted for deposition technology using a focused ion beam device, characterized by enabling structures to be formed by using phenanthrene as a source gas and using ions of gallium or gold, silicon or beryllium etc. of energies of 5 to 100 keV from a liquid-metal ion source as ions so as to give a gas blowing density of five to ten times greater than the case of deposition in the related art, with directionality of the gas blowing being both isotropic and symmetrical.

Abstract: There are provided a gas blowing nozzle adapted such that, by the fact that a groove-like notch structure has been provided in a side to which a beam IB comes flying in a nozzle tip part of a gas gun used on the occasion of a beam assist deposition or a beam assist etching, the beam IB can pass through an inside of the notch structure, and a charged particle beam apparatus having the gas blowing nozzle 11 as well as a working method.

Abstract: Problems to be solved by the present invention are to present a technique for preliminarily working a sample, which makes a place, that is desired to be analyzed, of a device into an acicular protrusion by locally cutting out the place, and to provide, even if the sample is a sample of a multilayer structure containing element layers whose evaporation electric fields are small in later-mentioned circumstances, a technique for making a stable ion evaporation in order possible, thereby making an SAP analysis at an atomic level possible. A preliminarily working of a sample for an atom probe apparatus of the invention comprises a step of cutting out a sample's desired observation site to a block-like form by using an FIB apparatus, a step of carrying and fixing the block-like cut-out sample onto a sample substrate, and a step of working the block-like sample fixed onto the sample substrate into a needle tip shape by an FIB etching.

Abstract: There are provided a gas blowing nozzle adapted such that, by the fact that a groove-like notch structure has been provided in a side to which a beam IB comes flying in a nozzle tip part of a gas gun used on the occasion of a beam assist deposition or a beam assist etching, the beam IB can pass through an inside of the notch structure, and a charged particle beam apparatus having the gas blowing nozzle 11 as well as a working method.

Abstract: A method of manufacturing a processing probe comprising a cantilever arranged in opposition to a sample, and a processing needle provided at a tip end of the cantilever to be able to contact with a surface of the sample in a state of being opposed to the sample, the processing needle being sharpened at a tip end thereof, the method comprising a selecting process of selecting a diamond small piece, which is sized to be conformed to a tip end dimension of the cantilever and has a projection, out of a plurality of diamond small pieces, a moving process of moving the selected diamond small piece onto a processing base after the selecting process, and a processing process of performing an etching processing in a manner to further sharpen the projection in an optional shape with focused beam after the moving process and mounting a base end side of the projection to the tip end of the cantilever with the use of the focused beam to fabricate a processing needle.

Abstract: There are provided a gas blowing nozzle adapted such that, by the fact that a groove-like notch structure has been provided in a side to which a beam IB comes flying in a nozzle tip part of a gas gun used on the occasion of a beam assist deposition or a beam assist etching, the beam IB can pass through an inside of the notch structure, and a charged particle beam apparatus having the gas blowing nozzle 11 as well as a working method.

Abstract: In a method for fabricating a nanometer-scale structure by arranging nanotubes in a predetermined direction at a predetermined position, the method for fabricating a nanometer-scale structure comprises a first step of planarizing a substrate by etching a predetermined part by irradiating a focused energy beam to the sample, a second step of decomposing and depositing an organic gas into a columnar structure with an objective of determining the position and direction, and a third step of attaching and fixing the nanotube by using the thus deposited columnar structure as a standard of position and direction.

Abstract: A technique of forming an elastic DLC structure having ultra high strength by controlling an amount of focused ion beam current from 0.1 to 10 pA, and a growth rate in the range from 0.6 to 5 ?m/min. and by using hydrocarbon gas such as phenanthrene (C14H10) and pyrene (C16H10), as source gas, in an apparatus having a gas nozzle for locally maintaining a higher partial gas pressure near the substrate and a structure for confining the gas on the substrate. In this manner, the elastic DLC having the ultra high strength can be obtained of which a hardness can be controlled in a relatively broader range.