Abstract: A light-emitting module includes: first and second light-emitting devices each including semiconductor laser elements that emit laser beams with an interval in a slow axis direction of the laser beams; a first optical unit that includes one or more first reflective members provided with reflective surfaces on which laser beams are incident and that makes the interval of the laser beams smaller and emits the laser beams; a second optical unit that includes second reflective members provided with reflective surfaces on which laser beams are incident and that reflects, two times or more, laser beams emitted with an interval in a fast axis direction and emits the laser beams with a smaller interval and with a smaller width in the fast axis direction of the laser beams; and a condenser lens that gathers laser beams having traveled through the first optical unit and the second optical unit.

Abstract: A light-emitting module includes: first and second light-emitting devices each including semiconductor laser elements that emit laser beams with an interval in a slow axis direction of the laser beams; a first optical unit that includes one or more first reflective members provided with reflective surfaces on which laser beams are incident and that makes the interval of the laser beams smaller and emits the laser beams; a second optical unit that includes second reflective members provided with reflective surfaces on which laser beams are incident and that reflects, two times or more, laser beams emitted with an interval in a fast axis direction and emits the laser beams with a smaller interval and with a smaller width in the fast axis direction of the laser beams; and a condenser lens that gathers laser beams having traveled through the first optical unit and the second optical unit.

Abstract: Disclosed is an Fe-based electroplated steel sheet including: a Si-containing cold-rolled steel sheet containing Si in an amount of 0.1 mass % or more and 3.0 mass % or less; and an Fe-based electroplating layer formed on at least one surface of the Si-containing cold-rolled steel sheet with a coating weight per surface of 5.0 g/m2 or more, in which in an intensity profile measured by glow discharge optical emission spectrometry, a peak of emission intensity at wavelengths indicating Si is detected within a range from a surface of the Fe-based electroplating layer to more than 0.2 ?m in a thickness direction and not more than a thickness of the Fe-based electroplating layer, and an average value of C concentration in a region ranging from 10 ?m to 20 ?m in the thickness direction from the surface of the Fe-based electroplating layer is 0.10 mass % or less.

Abstract: A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

Abstract: To provide a vehicle headlight whose irradiation light is capable of ensuring sufficient illuminance to the immediate front side of the vehicle. A vehicle headlight irradiating light to the front of a vehicle including a first unit which generates light in order to form a first low beam, a second unit which generates light in order to form a high beam and a second low beam, where a portion of the high beam on the lower end side overlaps a portion of the first low beam on the upper side, and the other portion is formed above the first low beam without overlapping the first low beam, and where a portion of the second low beam on the upper side overlaps a portion of the first low beam on the lower side, and the other portion is formed below the first low beam without overlapping the first low beam.

Abstract: To provide a vehicle headlight whose irradiation light is capable of ensuring sufficient illuminance to the immediate front side of the vehicle. A vehicle headlight irradiating light to the front of a vehicle including a first unit which generates light in order to form a first low beam, a second unit which generates light in order to form a high beam and a second low beam, where a portion of the high beam on the lower end side overlaps a portion of the first low beam on the upper side, and the other portion is formed above the first low beam without overlapping the first low beam, and where a portion of the second low beam on the upper side overlaps a portion of the first low beam on the lower side, and the other portion is formed below the first low beam without overlapping the first low beam.

Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.

Abstract: A semiconductor wafer includes a silicon carbide substrate having a first carrier concentration, a carrier concentration transition layer, and an epitaxial layer provided on the carrier concentration transition layer, the epitaxial layer having a second carrier concentration, and the second carrier concentration being lower than the first carrier concentration. The carrier concentration transition layer has a concentration gradient in the thickness direction. The carrier concentration decreases as the film thickness increases from an interface between a layer directly below the carrier concentration transition layer and the carrier concentration transition layer, and the carrier concentration decreases at a lower rate of decrease as the film thickness of the carrier concentration transition layer increases.

Abstract: A semiconductor wafer includes a silicon carbide substrate having a first carrier concentration, a carrier concentration transition layer, and an epitaxial layer provided on the carrier concentration transition layer, the epitaxial layer having a second carrier concentration, and the second carrier concentration being lower than the first carrier concentration. The carrier concentration transition layer has a concentration gradient in the thickness direction. The carrier concentration decreases as the film thickness increases from an interface between a layer directly below the carrier concentration transition layer and the carrier concentration transition layer, and the carrier concentration decreases at a lower rate of decrease as the film thickness of the carrier concentration transition layer increases.

Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.

Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.

Abstract: A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.

Abstract: The purposes of the present invention are to provide a paving material which is easy to be handled, has less restriction on the conditions of execution of work, decomposes fast, and is superior in durability, and a method for construction of paved body using the paving material. The purposes are attained by providing a paving material and a method for construction of paved body using the same, said paving material comprises at least binder emulsion for pavement, non-water soluble epoxy resin, and amine compound(s) a hardener thereof, and is prepared by mixing these three ingredients at the time of the execution of work, at the scene of the execution of work. The purposes are also attained by providing binder emulsion for pavement comprising an amine compound(s) that is a hardener of epoxy resin and the amine compound comprises at least polyaminoamido.

Abstract: Based on numerical values with respect to factors influencing shares of existing products and a new product evaluated by more than one people, a structured neural network calculates predictive shares of the new product predicted by the respective persons. Comprehensive evaluations on the respective products and the new product are calculated for each person, based on the numerical values with respect to the respective factors. Correlation coefficients between the comprehensive evaluations on the respective products by the respective persons and the actual shares are calculated. The predictive shares calculated by the structural neural network are layered out in accordance with the correlation coefficients for the respective person. Average values of the predictive shares and confidence intervals are calculated for the respective layers, and based on them and the calculation result obtained by the structured neural network, a share of the new product is predicted.

Abstract: Based on numerical values with respect to factors influencing shares of existing products and a new product evaluated by more than one people, a structured neural network calculates predictive shares of the new product predicted by the respective persons (S6). Comprehensive evaluations on the respective products and the new product are calculated for each person, based on the numerical values with respect to the respective factors (S10). Correlation coefficients between the comprehensive evaluations on the respective products by the respective persons and the actual shares are calculated (S12), and relationships between the are obtained (S12). Predictive shares of the new product are calculated for the respective persons based on the relationships and the comprehensive evaluations on the new product (S16). The predictive shares are layered out in accordance with the correlation coefficients for the respective persons (S18).

Abstract: In case a drive failure has occurred in a particular drive device when a designated storage medium is being transferred into or from the particular drive device or is being mounted in the particular drive device, drive failure recover processing is carried out in predetermined order which includes: a first step of performing an operation for physically moving the storage medium relative to the particular drive device to be recovered from the drive failure; a second step of performing a reboot operation on the particular drive device; a third step of performing a hard reset operation on the particular drive device; and a fourth step of performing an operation for turning of f and then again turning on power to the particular drive device. once the particular drive device has successfully recovered from the drive failure through any of the operations of the first to fourth steps, the drive-failure recovery processing is brought to an end without performing the operation of the remaining step.

Abstract: There are provided a cartridge transport mechanism that sequentially transports a media cartridge, capable of storing a plurality of storage media, to predetermined positions corresponding to a plurality of library units, and a control device that performs control for passing a predetermined number of the storage medium between the media storage section or drive device of each of the library units and the media cartridge sequentially transported to the predetermined position corresponding to the library unit. As the media cartridge is sequentially transported to the predetermined positions, the library units each receive or send the predetermined number of the storage medium from or to the media cartridge.

Abstract: In producing thin slabs by continuous casting, a method is developed in which internal defects are reduced to improve a production yield. Narrow sides of cast slabs are cooled in a controlled manner to produce cast slabs having a projection in a center of each of the narrow sides to a height of 5-10 mm above the level of the edge portions, and squeeze reduction with a reduction of 10-45% is carried out while an unsolidified portion of the narrow sides of the slab is within 50-80% of the thickness of the cast slab.

Abstract: An apparatus for manufacturing an optical fiber cable covered with a metal pipe forms a metal pipe by abutting two sides of a metal strip to be pulled, introduces an optical fiber or an optical fiber bundle into the metal pipe, and seals the opening of the metal pipe by laser welding. A squeeze shoe is arranged immediately before a welding position. The inner circumferential surface of the squeeze shoe is brought into contact with the metal pipe, and the section of this inner circumferential surface conforms to the outer circumferential surface of the metal pipe. The squeeze shoe is vertically divided into halves. Since the squeeze shoe is provided immediately before the welding position, the opening of the metal pipe can have a predetermined width and be welded. The opening width is adjusted in accordance with at least one of a diameter, thickness and composition of the metal strip and in accordance with at least one of a welding rate, laser beam power and laser beam focus shift amount of the laser welder.

Abstract: A method and apparatus for manufacturing a metal pipe-covered optical fiber cable perform extra length control of the metal pipe with respect to the optical fiber in accordance with length adjustment by reducing the diameter of the metal pipe while applying minimum tension or without applying any tension for extra length control to the optical fiber by means of a pair of rollers, so that a crack in the optical fiber is avoided and the service life of the optical fiber is prolonged.