Patents by Inventor Takashi Katsuno
Takashi Katsuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11927120Abstract: An exhaust gas sensor includes an element cover, a heater, a heater control section, and a cover state diagnosing section. The element cover accommodates a sensor element including a detection section and includes one or more gas flow holes. The heater heats the sensor element. The heater control section controls how the heater heats the sensor element. The cover state diagnosing section diagnoses a state of the element cover using heater information obtained when the heater is operated by the heater control section. The cover state diagnosing section includes a diagnosability determining section, which determines whether the state of the element cover is diagnosable based on an accuracy of the heater information obtained from an operating state of the heater and a surrounding environmental state of the element cover.Type: GrantFiled: April 22, 2021Date of Patent: March 12, 2024Assignee: DENSO CORPORATIONInventors: Takashi Araki, Masato Katsuno
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Patent number: 9779906Abstract: An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.Type: GrantFiled: October 2, 2015Date of Patent: October 3, 2017Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Tsuyoshi Ishikawa, Takashi Katsuno, Narumasa Soejima
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Publication number: 20170263864Abstract: An electronic device includes a substrate, a channel portion, a first electrode, a second electrode, and a shape change generation portion. The channel portion is provided above the substrate and includes a phase transition material that undergoes a phase transition between a metal phase and an insulator phase owing to shape change. The first electrode is provided above the channel portion and electrically connected to a part of an upper surface of the channel portion. The second electrode is provided above the channel portion and electrically connected to another part of the upper surface of the channel portion. The shape change generation portion is configured to force the channel portion to cause shape change.Type: ApplicationFiled: September 17, 2015Publication date: September 14, 2017Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Yumi SAITO, Takashi KATSUNO, Tsutomu UESUGI
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Publication number: 20170243712Abstract: An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.Type: ApplicationFiled: October 2, 2015Publication date: August 24, 2017Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Tsuyoshi ISHIKAWA, Takashi KATSUNO, Narumasa SOEJIMA
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Patent number: 8470672Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.Type: GrantFiled: August 30, 2011Date of Patent: June 25, 2013Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Takeshi Endo, Shinichiro Miyahara, Tomoo Morino, Masaki Konishi, Hirokazu Fujiwara, Jun Morimoto, Tsuyoshi Ishikawa, Takashi Katsuno, Yukihiko Watanabe
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Patent number: 8440524Abstract: A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer.Type: GrantFiled: February 18, 2011Date of Patent: May 14, 2013Assignees: Toyota Jidosha Kabushiki Kaisha, Denso CorporationInventors: Hirokazu Fujiwara, Masaki Konishi, Jun Kawai, Takeo Yamamoto, Takeshi Endo, Takashi Katsuno, Yukihiko Watanabe, Narumasa Soejima
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Patent number: 8436365Abstract: A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.Type: GrantFiled: February 21, 2011Date of Patent: May 7, 2013Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Takeo Yamamoto, Takeshi Endo, Jun Morimoto, Hirokazu Fujiwara, Yukihiko Watanabe, Takashi Katsuno, Tsuyoshi Ishikawa
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Patent number: 8324704Abstract: A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.Type: GrantFiled: March 23, 2010Date of Patent: December 4, 2012Assignees: DENSO CORPORATION, Toyota Jidosha Kabushiki KaishaInventors: Takeo Yamamoto, Takeshi Endo, Eiichi Okuno, Hirokazu Fujiwara, Masaki Konishi, Takashi Katsuno, Yukihiko Watanabe
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Patent number: 8168485Abstract: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.Type: GrantFiled: August 4, 2009Date of Patent: May 1, 2012Assignee: DENSO CORPORATIONInventors: Takeshi Endo, Eiichi Okuno, Takeo Yamamoto, Hirokazu Fujiwara, Masaki Konishi, Yukihiko Watanabe, Takashi Katsuno
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Patent number: 8163637Abstract: First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.Type: GrantFiled: December 22, 2010Date of Patent: April 24, 2012Assignees: Toyota Jidosha Kabushiki Kaisha, Denso CorporationInventors: Masaki Konishi, Hirokazu Fujiwara, Takeshi Endo, Takeo Yamamoto, Takashi Katsuno, Yukihiko Watanabe
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Publication number: 20120052642Abstract: A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.Type: ApplicationFiled: August 30, 2011Publication date: March 1, 2012Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Takeshi ENDO, Shinichiro MIYAHARA, Tomoo MORINO, Masaki KONISHI, Hirokazu FUJIWARA, Jun MORIMOTO, Tsuyoshi ISHIKAWA, Takashi KATSUNO, Yukihiko WATANABE
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Publication number: 20110207321Abstract: A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer.Type: ApplicationFiled: February 18, 2011Publication date: August 25, 2011Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Hirokazu FUJIWARA, Masaki KONISHI, Jun KAWAI, Takeo YAMAMOTO, Takeshi ENDO, Takashi KATSUNO, Yukihiko WATANABE, Narumasa SOEJIMA
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Publication number: 20110204383Abstract: A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.Type: ApplicationFiled: February 21, 2011Publication date: August 25, 2011Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takeo YAMAMOTO, Takeshi Endo, Jun Morimoto, Hirokazu Fujiwara, Yukihiko Watanabe, Takashi Katsuno, Tsuyoshi Ishikawa
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Publication number: 20110151654Abstract: First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second layer may be removed. Next, second conductive type ion impurities may be injected from upper sides of the first and second layers to the semiconductor layer after the removing step.Type: ApplicationFiled: December 22, 2010Publication date: June 23, 2011Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Masaki KONISHI, Hirokazu FUJIWARA, Takeshi ENDO, Takeo YAMAMOTO, Takashi KATSUNO, Yukihiko WATANABE
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Patent number: 7855131Abstract: A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.Type: GrantFiled: April 20, 2009Date of Patent: December 21, 2010Assignees: Toyota Jidosha Kabushiki Kaisha, Denso CorporationInventors: Hirokazu Fujiwara, Masaki Konishi, Takeo Yamamoto, Eiichi Okuno, Yukihiko Watanbe, Takashi Katsuno
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Publication number: 20100244049Abstract: A silicon carbide semiconductor device with a Schottky barrier diode includes a first conductivity type silicon carbide substrate, a first conductivity type silicon carbide drift layer on a first surface of the substrate, a Schottky electrode forming a Schottky contact with the drift layer, and an ohmic electrode on a second surface of the substrate. The Schottky electrode includes an oxide layer in direct contact with the drift layer. The oxide layer is made of an oxide of molybdenum, titanium, nickel, or an alloy of at least two of these elements.Type: ApplicationFiled: March 23, 2010Publication date: September 30, 2010Applicants: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Takeo Yamamoto, Takeshi Endo, Eiichi Okuno, Hirokazu Fujiwara, Masaki Konishi, Takashi Katsuno, Yukihiko Watanabe
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Publication number: 20100032730Abstract: A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially exposed to a top surface of the semiconductor substrate, forming a Schottky electrode of a first material in such a manner that the Schottky electrode is in Schottky contact with an n-type semiconductor region exposed to the top surface of the semiconductor substrate, and forming an ohmic electrode of a second material different from the first material in such a manner that the ohmic electrode is in ohmic contact with the exposed p-type semiconductor region. The Schottky electrode is formed earlier than the ohmic electrode.Type: ApplicationFiled: August 4, 2009Publication date: February 11, 2010Applicant: DENSO CORPORATIONInventors: Takeshi Endo, Eiichi Okuno, Takeo Yamamoto, Hirokazu Fujiwara, Masaki Konishi, Yukihiko Watanabe, Takashi Katsuno
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Publication number: 20090269908Abstract: A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.Type: ApplicationFiled: April 20, 2009Publication date: October 29, 2009Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATIONInventors: Hirokazu Fujiwara, Masaki Konishi, Takeo Yamamoto, Eiichi Okuno, Yukihiko Watanabe, Takashi Katsuno
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Publication number: 20090230405Abstract: A manufacturing method of a diode includes: forming a P type semiconductor film on a N type semiconductor layer with a crystal growth method; forming a first metallic film on the P type semiconductor film so that the first metallic film contacts the P type semiconductor film with an ohmic contact; forming a mask having an opening on the first metallic film; etching a part of the first metallic film and a part of the P type semiconductor film via the opening so that a part of the N type semiconductor layer is exposed; and forming a second metallic film on the part of the N type semiconductor layer so that the second metallic film contacts the N type semiconductor layer with a Schottky contact.Type: ApplicationFiled: March 13, 2009Publication date: September 17, 2009Applicant: DENSO CORPORATIONInventors: Takeo Yamamoto, Takeshi Endo, Masaki Konishi, Hirokazu Fujiwara, Yukihiko Watanabe, Takashi Katsuno, Masayasu Ishiko
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Publication number: 20090224353Abstract: A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face electrode) which adjoins a front face of the n type semiconductor region and a front face of the p type semiconductor region while at least forming a Schottky junction on a front face of the n type semiconductor region; and an insulating region which has a right-hand side (first side) and a left-hand side (second side) adjacent to the n type semiconductor region, the right-hand side facing a second n type semiconductor region which is located below the Schottky junction, the left-hand side facing a first n type semiconductor region which is located below a pn junction between the n type semiconductor region and the p type semiconductor region.Type: ApplicationFiled: March 5, 2009Publication date: September 10, 2009Applicant: DENSO CORPORATIONInventors: Takeo Yamamoto, Takeshi Endo, Yukihiko Watanabe, Takashi Katsuno, Masayasu Ishiko, Hirokazu Fujiwara, Masaki Konishi