Abstract: It is made possible to provide a MEMS device that has a low operation voltage, a large contact pressure force, and a large separation force. A MEMS device includes: a substrate; a supporting unit that is provided on the substrate; a fixed electrode that is provided on the substrate; an actuator that includes a first electrode, a first piezoelectric film formed on the first electrode, and a second electrode formed on the first piezoelectric film, one end of the actuator being fixed onto the substrate with the supporting unit, the actuator extending in a direction connecting the supporting unit and the fixed electrode, the first electrode being located to face the fixed electrode; and a stopper unit that is located above a straight line connecting the supporting unit and the fixed electrode, and is located on the substrate so as to face the first electrode.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A micro-electromechanical device includes a first piezoelectric actuator and a second piezoelectric actuator. The first piezoelectric actuator includes a first beam fixed on a substrate and a second beam extended in parallel to the first beam from a first connecting end to a first working end. A second piezoelectric actuator includes a third beam, spaced from the first beam, fixed on the substrate and a fourth beam extended in parallel to the third beam from a second connecting end to a second working end. The second working end faces the first working end in a perpendicular direction to a surface of the substrate.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A Micro-Electro-Mechanical System (MEMS) switch includes: a substrate; a fixed electrode provided on the substrate; and a beam fixed to the substrate and including a movable electrode disposed to face the fixed electrode. The beam is capable of being bent and displaced in a direction of the substrate to allow the movable electrode to directly contact with the fixed electrode. At least one of the fixed electrode and the movable electrode contains Au, and the other contains at least one metal selected from a group consisting of Ir, Rh, Os, Ru, Re and Te as a main component.

Abstract: It is made possible to provide a piezoelectric driven MEMS device having the distance between the action end and the fixed electrode which is kept constant regardless of whether the residual strain is large or small and having a mechanism which is excellent in reproducibility and reliability. Two piezoelectric driven actuators each having a folded beam structure are disposed in parallel and in a line-symmetric manner, and connected to each other in the vicinity of an action end.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A MEMS switch according to one aspect of the present invention comprises: a substrate; a fixing portion formed on the substrate; a movable beam including a lower electrode, a first insulation layer formed on the lower electrode, and an upper electrode formed on the first insulation layer, the movable beam having one end fixed by the fixing portion, the lower electrode and the first insulation layer having an opening going through both of the lower electrode and the first insulation layer; a fixed electrode formed on the substrate facing to a bottom surface of the other end of the movable beam, the fixed electrode facing to the opening; a contact electrode formed in the opening so as to project below the bottom surface of the movable beam and to be electrically connected to the upper electrode as well as to be insulated from the lower electrode; and a second insulation layer formed on the fixed electrode and having an opening facing to the contact electrode so as to insulate the lower electrode from the fixed

Abstract: A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.

Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

Abstract: A bulk acoustic wave device includes: a bulk acoustic wave element including a piezoelectric layer formed on a substrate, a lower electrode contacting a lower surface of the piezoelectric layer, and an upper electrode contacting an upper surface of the piezoelectric layer and partially overlapping the lower electrode, a lower hollow section being formed between the substrate and the lower surface of the piezoelectric layer, a first through-hole reaching the lower hollow section being formed through the bulk acoustic wave element in a direction perpendicular to a surface of the piezoelectric layer; an upper hollow section forming layer forming an upper hollow section with the upper surface of the piezoelectric layer, a second through-hole reaching the upper hollow section being formed therethrough in a direction perpendicular to a surface thereof; and a sealing layer covering the upper hollow section forming layer and filling up the second through-hole.

Abstract: A thin-film piezoelectric resonator has a piezoelectric film which is formed via a space on a substrate and is supported on the substrate at least one location, an upper electrode which has a plurality of electrode layers and a connection part connecting the electrode layers to each other, each of the electrode layers being formed on the piezoelectric film, having the same width and being arranged at the same interval as the width, a lower electrode formed under the piezoelectric film, a first pad which is formed on the substrate and is electrically connected to the upper electrode, and a second pad which is formed on the substrate and is electrically connected to the lower electrode.

Abstract: A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.

Abstract: The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

Abstract: A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

Abstract: A thin film piezoelectric resonator includes: a substrate having a cavity; a first dielectric layer provided on the substrate to cover the cavity; a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer; a first electrode provided on the first dielectric layer and above the cavity; a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and a second electrode provided on the piezoelectric layer and above the first electrode.

Abstract: A variable inductor element has a substrate, a first inductor element which is fixedly arranged on the substrate, a second inductor element which is supported by the substrate, is magnetically coupled with the first inductor element and variably control a mutual conductance with the first inductor element, and at least one piezoelectric actuator pair which torsionally drives the second inductor element.

Abstract: There is provided a bar material supply device of a simple configuration suited to machining of a bar material without increasing machining cost even when a short bar material such as an end material is machined.