Abstract: The present invention provides a contact probe pin in which a carbon film having both of conductivity and durability is formed on a base material with a tip divided, wherein Sn adherence can be reduced as much as possible to be able to maintain stable electrical contact over a long period of time, even under such circumstances that the temperature of a usage environment becomes high. The present invention relates to a contact probe pin, including a tip divided into 2 or more projections and repeatedly coming into contact with a test surface at the projection, wherein a carbon film containing a metal element is formed at least on a surface of the projection, and a radius of curvature at an apex part of the projection is 30 ?m or more.

Abstract: A contact probe includes a base material, a carbon film provided on a tip of the contact probe and configured to contact with an electrode, and an intermediate layer provided between the carbon film and the base material. The carbon film includes a metal element. A concentration of the metal element in the carbon film surface is lower than an average concentration of the metal element in a whole of the carbon film. The carbon film further includes: a plurality of layers, each of the plurality of layers having a uniform concentration of the metal element along a direction of a thickness of the carbon film; a layer in which the concentration of the metal element is continuously changed along a direction of a thickness of the carbon film; or both thereof.

Abstract: The present invention provides a contact probe pin in which a carbon film having both of conductivity and durability is formed on a base material with a tip divided, wherein Sn adherence can be reduced as much as possible to be able to maintain stable electrical contact over a long period of time, even under such circumstances that the temperature of a usage environment becomes high. The present invention relates to a contact probe pin, including a tip divided into 2 or more projections and repeatedly coming into contact with a test surface at the projection, wherein a carbon film containing a metal element is formed at least on a surface of the projection, and a radius of curvature at an apex part of the projection is 30 ?m or more.

Abstract: Provided are a contact probe that can realize low adhesion property to an adherend (particularly, Sn contained in the adherend) and secure stable contact resistance over a long period of time, and a connection device including the same. The present invention relates to a contact probe which repeatedly contacts with an electrode, wherein a carbon film including a metal element is formed on a surface of the contact probe which contacts with the electrode, and a concentration of the metal element in the carbon film surface is lower than an average concentration thereof in a whole of the carbon film.

Abstract: A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate. As a result, the adverse effect of high-energy particles and the like is suppressed to efficiently form a satisfactory thin film by an evaporation or sputtering process, which has less restriction to a source material gas, without the need for large equipment.

Abstract: When a thin film is formed on a substrate by means of a plasma under a pressure atmosphere close to the atmospheric pressure, it is possible to control particles to be formed by a reaction of a reaction gas and to form a uniform thin film constantly, even when the space between an electrode and the substrate is set to be wider than a conventional method. An electric power is supplied to a cylindrical rotating electrode 12 whose rotational axis is parallel to a substrate, to generate a plasma in a space between this rotating electrode 12 and the substrate S, and a supplied reaction gas G is activated by means of the generated plasma to form a thin film on the substrate S, is wherein a high-frequency electric power having a frequency of from 100 kHz to 1 MHz is supplied to the rotating electrode 12.

Abstract: An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).

Abstract: A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

Abstract: An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).

Abstract: A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

Abstract: A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.

Abstract: A rotor having a cylindrical peripheral surface is disposed in a treatment vessel into which a carrier gas is introduced, and the rotor peripheral surface is opposed to the surface of a substrate with a predetermine gap therebetween. The rotor peripheral surface is also opposed to a film-forming material supplying member having a film-forming material on its surface at a position apart from the position where the rotor faces the substrate. Film-forming particulates including atomic molecules of the film-forming material and cluster particulates thereof are scattered from the surface of the film-forming material supplying member by sputtering, and the rotor is rotated to form a carrier gas flow near the rotor peripheral surface. The film-forming particulates are transported to the vicinity of the surface of the substrate by the carrier gas flow and adhered to the surface of the substrate.

Abstract: The present invention provides a fine structure composite composed of a fine structure and a protection film formed thereon. The fine structure composite is used prior to a step of drying the fine structure in a high pressure chamber using a liquefied or a supercritical fluid, and the protection film is formed of a high viscosity material. When the fine structure such as a semiconductor substrate after development is dried using a liquefied or a supercritical fluid, the surface of the fine structure such as the substrate is prevented from being spontaneously dried, and as a result, a pattern on the surface is prevented from being collapsed.

Abstract: A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.

Abstract: The present invention provides a fine structure composite composed of a fine structure and a protection film formed thereon. The fine structure composite is used prior to a step of drying the fine structure in a high pressure chamber using a liquefied or a supercritical fluid, and the protection film is formed of a high viscosity material. When the fine structure such as a semiconductor substrate after development is dried using a liquefied or a supercritical fluid, the surface of the fine structure such as the substrate is prevented from being spontaneously dried, and as a result, a pattern on the surface is prevented from being collapsed.

Abstract: A method of inspecting an abnormality occurring inside a pipe to be inspected, and an apparatus for practicing the method, which includes the steps of transmitting an electric radio or radio frequency (RF) wave having a predetermined frequency from an antenna of a transmitter located at a predetermined position inside the pipe, receiving the transmitted RF wave by an antenna of a receiver located at a predetermined position inside the pipe, and discriminating a characteristic of the received RF wave. The characteristic of the received RF wave can be the intensity of the RF wave, and an attenuation amount is detected in a first example. Alternatively, the characteristic of the received RF wave may be the time required to reflect the transmitted RF wave and receive it with the receiver, and the time interval between transmission of the RF wave and reception of the reflected RF wave is measured in this alternative.

Abstract: A method of measuring the inner diameter of a pipe includes the steps of continuously transmitting RF waves of a predetermined frequency band from an antenna of a transmitter located inside of the pipe to be inspected, receiving the RF waves with an antenna of a receiver located inside the pipe, the antenna of the receiver being spaced apart from the antenna of the transmitter by a predetermined distance, detecting a frequency at a change point where an intensity of the received RF wave changes greatly, and substituting the frequency at the change point into a formula: d=c/1.706f (wherein d is the inner diameter of the pipe, c is the velocity of light, and f is the frequency at the change point) which shows the relation between the inner diameter of the pipe and the frequency to obtain a minimum inner diameter of the pipe.