Abstract: The invention provides a face position detection method and a face position detection apparatus which can perform detection of the face position of a substrate with high precision, even when a pattern having a large stepped portion is formed by means of a plurality of layers on the surface of the substrate, and an exposure method and an exposure apparatus. Measurement beams S1 to S9 are irradiated onto a plurality of places on the surface of a substrate (object) W using a beam irradiation system (irradiation system) 4, the plurality of measurement beams S1 to S9 from the surface of the substrate W are then detected using a beam reception system (detection system) 5, and face positional information for the surface of the substrate W is obtained based on the detection results for the plurality of measurement beams S1 to S9 using a signal processing unit 41.

Abstract: An exposure method for exposing the same location of the substrate a plurality of times through a mask formed with a pattern while changing the amounts of exposure with respect to a substrate by pulse light at a plurality of positions in the direction (Z-direction) in which the substrate being exposed is irradiated by the pulse light, wherein the energy of the pulse light is set so that the cumulative number of pulses at the position giving the maximum amount of exposure in the plurality of positions becomes at least the predetermined number of pulses.

Abstract: A mask pattern of one device row in which a plurality of device patterns are arranged in its longitudinal direction is placed on a mask. A wafer is stepped so that the mask pattern and a photosensitive substrate are moved relative to each other in a short-side direction perpendicular to the longitudinal direction, and the device row is successively transferred onto the photosensitive substrate. A plurality of device rows transferred onto the photosensitive substrate in this manner are arranged in the short-side direction.

Abstract: When a relatively thin substrate, such as a silicon wafer, is used in an exposure apparatus, a substrate adjuster is inserted between the thin substrate and the substrate holder in order to raise the position of the top surface of the thin wafer. The substrate adjuster is selected so that the sum of the thicknesses of the substrate adjuster and the thin substrate lies within the range of thicknesses of ordinarily used substrates. If a relatively thick substrate, for example, a ceramic substrate, is used, the substrate is directly held on the substrate holder without using the substrate adjuster. The substrate holder holds the substrate adjuster through vacuum adsorption, which also helps the substrate be adsorbed onto the substrate adjuster. In this manner, different substrates having different thicknesses can be used in the exposure apparatus without exchanging the substrate holder.

Abstract: Test reticle patterns (reticle pattern images) are transferred by exposure onto an unexposed wafer in a plurality of rows parallel to a predetermined direction, and a rotation angle of each reticle pattern image is obtained from an amount of positional displacement in the vertical direction (direction Y) (Steps 102 to 104). A rotation angle of each reticle pattern image is obtained from the bend of a moving mirror within an exposure range on a wafer stage which is obtained by correcting an amount of positional displacement in a horizontal direction (direction X) by the rotation angle obtained from the positional displacement in the vertical direction and the bend of the moving mirror assumed in a region outside the exposure range, and a residual rotation error between the thus obtained rotation angle and the actual rotation angle is obtained (Steps 105 to 107).

Abstract: A method of measuring a bent shape of a movable mirror of an exposure apparatus, which includes:a two-dimensionally movable stage;a movable mirror provided to the stage;a position measurement device for radiating a light beam onto the movable mirror, and measuring a position of the stage using the light beam reflected by the movable mirror;an illumination optical system for illuminating a mask; anda projection optical system for forming an image on the mask on a photosensitive substrate placed on the stage, includes:the first step of stepping the stage along array coordinates on the basis of a measured value of the position measurement device;the second/step of sequentially exposing first and second measurement marks on the photosensitive substrate, so that images of at least two first measurement marks and images of at least two second measurement marks substantially overlap each other, the mask having the first and second measurement marks;the third step of measuring differences between positions of the ima