Patents by Inventor Takashi Mochizuki
Takashi Mochizuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961704Abstract: There is provided a charged particle beam system having a computer system for controlling an acceleration voltage of a charged particle beam emitted from a charged particle source, the system including: a first diaphragm group having first and second diaphragms which are diaphragms that act on the charged particle beam and have different thicknesses; and a first diaphragm switching mechanism for switching the diaphragm in the first diaphragm group, in which the computer system controls the first diaphragm switching mechanism so as to switch from the first diaphragm to the second diaphragm according to an increase or decrease of the acceleration voltage.Type: GrantFiled: July 2, 2019Date of Patent: April 16, 2024Assignee: Hitachi High-Tech CorporationInventors: Naoki Akimoto, Takashi Doi, Yuzuru Mochizuki
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Publication number: 20240094852Abstract: Provided is a laminate where malfunction is not likely to occur for use as a touch panel sensor. The laminate includes: a substrate; a first wiring pattern portion that is disposed on one surface side of the substrate and consists of a plurality of first metal wires; and a second wiring pattern portion that is disposed on another surface side of the substrate and consists of a plurality of second metal wires, in which both of the first metal wires and the second metal wires include metal and carbon atoms, and in a case where an average resistivity of the first metal wires is represented by a resistivity R1 and an average resistivity of the second metal wires is represented by a resistivity R2, the resistivity R1 and the resistivity R2 are the same value or a ratio of a higher resistivity among the resistivity R1 and the resistivity R2 to a lower resistivity among the resistivity R1 and the resistivity R2 is more than 1.00 and 1.40 or less.Type: ApplicationFiled: August 17, 2023Publication date: March 21, 2024Applicant: FUJIFILM CorporationInventors: Takashi ARIDOMI, Hidehiro MOCHIZUKI
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Patent number: 11926744Abstract: An object is to provide a printing ink that has high environmental friendliness and is excellent in quick dry-curability of a coating when a plasma is used as a curing system. A solution is to provide an ink composition for plasma curing including a photocatalyst compound and/or a composite of a metal component and a photocatalyst compound and to provide an additive for an ink composition for plasma curing, the additive including a photocatalyst compound and/or a composite of a metal component and a photocatalyst compound.Type: GrantFiled: August 20, 2019Date of Patent: March 12, 2024Assignee: SAKATA INX CORPORATIONInventors: Takashi Ishizuka, Yasutsugu Mochizuki
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Patent number: 11774298Abstract: Multi-point thermocouples and assemblies are disclosed for ceramic heating structures. The disclosed embodiments provide multi-point connections in distinct areas to provide good temperature-sensing contacts between metal thermocouples and ceramic bodies while also providing improved flexibility. As such, cracking of ceramic bodies for heating structures is avoided. For one embodiment, assemblies including a multi-point thermocouple and a ceramic body are used in bake plates for processing systems that process microelectronic workpieces. The metal thermocouple has a flat surface used for connections to the ceramic body. Preferably, the thermocouple is relatively thin and provides improved connection sites and flexibility.Type: GrantFiled: February 12, 2020Date of Patent: October 3, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Melvin Verbaas, Kentaro Asakura, Takashi Mochizuki, Takahisa Mase, Nobutaka Yoshioka, Saki Matsuo
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Publication number: 20230249732Abstract: The present disclosure provides a walking type electric transporter capable of being continuously used for a long time while preventing breakage of a storage battery due to a collision of cargo. A storage battery is accommodated in a box-shaped battery casing, the battery casing is detachably attached to a transporter main body portion, and the battery casing holds the storage battery while having spaces in such a manner that an upper portion and a front portion in an interior and an upper surface and a front surface of the storage battery are respectively separated from each other.Type: ApplicationFiled: February 10, 2023Publication date: August 10, 2023Inventors: Yuya KATO, Takashi MOCHIZUKI, Koji SATO, Atsushi YOKOI, Akiko HATA, Keisuke MOMMA
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Publication number: 20230149019Abstract: Provided is a filling liquid (161) for filling a balloon (170) for a method for occluding a tubular organ, including a microcapsule (162) in which a balloon-dissolving substance that dissolves the balloon (170) is encapsulated, wherein the microcapsule is destroyable by an ultrasonic beam; and a liquid that is harmless in the tubular organ and does not dissolve the balloon. Further provided is a method for terminating a tubular organ occlusion including a step of applying an ultrasonic beam to a balloon (170) that is filled with the filling liquid (161) and occludes a tubular organ, thereby breaking the balloon (170) as a result.Type: ApplicationFiled: June 23, 2017Publication date: May 18, 2023Inventors: Toshio Chiba, Hiromasa Yamashita, Takashi Mochizuki, Kazuo Maruyama, Ryo Suzuki
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Publication number: 20220311021Abstract: In a resin frame equipped MEA, an electrolyte membrane has an outer peripheral overlapping portion that overlaps with an inner peripheral portion of a resin frame member. An ion flow blocking member is provided on the outer peripheral overlapping portion. The ion flow blocking member blocks the flow of iron ions, copper ions, or the like. The ion flow blocking member is formed in an annular shape, and surrounds an electrical power generating region of the MEA. The ion flow blocking member can be provided in the form of a physical barrier or a chemical barrier.Type: ApplicationFiled: February 27, 2022Publication date: September 29, 2022Inventors: Masaru ODA, Takaaki SHIKANO, Shohei TOYOTA, Tatsuro HARUKI, Takashi MOCHIZUKI
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Patent number: 11396704Abstract: A substrate holder according to one embodiment of the present disclosure comprises a stage made of a dielectric material and configured to support a substrate; an attraction electrode provided in the stage and configured to electrostatically attract the substrate; and a heater configured to heat the stage. By applying a DC voltage to the attraction electrode, the substrate is electrostatically attached to a surface of the stage by a Johnsen-Rahbek force. The stage comprises an annular close contact area with which the substrate comes into close contact at a position corresponding to an outer periphery of the substrate on the surface of the stage; and a groove provided in an annular shape in a portion outside the close contact area, and a conductive deposition film formed by the raw material gas is accumulated in the groove.Type: GrantFiled: November 27, 2019Date of Patent: July 26, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Toshiaki Fujisato, Takashi Mochizuki, Daisuke Toriya, Kouki Suzuki, Hwajun Noh
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Patent number: 11393911Abstract: A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.Type: GrantFiled: April 11, 2018Date of Patent: July 19, 2022Assignee: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.Inventors: Teppei Takahashi, Tetsuto Inoue, Akihiko Sugai, Takashi Mochizuki, Shunichi Nakamura
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Patent number: 11150142Abstract: There is provided a thermocouple-fixing jig for fixing a thermocouple to a linear heater, the thermocouple-fixing jig comprising a first member and a second member configured to hold the linear heater therebetween, wherein the second member comprises a first holding portion and a second holding portion that hold a temperature detection part of the thermocouple.Type: GrantFiled: April 1, 2019Date of Patent: October 19, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Hideaki Yamasaki, Takashi Mochizuki, Takeshi Itatani
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Publication number: 20210247240Abstract: Multi-point thermocouples and assemblies are disclosed for ceramic heating structures. The disclosed embodiments provide multi-point connections in distinct areas to provide good temperature-sensing contacts between metal thermocouples and ceramic bodies while also providing improved flexibility. As such, cracking of ceramic bodies for heating structures is avoided. For one embodiment, assemblies including a multi-point thermocouple and a ceramic body are used in bake plates for processing systems that process microelectronic workpieces. The metal thermocouple has a flat surface used for connections to the ceramic body. Preferably, the thermocouple is relatively thin and provides improved connection sites and flexibility.Type: ApplicationFiled: February 12, 2020Publication date: August 12, 2021Inventors: Melvin Verbaas, Kentaro Asakura, Takashi Mochizuki, Takahisa Mase, Nobutaka Yoshioka, Saki Matsuo
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Patent number: 11069512Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.Type: GrantFiled: August 8, 2017Date of Patent: July 20, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Shinya Okabe, Takashi Mochizuki, Hideaki Yamasaki, Nagayasu Hiramatsu, Kazuki Dempoh
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Patent number: 10998204Abstract: There is provided a method of processing a substrate by a substrate processing apparatus including a substrate mounting table having a refrigerant passage and a heater, and a chiller. The method includes adjusting a temperature of the substrate mounting table to a first temperature to process the substrate; and adjusting the temperature of the substrate mounting table to a second temperature higher than the first temperature to process the substrate. The temperature of the substrate mounting table becomes the second temperature by allowing the refrigerant at a first flow rate to flow from the chiller to the refrigerant passage and operating the heater. The temperature of the substrate mounting table becomes the first temperature by allowing the refrigerant at a second flow rate larger than the first flow rate to flow from the chiller to the refrigerant passage and operating the heater, or stopping an operation of the heater.Type: GrantFiled: May 15, 2019Date of Patent: May 4, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Mochizuki, Toshiaki Fujisato
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Publication number: 20210119008Abstract: A semiconductor device has: a semiconductor substrate; a drift layer of a first conductivity type; a well region of a second conductivity type; a high-concentration region of the second conductivity type, a source region of the first conductivity type; an insulating film provided on the drift layer; a first contact metal film in contact with the source region and the high-concentration region through a first opening provided in the insulating film; and a second contact metal film formed on a surface of the first contact metal film and contacting the high-concentration region through a second opening provided in the first contact metal film; a source electrode film formed on a surface of a contact metal layer including the first contact metal film and the second contact metal film. The first contact metal film includes titanium nitride, and the second contact metal film includes titanium.Type: ApplicationFiled: April 11, 2018Publication date: April 22, 2021Applicant: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.Inventors: Teppei TAKAHASHI, Tetsuto INOUE, Akihiko SUGAI, Takashi MOCHIZUKI, Shunichi NAKAMURA
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Publication number: 20210005493Abstract: When performing processing on a substrate in a plasma-free atmosphere, the substrate is reliably attracted to perform processing with high uniformity in the plane of the substrate. An apparatus includes a DC power source and a processing gas supply part. The DC power source has a positive electrode connected to one of an electrode of an electrostatic chuck and a conductive member, and a negative electrode connected to the other of the electrode and the conductive member, and attracts the substrate to a dielectric layer of the electrostatic chuck by electrostatic attraction force generated by applying voltage between the conductive member located at a processing position and the electrode in a state in which plasma is not formed inside a processing container. The processing gas supply part performs processing by supplying a processing gas to the substrate in a state in which the substrate is attracted to the dielectric layer.Type: ApplicationFiled: October 12, 2018Publication date: January 7, 2021Inventors: Toshiaki FUJISATO, Tadahiro ISHIZAKA, Takashi MOCHIZUKI, Daisuke TORIYA
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Publication number: 20200361270Abstract: This lift axle device comprises: a first air spring which corresponds to a first axle; a second air spring which corresponds to a second axle that reciprocates between a down position and lift position; an air bellows; a pneumatic circuit which has a solenoid valve; and a control circuit. The control circuit controls the supply of electric power to the solenoid valve. If the pressure transitions to less than a first pressure, the second axle is placed in the lift position. If the pressure transitions to at least a second pressure, the second axle is placed in the down position. If the pressure transitions to at least the first pressure and less than the second pressure, the second axle is caused to maintain the position thereof.Type: ApplicationFiled: August 21, 2018Publication date: November 19, 2020Inventors: Takashi MOCHIZUKI, Hiroyuki YOZA
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Publication number: 20200165723Abstract: A substrate holder according to one embodiment of the present disclosure comprises a stage made of a dielectric material and configured to support a substrate; an attraction electrode provided in the stage and configured to electrostatically attract the substrate; and a heater configured to heat the stage. By applying a DC voltage to the attraction electrode, the substrate is electrostatically attached to a surface of the stage by a Johnsen-Rahbek force. The stage comprises an annular close contact area with which the substrate comes into close contact at a position corresponding to an outer periphery of the substrate on the surface of the stage; and a groove provided in an annular shape in a portion outside the close contact area, and a conductive deposition film formed by the raw material gas is accumulated in the groove.Type: ApplicationFiled: November 27, 2019Publication date: May 28, 2020Inventors: Toshiaki FUJISATO, Takashi MOCHIZUKI, Daisuke TORIYA, Kouki SUZUKI, Hwajun NOH
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Publication number: 20190355597Abstract: There is provided a method of processing a substrate by a substrate processing apparatus including a substrate mounting table having a refrigerant passage and a heater, and a chiller. The method includes adjusting a temperature of the substrate mounting table to a first temperature to process the substrate; and adjusting the temperature of the substrate mounting table to a second temperature higher than the first temperature to process the substrate. The temperature of the substrate mounting table becomes the second temperature by allowing the refrigerant at a first flow rate to flow from the chiller to the refrigerant passage and operating the heater. The temperature of the substrate mounting table becomes the first temperature by allowing the refrigerant at a second flow rate larger than the first flow rate to flow from the chiller to the refrigerant passage and operating the heater, or stopping an operation of the heater.Type: ApplicationFiled: May 15, 2019Publication date: November 21, 2019Inventors: Takashi MOCHIZUKI, Toshiaki FUJISATO
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Patent number: 10471420Abstract: The present invention provides a cation exchange resin, and a cation exchange membrane and an electrolyte membrane for a fuel cell using the same. The cation exchange resin comprises a divalent hydrophobic unit; and a divalent hydrophilic unit having divalent hydrophilic groups which are repeated via carbon-carbon bond. The divalent hydrophilic groups being composed of one aromatic ring, or being composed of a plurality of aromatic rings which are bonded to each other via a divalent hydrocarbon group, a divalent silicon-containing group, a divalent nitrogen-containing group, a divalent phosphorus-containing group, a divalent oxygen-containing group, a divalent sulfur-containing group, or carbon-carbon bond, and at least one of the aromatic rings having a cation exchange group; wherein the hydrophobic unit and the hydrophilic unit are bonded to each other via carbon-carbon bond.Type: GrantFiled: June 29, 2016Date of Patent: November 12, 2019Assignees: UNIVERSITY OF YAMANASHI, TAKAHATA PRECISION CO., LTD.Inventors: Kenji Miyatake, Makoto Uchida, Jyunpei Miyake, Takashi Mochizuki, Hideaki Ono, Manai Shimada, Naoki Yokota, Natsumi Yoshimura
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Publication number: 20190301947Abstract: There is provided a thermocouple-fixing jig for fixing a thermocouple to a linear heater, the thermocouple-fixing jig comprising a first member and a second member configured to hold the linear heater therebetween, wherein the second member comprises a first holding portion and a second holding portion that hold a temperature detection part of the thermocouple.Type: ApplicationFiled: April 1, 2019Publication date: October 3, 2019Inventors: Hideaki YAMASAKI, Takashi MOCHIZUKI, Takeshi ITATANI