Abstract: A semiconductor device includes a substrate for transmitting light, a wiring layer provided on the substrate, a semiconductor chip formed on the wiring layer, a columnar electrode, a sealant, and an external connection terminal electrically connected to the semiconductor chip via the wiring layer and protruding electrode. The device includes a cut surface formed by dicing and constituted by only the substrate and the sealant. Since the cut surface has a single-layer structure as a result of forming the sealant in a single step, moisture cannot infiltrate through the sealant, hence a device resistant to corrosion and operational defects is provided.

Abstract: A semiconductor wafer has a substrate, and a plurality of active areas formed on the substrate. Integrated circuits are formed in the active areas. The semiconductor wafer also has dicing areas formed between the adjacent active areas. A seal ring is formed along the edge (periphery) of each active area. The semiconductor wafer also has interconnects formed closely to the inside of the seal ring. A protective layer covers the active areas. A protective film is formed on the protective layer at the locations of the active areas. The semiconductor wafer also has other interconnects formed on the protective film for electrical connection to the integrated circuits. Preferably, when the aspect ratio of a groove formed in the protective layer between the seal ring and the interconnect is 0.5 or more, this groove is covered with the protective film.

Abstract: A semiconductor wafer has a substrate, and a plurality of active areas formed on the substrate. Integrated circuits are formed in the active areas. The semiconductor wafer also has dicing areas formed between the adjacent active areas. A seal ring is formed along the edge (periphery) of each active area. The semiconductor wafer also has interconnects formed closely to the inside of the seal ring. A protective layer covers the active areas. A protective film is formed on the protective layer at the locations of the active areas. The semiconductor wafer also has another interconnects formed on the protective film for electrical connection to the integrated circuits. Preferably, when the aspect ratio of a groove formed in the protective layer between the seal ring and the interconnect is 0.5 or more, this groove is covered with the protective film.

Abstract: A semiconductor wafer has a substrate, and a plurality of active areas formed on the substrate. Integrated circuits are formed in the active areas. The semiconductor wafer also has dicing areas formed between the adjacent active areas. A seal ring is formed along the edge (periphery) of each active area. The semiconductor wafer also has interconnects formed closely to the inside of the seal ring. A protective layer covers the active areas. A protective film is formed on the protective layer at the locations of the active areas. The semiconductor wafer also has other interconnects formed on the protective film for electrical connection to the integrated circuits. Preferably, when the aspect ratio of a groove formed in the protective layer between the seal ring and the interconnect is 0.5 or more, this groove is covered with the protective film.

Abstract: A semiconductor chip includes a semiconductor substrate having an opening portion and a frame portion defining a periphery of the opening portion. At least one electric element is provided on the frame portion, and has at least one electrode terminal. A first insulation film is formed on the frame portion so that the electrode terminal is partially exposed at the first insulation film to form a plurality of electrode pads.

Abstract: A method of manufacturing a semiconductor device includes providing a first semiconductor chip having a plurality of pads, providing a second semiconductor chip having a plurality of pads, fixing the second semiconductor chip over a main surface of the first semiconductor chip, forming an insulating layer between the first semiconductor chip and the second semiconductor chip, forming a plurality of conductive posts over the main surface of the first semiconductor chip and a main surface of the second semiconductor chip, electrically connecting the plurality of conductive posts to the plurality of pads on the first semiconductor chip and the plurality of pads on the second semiconductor chip and covering the main surfaces of the first and second semiconductor chips with a resin, the resin partially covering the plurality of conductive posts.

Abstract: A semiconductor device includes a substrate for transmitting light, a wiring layer provided on the substrate, a semiconductor chip formed on the wiring layer, a columnar electrode, a sealant, and an external connection terminal electrically connected to the semiconductor chip via the wiring layer and protruding electrode. The device includes a cut surface formed by dicing and constituted by only the substrate and the sealant. Since the cut surface has a single-layer structure as a result of forming the sealant in a single step, moisture cannot infiltrate through the sealant, hence a device resistant to corrosion and operational defects is provided.

Abstract: The present invention provides a semiconductor device wherein a passivation film, an insulating film and an encapsulating layer are formed, in this order, on the surface of a semiconductor substrate, which is provided with a electrode pad thereon, and a leading end portion of a bump electrode supported by the insulating film and electrically connected to the electrode pad is exposed from the surface of the encapsulating layer. In the semiconductor device, a slit-shaped opening, which extends along a peripheral edge of the bottom of the bump electrode, is defined in the insulating film.

Abstract: A semiconductor device includes a passivity film, an insulating film and an encapsulating layer, all of which are formed, in this order, on the surface of a semiconductor substrate provided with a connecting pad, and a bump electrode electrically connected to the connecting pad via a wiring passing through a first opening defined in the passivation film and a second opening defined in the insulating film. The bump electrode has a leading end portion exposed from the surface of the encapsulating layer.

Abstract: A semiconductor wafer has a substrate, and a plurality of active areas formed on the substrate. Integrated circuits are formed in the active areas. The semiconductor wafer also has dicing areas formed between the adjacent active areas. A seal ring is formed along the edge (periphery) of each active area. The semiconductor water also has interconnects formed closely to the inside of the seal ring. A protective layer covers the active areas. A protective film is formed on the protective layer at the locations of the active areas. The semiconductor wafer also has another interconnects formed on the protective film for electrical connection to the integrated circuits. Preferably, when the aspect ratio of a groove formed in the protective layer between the seal ring and the interconnect is 0.5 or more, this groove is covered with the protective film.

Abstract: A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to forms a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.

Abstract: A semiconductor chip includes a semiconductor substrate having an opening portion and a frame portion defining a periphery of the opening portion. At least one electric element is provided on the frame portion, and has at least one electrode terminal. A first insulation film is formed on the frame portion so that the electrode terminal is partially exposed at the first insulation film to form a plurality of electrode pads.

Abstract: A semiconductor device which is manufactured through a process of forming a second structure on a first structure, by using a photolithography technique, the semiconductor device includes a mark which is provided at a part of the first structure to be covered by the second structure and which is necessary for forming the second structure.

Abstract: A semiconductor device includes a substrate for transmitting light, a wiring layer provided on the substrate, a semiconductor chip formed on the wiring layer, a columnar electrode, a sealant, and an external connection terminal electrically connected to the semiconductor chip via the wiring layer and protruding electrode. The device includes a cut surface formed by dicing and constituted by only the substrate and the sealant. Since the cut surface has a single-layer structure as a result of forming the sealant in a single step, moisture cannot infiltrate through the sealant, hence a device resistant to corrosion and operational defects is provided.

Abstract: A semiconductor apparatus having a semiconductor substrate including an integrated circuit and an insulative base member formed on a main surface thereof. A conductive layer is formed on the main surface of the semiconductor substrate as coupled to the integrated circuit and includes an external portion that extends onto top surface of the base member. A sealing member is formed on the main surface of the semiconductor substrate, the conductive layer and side surfaces of the base member, whereby the extended portion of the conductive layer is exposed from the sealing member.

Abstract: A method for dividing a semiconductor wafer which is covered by an opaque resin in a dicing process includes forming marks on the semiconductor wafer, wherein the marks are distinguished from electrodes which are formed on the semiconductor wafer. According to the method, in a dicing process, separating semiconductor chips from the semiconductor wafer can be precisely achieved.

Abstract: A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to forms a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.

Abstract: In one embodiment of the invention, a plurality of posts (terminals) stands on a main surface of a semiconductor substrate. A first metal electrode is formed on a side face of each post before providing a sealing layer over the main surface of the semiconductor substrate. The first metal electrode constitutes a portion of an external terminal. After providing the sealing layer, a second metal electrode is formed on each post and the associated first metal electrode. Then, an “alloy” of the first and second metal electrodes is formed by heating these electrodes. Accordingly, the external terminal can be formed on the top face and side face of each post without carrying out a step of removing the sealing layer by means of a laser.

Abstract: A semiconductor device includes a passivation film, an insulating film and an encapsulating layer, all of which are formed, in this order, on the surface of a semiconductor substrate provided with a connecting pad, and a bump electrode electrically connected to the connecting pad via a wiring passing through a first opening defined in the passivation film and a second opening defined in the insulating film. The bump electrode has a leading end portion exposed from the surface of the encapsulating layer.

Abstract: The present invention provides a semiconductor device wherein a passivation film, an insulating film and an encapsulating layer are formed, in this order, on the surface of a semiconductor substrate, which is provided with a electrode pad thereon, and a leading end portion of a bump electrode supported by the insulating film and electrically connected to the electrode pad is exposed from the surface of the encapsulating layer. In the semiconductor device, a slit-shaped opening, which extends along a peripheral edge of the bottom of the bump electrode, is defined in the insulating film.