Abstract: A substrate treatment apparatus includes a nozzle, a moving mechanism, a storage portion, and a control portion. The learned model is generated by learning, as learning data, learning target speed information indicating a moving speed of the nozzle and the amount of treatment acquired by executing a treatment on a substrate that is a learning target while causing the nozzle to move at a speed based on the learning target speed information. The control portion causes speed information at the time of treatment to be outputted from the learned model by inputting a target amount of an amount of treatment to the learned model. The control portion controls a moving mechanism such that the nozzle moves at a speed based on the speed information at the time of treatment when the treatment is executed on a substrate that is a treatment target.

Abstract: According to one embodiment, an electronic device includes a liquid crystal panel and an illumination unit which illuminates the liquid crystal panel. The illumination unit includes a light guide comprising a first side surface, a main surface opposing the liquid crystal panel and an opening made by a notch or a through hole, a first light source opposing to the first side surface, and a second light source provided closer to the opening than to the first light source.

Abstract: A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile.

Abstract: A substrate treatment apparatus includes: a substrate holding unit; a rotator for rotating the substrate holding unit; a first liquid nozzle for supplying a rinsing liquid; a second liquid nozzle for supplying a low surface tension liquid; a heater; a lifting mechanism for relatively moving up and down the heater between a contact position allowing the heater to be brought into contact with the lower surface of the substrate and a separation position allowing the heater to be separated from the substrate; a gas nozzle provided in an upper surface of the heater to suck the substrate; a suction pump for sucking an atmosphere above the heater through the gas nozzle; a gas supply source for supplying an inert gas toward above the heater through the gas nozzle; and a controller for selectively performing suction of the atmosphere or supply of the inert gas, through the gas nozzle.

Abstract: A substrate processing method includes a substrate holding step of holding a substrate by means of a substrate holder which holds the substrate horizontally with an interval upward from an upper surface of a base, a first processing liquid supplying step of supplying a first processing liquid to an upper surface of the substrate held by the substrate holder, a cleaning liquid supplying step of supplying a cleaning liquid so as to wash away the first processing liquid attached to the upper surface of the base, to the upper surface of the base such that the cleaning liquid on the base does not contact a lower surface of the substrate held by the substrate holder, and a removing step of removing the cleaning liquid from the upper surface of the base.

Abstract: Provided is a substrate processing method for processing a substrate. The substrate processing method includes a step of processing the substrate with a phosphoric acid liquid, a step of processing the substrate with a rinsing liquid, and a step of processing the substrate with a chemical liquid containing ammonia. After the substrate is processed with the rinsing liquid, the step of processing the substrate with a chemical liquid removes a portion of thickness of a film in a depth direction of a phosphorus diffusion region from the phosphorus diffusion region formed in the substrate when the substrate is processed with the phosphoric acid liquid.

Abstract: A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.

Abstract: An illumination device is provided and includes a light guide; a light emitting unit facing the light guide; a wiring substrate provided on the light emitting unit; and a frame surrounding the light guide and the light emitting unit, wherein the wiring substrate has a first edge and a second edge which extend in the first direction, and a third edge which connects the first edge and the second edge, the frame has a fourth edge facing the third edge; the third edge and the fourth edge are spaced apart from each other and form a trench which communicates with an outside of the illumination device, and a length of the third edge and a length of the fourth edge along the trench are larger than a distance between the first edge and the second edge in a second direction intersecting the first direction.

Abstract: A substrate processing method for processing a surface of a substrate includes: a first solvent supply step (a) of supplying IPA to a surface of a substrate while rotating the substrate to treat the surface; a modification treatment liquid supply step (b) of supplying a silylating solution after the first solvent supply step to form a liquid film; and a step (c) of heating the substrate in the first solvent supply step and the modification treatment liquid supply step. The step (c) is configured such that an amount of heat per unit time to be applied to the substrate in the modification treatment liquid supply step is larger than an amount of heat per unit time applied to the substrate in the first solvent supply step.

Abstract: A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.

Abstract: A processing liquid is supplied to an upper surface of a horizontally-held substrate to form a liquid film of the processing liquid that covers an entirety of the substrate upper surface. The substrate is heated to evaporate the processing liquid in contact with the upper surface of the substrate to form a gas phase layer between the upper surface of the substrate and the liquid film of the processing liquid. After the gas phase layer has been formed, a gas is blown onto the liquid film above the substrate to open a hole in the liquid film. The gas is blown onto a region inside the hole in the liquid film to move the liquid film on the gas phase layer. A direction of a gas stream at a substrate outer peripheral portion is changed to remove the liquid film at the substrate outer peripheral portion.

Abstract: According to one embodiment, an illumination device includes a light guide, a frame surrounding the light guide, a light emitting unit located between the light guide and the frame, and a wiring substrate electrically connected to the light emitting unit. The wiring substrate includes a convex portion projecting in a first direction as seen in plan view. The frame includes a concave portion facing the convex portion as seen in plan view. The concave portion is spaced apart from the convex portion.

Abstract: Method for performing cleaning treatment on a substrate having a fine pattern provided with a film formed on the surface, comprises: a silylating step of supplying a silylating agent to the surface of the substrate and silylating the surface of the substrate; and a liquid-chemical cleaning step of supplying a cleaning liquid chemical to the surface of the substrate and cleaning the surface of the substrate after, or simultaneously with, the silylating step.

Abstract: In a substrate processing apparatus, a phosphoric acid aqueous solution is supplied to a processor, and a liquid collection from the processor is concurrently performed. Further, a silicon concentration is adjusted, to supply an adjusted processing liquid to the processor. Thus, a phosphoric acid aqueous solution film is formed on the substrate. The liquid film is heated by a heating device. The heating device has lamp heaters in a casing made of a silica glass. The phosphoric acid aqueous solution on the substrate is irradiated with infrared rays. A nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.

Abstract: A substrate processing method includes a substrate holding step of horizontally holding a substrate, a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction, a liquid-film forming step of forming a liquid film of a first organic solvent that is used to process an upper surface of the substrate on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate held horizontally, a vapor supplying step of supplying a vapor of a second organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate, a substrate heating step of heating the substrate being in a rotational state by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step, and a substrate drying step of, after the substrate heating step, exc

Abstract: In a substrate processing method, a substrate holding unit holds a substrate in a horizontal position, a processing liquid supplying unit supplies first and second processing liquids to the surface of the substrate held by the substrate holding unit, a substrate rotating unit rotates the substrate held by the substrate holding unit, a heater opposes the substrate held by the substrate holding unit, and a moving unit moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate are held in two different relative positions.

Abstract: In a substrate processing apparatus, a phosphoric acid aqueous solution is supplied to a processor, and a liquid collection from the processor is concurrently performed. Further, a silicon concentration is adjusted, to supply an adjusted processing liquid to the processor. Thus, a phosphoric acid aqueous solution film is formed on the substrate. The liquid film is heated by a heating device. The heating device has lamp heaters in a casing made of a silica glass. The phosphoric acid aqueous solution on the substrate is irradiated with infrared rays. A nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.

Abstract: Provided is a substrate processing method for processing a substrate. The substrate processing method includes a step of processing the substrate with a phosphoric acid liquid, a step of processing the substrate with a rinsing liquid, and a step of processing the substrate with a chemical liquid containing ammonia. After the substrate is processed with the rinsing liquid, the step of processing the substrate with a chemical liquid removes a portion of thickness of a film in a depth direction of a phosphorus diffusion region from the phosphorus diffusion region formed in the substrate when the substrate is processed with the phosphoric acid liquid.

Abstract: A substrate processing method for processing a surface of a substrate includes: a first solvent supply step (a) of supplying IPA to a surface of a substrate while rotating the substrate to treat the surface; a modification treatment liquid supply step (b) of supplying a silylating solution after the first solvent supply step to form a liquid film; and a step (c) of heating the substrate in the first solvent supply step and the modification treatment liquid supply step. The step (c) is configured such that an amount of heat per unit time to be applied to the substrate in the modification treatment liquid supply step is larger than an amount of heat per unit time applied to the substrate in the first solvent supply step.

Abstract: According to one embodiment, an illumination device includes a light guide, a frame surrounding the light guide, a light emitting unit located between the light guide and the frame, and a wiring substrate electrically connected to the light emitting unit. The wiring substrate includes a convex portion projecting in a first direction as seen in plan view. The frame includes a concave portion facing the convex portion as seen in plan view. The concave portion is spaced apart from the convex portion.