Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A film forming method includes forming a cancel layer on a substrate, which is disposed within a processing container and on which a base film is formed, in a pressure-reduced atmosphere, the cancel layer cancelling orientation of the base film, forming an initial metal film by supplying a metal material gas and a boron-containing gas to the substrate on which the cancel layer is formed, and forming a main metal film on the substrate on which the initial metal film is formed.

Abstract: There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a B2H6 gas and a WF6 gas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the B2H6 gas and the supply of the WF6 gas.

Abstract: A method of forming a tungsten film on a surface of a target substrate having a base film is performed by repeating a cycle plural times. The cycle includes alternately supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas, with a purge interposed therebetween, into a process container in which the target substrate is accommodated and that is maintained under a depressurized atmosphere. The method includes setting a supply flow rate of the tungsten chloride gas and a time of the cycle such that a ratio of a thickness of the base film etched by repeating the cycle the plural times to a thickness of the base film before repeating the cycle the plural times becomes smaller than a predetermined ratio in a state where an integrated flow rate of the tungsten chloride gas per one cycle is kept substantially constant.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A film forming method includes a step of disposing a substrate on which an insulating film is formed in a processing container and forming a base film by repeatedly supplying a Ti-containing gas, an Al-containing gas, and a reaction gas into the processing container under a decompressed atmosphere; and a step of forming a metal layer made of a metal material on the substrate on which the base film is formed.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

Abstract: A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

Abstract: There is provided a film forming method including: forming an initial tungsten film on a base film formed on a substrate by alternately supplying a B2H6 gas and a WF6 gas while supplying a carrier gas into a processing container in a state in which the substrate is heated to a first temperature within the processing container maintained in a depressurized state; and forming a main tungsten film on the initial tungsten film by alternately supplying a tungsten-containing gas and a reducing gas for reducing the tungsten-containing gas into the processing container in a state in which the substrate is heated to a second temperature higher than the first temperature within the processing container maintained in the depressurized state.

Abstract: There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a B2H6 gas and a WF6 gas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the B2H6 gas and the supply of the WF6 gas.

Abstract: A film forming method includes forming a cancel layer on a substrate, which is disposed within a processing container and on which a base film is formed, in a pressure-reduced atmosphere, the cancel layer cancelling orientation of the base film, forming an initial metal film by supplying a metal material gas and a boron-containing gas to the substrate on which the cancel layer is formed, and forming a main metal film on the substrate on which the initial metal film is formed.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

Abstract: There is provided a method of forming a tungsten film on a surface of a target substrate having a base film by repeating a cycle plural times, the cycle including alternately supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas, with a purge interposed therebetween, into a process container in which the target substrate is accommodated and that is maintained under a depressurized atmosphere. The method includes setting a supply flow rate of the tungsten chloride gas and a time of the cycle such that a ratio of a thickness of the base film etched by repeating the cycle the plural times to a thickness of the base film before repeating the cycle the plural times becomes smaller than a predetermined ratio in a state where an integrated flow rate of the tungsten chloride gas per one cycle is kept substantially constant.

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of inert gas and has a noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

Abstract: The present invention is to provide a multiple detection method that can detect contaminating microorganisms existing in foods, including pathogenic Escherichia coli O157, Listeria monocytogenes and Salmonella spp., with high sensitivity comparable or even superior to official methods, comprising the steps of amplifying a plural number of target genes with a single PCR reaction tube and analyzing the same. The following steps are performed consecutively: (A) a step of extracting DNA of the target microorganisms to be detected by treating with at least a lytic enzyme such as Achromopepidase and Lysozyme and/or bacteriocin having lytic activity such as Enterolysine, a surfactant and a protein denaturing agent; and (B) a step of mixing a specific primer to the target microorganisms to be detected to perform multiplex PCR. Further, it is preferable to add a step of culturing with a culture condition where 1 CFU/100 g microorganisms becomes 10.sup.