Abstract: A bottom plate (4a) of a box-shaped package (4) is made of a metal. Portions of the package (4) (peripheral wall (4b) and cover plate (4c)) other than the bottom plate (4a) are made of a resin or a ceramic that is more economical than the metal. The material cost of the package (4) can thus be reduced in comparison with the case where the package (4) is made of the metal as a whole. A Peltier module (5) is fixed to the bottom plate (4a). A base (6) is fixed over the Peltier module (5), and a semiconductor laser chip (2) is disposed on this base (6). Heat from the semiconductor laser chip (2) and from the Peltier module (5) can be efficiently radiated through the bottom plate (4a) made of the metal, and deterioration of heat radiation performance can be prevented.

Abstract: An optical module includes first and second fiber units that hold end portions of first and second optical fibers, and first and second collimators disposed between these fiber units and having first and second lenses, respectively. End faces of the first and second optical fibers are disposed on imaginary circumferences on the end faces of the first and second fiber units. Laser light beams from the end face of the first optical fiber are collimated by the first lens and then focused by the second lens, and enter the end face of the second optical fiber that is disposed diametrically opposite to the first optical fiber with respect to the center axis of the optical module.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: An optical module comprises an optical fiber having a formed portion to form a fiber grating and a package to which the optical fiber is secured. The package comprises a single package member or at least two or more package members whose materials differ from each other. The optical fiber is secured to the package member. A distortion for adjusting a Bragg reflection wavelength of the fiber grating of the optical fiber is given to the package member.

Abstract: An optical module comprising: a comb-shaped package having a plurality of teeth portions and a base portion; and at least one optical fiber having fiber grating, wherein respective fiber-grating formed portions of at least one optical fiber are placed in corresponding teeth portions and base portion of said package, and the optical fiber is fixed to the base portion and corresponding teeth portion in such manner that the fiber-grating formed portion exists between the base portion and the corresponding teeth portion.

Abstract: A method for manufacturing an optical connector ferrule according to the present invention is a method for manufacturing an optical connector ferrule where a plurality of fiber holes are arranged between two guide pin holes, wherein melted material resin is injected from one resin injection port into a cavity of a forming mold where two forming pins for forming the guide pin holes and a plurality of forming pins for forming the fiber hole are arranged in parallel to one another. A forming mold according to the present invention is provided with a cavity where a plurality of forming pins can be arranged in parallel to one another, and one resin injection port through which melted material resin can be injected into the cavity.

Abstract: A manufacturing apparatus for multi-fiber optical ferrule includes a spacer whose hardness is equivalent to or higher than the hardness of pins for forming fiber holes. Further, corner portions with respect to the arrangement direction of the pins for forming fiber holes of the spacer are formed as inclined surfaces or rounded surfaces.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: A bottom plate (4a) of a box-shaped package (4) is made of a metal. Portions of the package (4) (peripheral wall (4b) and cover plate (4c)) other than the bottom plate (4a) are made of a resin or a ceramic that is more economical than the metal. The material cost of the package (4) can thus be reduced in comparison with the case where the package (4) is made of the metal as a whole. A Peltier module (5) is fixed to the bottom plate (4a). A base (6) is fixed over the Peltier module (5), and a semiconductor laser chip (2) is disposed on this base (6). Heat from the semiconductor laser chip (2) and from the Peltier module (5) can be efficiently radiated through the bottom plate (4a) made of the metal, and deterioration of heat radiation performance can be prevented.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: An optical module comprises a substrate (2), formed with wiring patterns for electrical signals and having a mounting surface (2b) mounted with one or more semiconductor optical elements (4), and a package (7, 8) in which the substrate (2) is located. The substrate (2) is formed with at least one first positioning section (2c), the package (7) is formed of a synthetic resin and includes a disposition section (7e) in which one or more optical waveguide components are opposed to the semiconductor optical elements (4), and a second positioning section (7g) adapted to engage the first positioning section, thereby positioning the semiconductor optical elements and the disposition section.

Abstract: In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

Abstract: A method for manufacturing a ferrule having butt end face on the front and positioning holes on both sides in the width direction and formed with plurality of fiber holes for inserting optical fibers, arranged in such a manner as to be inclined in the thickness direction, by using at least two molds which are arranged in an opposed manner and either or both of which can be moved in the opening/closing direction. Each of at least two molds has a first forming wall for forming the butt end face and a second forming wall for forming a working portion for applying a pressing force perpendicular to the butt end face at the rear of the ferrule. A core for forming the fiber hole and molding pins for forming the positioning holes are arranged in parallel and held in such a manner as to be inclined at a predetermined angle .theta. in the thickness direction of the ferrule molded by at least two molds.

Abstract: An optical waveguide chip assembly in which a plurality of optical waveguide patterns and two positioning grooves are laterally arranged is prepared by forming a plurality of optical waveguide patterns and two positioning grooves on a wafer in parallel to each other and cutting the wafer. Separately from this, an optical fiber array assembly having a plurality of optical fiber array cables and two guide pin holes is prepared. The optical waveguide chip assembly and the optical fiber array assembly are joined while aligning by the guide pins and then divided into units of individual optical waveguide modules. A large number of optical waveguide modules can be made with a good efficiency, and the mass productivity is improved. Since a plurality of optical waveguide modules are made by the same positioning, variations among products can be reduced.

Abstract: An optical connector including a ferrule having a butt end face at a front portion thereof and positioning holes formed at opposite sides of the ferrule in a widthwise direction of the ferrule. A plurality of optical fibers are coupled to the ferrule, and the optical connector is adapted to be abutted against another optical connector in an abutting direction. The positioning pin holes and the plurality of optical fibers are arranged in parallel with each other at least in the vicinity of the butt end face of the ferrule so that an arrangement plane of the plurality of optical fibers and the positioning pin holes is inclined at an inclination angle of .theta. with respect to a plane of the abutting direction, and so that a line where the butt end face and the arrangement plane cross each other is orthogonal to each axis of the plurality of optical fibers.

Abstract: A driver regards a relative acceleration of a subject vehicle with respect to an object such as a preceding vehicle, an obstacle and the like as one having highest priority, and performs control such that deceleration is immediately started even if a relative velocity is small if the relative acceleration is large. Taking note of this point, the relative acceleration between the subject vehicle and the object is detected, and it is judged whether or not the subject vehicle and the object relatively approach each other at a relative acceleration not less than a predetermined value. A vehicle velocity is controlled such that the relative acceleration is not more than a predetermined target relative acceleration (for which a direction for approach is positive) when the subject vehicle and the object relatively approach each other at a relative acceleration not less than the predetermined value. Thus, the start of deceleration felt by the driver is adequate.

Abstract: An optical fiber end portion (10) which has a ferrule (11) which comprises a butting end face (11e) opposed to or butted against an optical device (20), and a single fiber hole or a plurality of fiber holes formed in parallel at predetermined intervals, into which one end of optical fiber (13a) is inserted, the optical fiber being optically connected to said optical device, a method for manufacturing the optical fiber end portion, and a construction for connecting the end portion to the optical device. The ferrule is formed of a molded product of synthetic resin, and is provided with at least one connecting member (12) on the side of butting end face connected to the optical device. The connecting member (12) has a linear expansion coefficient set at a value smaller than the linear expansion coefficient of a synthetic resin forming the ferrule.