Patents by Inventor Takashi Shimazu
Takashi Shimazu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8889477Abstract: A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.Type: GrantFiled: September 5, 2012Date of Patent: November 18, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tetsunori Maruyama, Yuki Imoto, Hitomi Sato, Masahiro Watanabe, Mitsuo Mashiyama, Kenichi Okazaki, Motoki Nakashima, Takashi Shimazu
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Patent number: 8884287Abstract: A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.Type: GrantFiled: December 24, 2013Date of Patent: November 11, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichiro Sakata, Takashi Shimazu, Hiroki Ohara, Toshinari Sasaki, Shunpei Yamazaki
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Publication number: 20140319520Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.Type: ApplicationFiled: July 15, 2014Publication date: October 30, 2014Inventors: Junichiro SAKATA, Takashi SHIMAZU, Hiroki OHARA, Toshinari SASAKI, Shunpei YAMAZAKI
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Patent number: 8846530Abstract: To provide a method for manufacturing a power storage device which enables improvement in performance of the power storage device, such as an increase in discharge capacity. To provide a method for forming a semiconductor region which is used for a power storage device or the like so as to improve performance. A method for forming a crystalline semiconductor region includes the steps of: forming, over a conductive layer, a crystalline semiconductor region that includes a plurality of whiskers including a crystalline semiconductor by an LPCVD method; and performing heat treatment on the crystalline semiconductor region after supply of a source gas containing a deposition gas including silicon is stopped. A method for manufacturing a power storage device includes the step of using the crystalline semiconductor region as an active material layer of the power storage device.Type: GrantFiled: June 13, 2011Date of Patent: September 30, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Furuno, Takashi Shimazu
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Publication number: 20140283544Abstract: A heat exchange reactor includes: a first flow path through which a heat exchange fluid flows; a second flow path through which a working fluid flows; and an adsorbent shaped body that is disposed in the second flow path, the adsorbent shaped body having a heat transfer face at which heat is exchanged with the heat exchange fluid flowing in the first flow path, and plural recessed portions arrayed in two dimensions at predetermined spacings along a direction in which the working fluid flows such that the working fluid flows into the plurality of recessed portions, the adsorbent shaped body including an adsorbent and a fibrous thermally conductive material, the adsorbent releasing heat when the working fluid is adsorbed and accumulating heat when the working fluid is desorbed, and the fibrous thermally conductive material being disposed such that an axial direction thereof is oriented in a direction that intersects with the heat transfer face.Type: ApplicationFiled: March 18, 2014Publication date: September 25, 2014Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Yasuki HIROTA, Takafumi YAMAUCHI, Takashi SHIMAZU
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Publication number: 20140284026Abstract: An adsorption heat pump includes: a first evaporator that evaporates a first fluid; a condenser that condenses the first fluid; a heater; and a rotary adsorption device. The rotary adsorption device includes: partitioning portions that radially partition a space encircling the rotation axis into plural regions, that each include a flow path for internally retaining and discharging a second fluid, and that each include an adsorbent on an outer surface thereof or on a wall surface of the flow path; and a pair of closure portions that close off both ends, in the direction of the rotation axis, of the plural regions. Each of the partitioning portions is moved alternately between the first evaporator side and the condenser side by rotation around the rotation axis. In the partitioning portions, retention and discharge of the first fluid, and discharge and retention of the second fluid, are repeated.Type: ApplicationFiled: March 18, 2014Publication date: September 25, 2014Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Yasuki HIROTA, Takafumi YAMAUCHI, Ryuichi IWATA, Takashi SHIMAZU
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Publication number: 20140225109Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.Type: ApplicationFiled: April 17, 2014Publication date: August 14, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya HONDA, Masashi TSUBUKU, Yusuke NONAKA, Takashi SHIMAZU, Shunpei YAMAZAKI
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Publication number: 20140224453Abstract: An object is to enable a compact and high output heat storage system to perform warm-up rapidly when a vehicle is started up, and after warm-up, to recover surplus heat that is present in a heat source in the vehicle to prepare for the next warm-up event. A heat recovery-type heating device includes: an ammonia buffer configured so as to be capable of fixing and desorbing ammonia that serves as a chemical reaction medium; and a chemical heat storage reactor provided with a chemical heat storage material that generates heat through a chemical reaction with ammonia supplied from the ammonia buffer, and that desorbs ammonia using surplus heat from a heat source and returns the ammonia to the ammonia buffer.Type: ApplicationFiled: August 31, 2012Publication date: August 14, 2014Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Takafumi Yamauchi, Takashi Shimazu, Tsutomu Shinagawa, Shuzou Sanda
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Patent number: 8785929Abstract: An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitiride film.Type: GrantFiled: June 25, 2013Date of Patent: July 22, 2014Assignee: Semiconductor Energy Laboratory Co. Ltd.Inventors: Junichiro Sakata, Takashi Shimazu, Hiroki Ohara, Toshinari Sasaki, Shunpei Yamazaki
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Publication number: 20140191230Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.Type: ApplicationFiled: March 10, 2014Publication date: July 10, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya HONDA, Masashi TSUBUKU, Yusuke NONAKA, Takashi SHIMAZU
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Publication number: 20140193946Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.Type: ApplicationFiled: March 10, 2014Publication date: July 10, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Takuya HIROHASHI, Masahiro TAKAHASHI, Takashi SHIMAZU
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Patent number: 8729613Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.Type: GrantFiled: October 11, 2012Date of Patent: May 20, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
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Publication number: 20140113687Abstract: A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.Type: ApplicationFiled: December 24, 2013Publication date: April 24, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichiro SAKATA, Takashi SHIMAZU, Hiroki OHARA, Toshinari SASAKI, Shunpei YAMAZAKI
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Patent number: 8698214Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.Type: GrantFiled: October 18, 2012Date of Patent: April 15, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu
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Patent number: 8686425Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.Type: GrantFiled: August 14, 2012Date of Patent: April 1, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Takuya Hirohashi, Masahiro Takahashi, Takashi Shimazu
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Publication number: 20140053577Abstract: A heat pump including an evaporator and an adsorber is provided. The adsorber is regenerated by applying heat from a chemical thermal storage reactor, a heat accumulator or an external heat source, at a temperature higher than or equal to a temperature to regenerate the adsorber.Type: ApplicationFiled: August 21, 2013Publication date: February 27, 2014Inventors: Yasuki HIROTA, Takashi SHIMAZU, Takafumi YAMAUCHI, Tomohisa WAKASUGI, Ryuichi IWATA
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Patent number: 8643009Abstract: To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.Type: GrantFiled: September 4, 2012Date of Patent: February 4, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichiro Sakata, Hiromichi Godo, Takashi Shimazu
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Patent number: 8629432Abstract: A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.Type: GrantFiled: January 7, 2010Date of Patent: January 14, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichiro Sakata, Takashi Shimazu, Hiroki Ohara, Toshinari Sasaki, Shunpei Yamazaki
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Publication number: 20130343683Abstract: When temperature of lubricating oil is raised at a time of low-temperature, of an outer peripheral side of a radial plain bearing in a bearing retaining unit, heat is not supplied from a heating medium in a thermal medium flow path on the outer peripheral side of a halved bearing metal in a bearing retaining unit body, which has a large thermal capacity, and instead, heat is supplied from the heating medium in the thermal medium flow path on the outer peripheral side of a halved bearing metal in the cap, which has a small thermal capacity.Type: ApplicationFiled: March 12, 2012Publication date: December 26, 2013Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Shuzou Sanda, Takashi Shimazu, Yasuhiro Ohmiya, Yoshihiro Hotta
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Patent number: 8604481Abstract: A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.Type: GrantFiled: October 3, 2012Date of Patent: December 10, 2013Assignee: Semiconductor Energy Co., Ltd.Inventors: Hidekazu Miyairi, Takeyoshi Watabe, Takashi Shimazu