Patents by Inventor Takashi Toyonaka
Takashi Toyonaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11916161Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.Type: GrantFiled: October 17, 2022Date of Patent: February 27, 2024Assignee: Lumentum Japan, Inc.Inventors: Takashi Toyonaka, Hiroshi Hamada, Shigehisa Tanaka
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Publication number: 20230411542Abstract: A semiconductor photodetector includes: a substrate; a light-receiving mesa structure, on a first surface of the substrate, including semiconductor layers that includes an absorption layer; an insulating film overlapping with the light-receiving mesa structure in a transverse direction, the insulating film surrounding a side surface of the light-receiving mesa structure; a first electrode, on the first surface, including a mesa electrode electrically connected to and in contact with a top surface of a top layer of the semiconductor layers, the first electrode including a protruding electrode on the insulating film, the protruding electrode being electrically continuous to the mesa electrode, extending outward, and overlapping with the light-receiving mesa structure in the transverse direction, the protruding electrode being smaller in width than the mesa electrode; and a second electrode, on the first surface, electrically connected to a bottom surface of a bottom layer of the semiconductor layers.Type: ApplicationFiled: September 27, 2022Publication date: December 21, 2023Inventors: Takashi TOYONAKA, Suguru KATO, Hiroshi HAMADA
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Publication number: 20230072390Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.Type: ApplicationFiled: October 17, 2022Publication date: March 9, 2023Inventors: Takashi TOYONAKA, Hiroshi Hamada, Shigehisa Tanaka
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Patent number: 11476382Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.Type: GrantFiled: June 29, 2021Date of Patent: October 18, 2022Assignee: Lumentum Japan, Inc.Inventors: Takashi Toyonaka, Hiroshi Hamada, Shigehisa Tanaka
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Publication number: 20220238745Abstract: A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more.Type: ApplicationFiled: June 29, 2021Publication date: July 28, 2022Inventors: Takashi TOYONAKA, Hiroshi HAMADA, Shigehisa TANAKA
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Patent number: 11194105Abstract: A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.Type: GrantFiled: February 25, 2020Date of Patent: December 7, 2021Assignee: Lumentum Japan, Inc.Inventors: Hiroshi Hamada, Takashi Toyonaka
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Patent number: 10978605Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.Type: GrantFiled: March 8, 2019Date of Patent: April 13, 2021Assignee: Lumentum Japan, Inc.Inventors: Takashi Toyonaka, Hiroshi Hamada, Shigehisa Tanaka
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Publication number: 20200278507Abstract: A photoelectric conversion element includes a substrate including a lens-shaped convex portion and an annular concave portion surrounding the lens-shaped convex portion on a first main surface; a photoelectric conversion layer, positioned on an optical path of light passing through the lens-shaped convex portion, on a second main surface side of the substrate; and a pattern disposed on an outer peripheral side of the annular concave portion on the first main surface and disposed to interpose the lens-shaped convex portion from a first direction and a second direction intersecting the first direction.Type: ApplicationFiled: February 25, 2020Publication date: September 3, 2020Inventors: Hiroshi HAMADA, Takashi TOYONAKA
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Publication number: 20190280147Abstract: Provided are a semiconductor photodiode which achieves a higher response rate in a state in which light receiving sensitivity is maintained. The semiconductor photodiode includes a p-type semiconductor contact layer, an n-type semiconductor contact layer, and a light absorption layer. The light absorption layer includes a first semiconductor absorption layer having a thickness Wd and a p-type second semiconductor absorption layer having a thickness Wp. The first semiconductor absorption layer and the second absorption layer are made of the same composition. The first semiconductor absorption layer is depleted, and the second semiconductor absorption layer maintains an electric charge neutral condition except for a region near an interface with the first semiconductor absorption layer. A relationship between the thickness Wd and the thickness Wp satisfies 0.47?Wp/(Wp+Wd)?0.9.Type: ApplicationFiled: March 8, 2019Publication date: September 12, 2019Inventors: Takashi TOYONAKA, Hiroshi HAMADA, Shigehisa TANAKA
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Patent number: 10393972Abstract: The optical subassembly includes a photodetector including element terminal groups for light-receiving elements, and an electric signal controller including IC terminal groups, wherein any one of the element terminal group and the IC terminal group has a two-terminal configuration, and the other one has a three-terminal configuration, wherein, in a case where terminal groups at both ends where center positions thereof are disposed on the inner side together and have the two-terminal configuration, the first connection terminals are disposed on the outer side than a second connection terminals in the two-terminal configuration, and in a case where terminal groups at both ends where center positions thereof are on the outer side together and have the two-terminal configuration, a first connection terminal in the two-terminal configuration is disposed on the inner side than the second connection terminal.Type: GrantFiled: September 26, 2017Date of Patent: August 27, 2019Assignee: Lumentum Japan, Inc.Inventors: Takashi Toyonaka, Hiroshi Hamada
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Patent number: 10204955Abstract: Provided is a back illuminated photo detector enabling easy determination of whether or not the radius of a beam spot on a light absorption layer is an appropriate size. The back illuminated photo detector includes: a semiconductor substrate having a first surface for receiving light; a semiconductor layer that is laminated on a second surface and includes a light absorption layer; a passivation film so as to expose a contact portion that is part of an upper surface of the semiconductor layer; and an electrode that is in contact with the semiconductor layer in the contact portion, and has a reflectance lower than that of the passivation film. The contact portion includes a center portion located on an optical axis, and an area of the center portion is smaller than a design cross-sectional area of a beam spot.Type: GrantFiled: April 21, 2017Date of Patent: February 12, 2019Assignee: Oclaro Japan, Inc.Inventors: Hiroshi Hamada, Takashi Toyonaka
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Publication number: 20180088293Abstract: The optical subassembly includes a photodetector including element terminal groups for light-receiving elements, and an electric signal controller including IC terminal groups, wherein any one of the element terminal group and the IC terminal group has a two-terminal configuration, and the other one has a three-terminal configuration, wherein, in a case where terminal groups at both ends where center positions thereof are disposed on the inner side together and have the two-terminal configuration, the first connection terminals are disposed on the outer side than a second connection terminals in the two-terminal configuration, and in a case where terminal groups at both ends where center positions thereof are on the outer side together and have the two-terminal configuration, a first connection terminal in the two-terminal configuration is disposed on the inner side than the second connection terminal.Type: ApplicationFiled: September 26, 2017Publication date: March 29, 2018Inventors: Takashi TOYONAKA, Hiroshi HAMADA
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Publication number: 20170309658Abstract: Provided is aback illuminated photo detector enabling easy determination of whether or not the radius of a beam spot on a light absorption layer is an appropriate size. The back illuminated photo detector includes: a semiconductor substrate having a first surface for receiving light; a semiconductor layer that is laminated on a second surface and includes a light absorption layer; a passivation film so as to expose a contact portion that is part of an upper surface of the semiconductor layer; and an electrode that is in contact with the semiconductor layer in the contact portion, and has a reflectance lower than that of the passivation film. The contact portion includes a center portion located on an optical axis, and an area of the center portion is smaller than a design cross-sectional area of a beam spot.Type: ApplicationFiled: April 21, 2017Publication date: October 26, 2017Inventors: Hiroshi HAMADA, Takashi TOYONAKA
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Patent number: 9312965Abstract: An optical receiver module capable of increasing the range in which the error in distance between a collecting lens and a light receiving section is allowed is provided. In the optical receiver module according to the invention, the optical receiver includes a semiconductor substrate to which the light from the collecting lens is input, and through which the light passes, and a light receiving section disposed on a side (a reverse side) of the semiconductor substrate, the side being further from the collecting lens, and adapted to receive the light transmitted through the semiconductor substrate, and then convert the light into an electrical signal. On a side (an obverse side) of the semiconductor substrate, the side being nearer to the collecting lens, there is formed a lens surface adapted to converge light from the collecting lens toward the light receiving section.Type: GrantFiled: November 12, 2013Date of Patent: April 12, 2016Assignee: OCLARO JAPAN, INC.Inventors: Koki Iemura, Takashi Toyonaka, Hiroshi Hamada
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Patent number: 9035407Abstract: Provided is a receiver module, including: a semiconductor light receiving element including an electrode; and a sub-mount including: an electrical wiring joined to the electrode with solder; and a trap region arranged around a joining surface of the electrical wiring, the trap region retaining solder by solder wetting.Type: GrantFiled: December 11, 2012Date of Patent: May 19, 2015Assignee: Oclaro Japan, Inc.Inventors: Hiroshi Hamada, Takashi Toyonaka
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Patent number: 8907266Abstract: A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.Type: GrantFiled: May 7, 2012Date of Patent: December 9, 2014Assignee: Oclaro Japan, Inc.Inventors: Takashi Toyonaka, Takuma Ban, Hiroshi Hamada
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Publication number: 20140133871Abstract: An optical receiver module capable of increasing the range in which the error in distance between a collecting lens and a light receiving section is allowed is provided. In the optical receiver module according to the invention, the optical receiver includes a semiconductor substrate to which the light from the collecting lens is input, and through which the light passes, and a light receiving section disposed on a side (a reverse side) of the semiconductor substrate, the side being further from the collecting lens, and adapted to receive the light transmitted through the semiconductor substrate, and then convert the light into an electrical signal. On a side (an obverse side) of the semiconductor substrate, the side being nearer to the collecting lens, there is formed a lens surface adapted to converge light from the collecting lens toward the light receiving section.Type: ApplicationFiled: November 12, 2013Publication date: May 15, 2014Applicant: Oclaro Japan, Inc.Inventors: Koki IEMURA, Takashi TOYONAKA, Hiroshi HAMADA
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Patent number: 8575714Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.Type: GrantFiled: April 13, 2011Date of Patent: November 5, 2013Assignee: Oclaro Japan, Inc.Inventors: Takashi Toyonaka, Hiroshi Hamada, Masataka Yokosawa
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Publication number: 20120292731Abstract: A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.Type: ApplicationFiled: May 7, 2012Publication date: November 22, 2012Applicant: OPNEXT JAPAN, INC.Inventors: Takashi TOYONAKA, Takuma BAN, Hiroshi HAMADA
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Publication number: 20110286083Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.Type: ApplicationFiled: April 13, 2011Publication date: November 24, 2011Applicant: OPNEXT JAPAN, INC.Inventors: Takashi TOYONAKA, Hiroshi HAMADA, Masataka YOKOSAWA