Patents by Inventor Takashi Tsunehiro
Takashi Tsunehiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10204003Abstract: A failure region is specified when a failure occurs in a non-volatile semiconductor memory. When a device controller reads data stored in a specific page in a plurality of non-volatile semiconductor memories to detect an uncorrectable error (UE) of the data stored in the specific page, the device controller executes a diagnosis process including specifying a specific storage circuit that is a storage circuit including the specific page, reading data stored in a part of blocks of the specific storage circuit, and specifying, on the basis of a result of reading data stored in the block, a failure region in the specific storage circuit.Type: GrantFiled: August 27, 2014Date of Patent: February 12, 2019Assignee: Hitachi, Ltd.Inventors: Kenta Ninose, Takuji Itou, Fumio Yoshioka, Takashi Tsunehiro, Go Uehara, Shigeo Homma
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Patent number: 10102060Abstract: In a storage apparatus including a storage medium including a plurality of pages as a unit of reading and writing data, a first data block including a data block received from a higher-level device is generated, a second data block of a predetermined size including one or more undivided first data blocks is generated, a third data block in which a correction code is added to the second data block is generated, the third data block is stored in a page buffer, and one or more of the third data blocks stored in the page buffer is written in a page, which is a write destination, out of the pages of the storage medium.Type: GrantFiled: August 30, 2013Date of Patent: October 16, 2018Assignee: Hitachi, Ltd.Inventors: Hideyuki Koseki, Takashi Tsunehiro, Junji Ogawa, Nagamasa Mizushima, Atsushi Kawamura
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Publication number: 20180225050Abstract: A semiconductor storage device has a nonvolatile semiconductor memory comprised from multiple storage areas, and a controller, which is coupled to the nonvolatile semiconductor memory. The controller (A) identifies a storage area state, which is the state of a storage area, (B) decides, based on the storage area state identified in the (A), a read parameter, which is a parameter for use when reading data from a storage area with respect to a storage area of this storage area state, and (C) uses the read parameter decided in the (B) with respect to a read-target storage area and reads data from this read-target storage area.Type: ApplicationFiled: April 2, 2018Publication date: August 9, 2018Applicant: Hitachi, Ltd.Inventors: Akifumi Suzuki, Takashi Tsunehiro
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Patent number: 9946472Abstract: A semiconductor storage device has a nonvolatile semiconductor memory comprised from multiple storage areas, and a controller, which is coupled to the nonvolatile semiconductor memory. The controller (A) identifies a storage area state, which is the state of a storage area, (B) decides, based on the storage area state identified in the (A), a read parameter, which is a parameter for use when reading data from a storage area with respect to a storage area of this storage area state, and (C) uses the read parameter decided in the (B) with respect to a read-target storage area and reads data from this read-target storage area.Type: GrantFiled: February 19, 2016Date of Patent: April 17, 2018Assignee: HITACHI, LTD.Inventors: Akifumi Suzuki, Takashi Tsunehiro
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Publication number: 20160259675Abstract: A failure region is specified when a failure occurs in a non-volatile semiconductor memory. When a device controller reads data stored in a specific page in a plurality of non-volatile semiconductor memories to detect an uncorrectable error (UE) of the data stored in the specific page, the device controller executes a diagnosis process including specifying a specific storage circuit that is a storage circuit including the specific page, reading data stored in a part of blocks of the specific storage circuit, and specifying, on the basis of a result of reading data stored in the block, a failure region in the specific storage circuit.Type: ApplicationFiled: August 27, 2014Publication date: September 8, 2016Applicant: HITACHI, LTD.Inventors: Kenta NINOSE, Takuji ITOU, Fumio YOSHIOKA, Takashi TSUNEHIRO, Go UEHARA, Shigeo HOMMA
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Publication number: 20160170664Abstract: A semiconductor storage device has a nonvolatile semiconductor memory comprised from multiple storage areas, and a controller, which is coupled to the nonvolatile semiconductor memory. The controller (A) identifies a storage area state, which is the state of a storage area, (B) decides, based on the storage area state identified in the (A), a read parameter, which is a parameter for use when reading data from a storage area with respect to a storage area of this storage area state, and (C) uses the read parameter decided in the (B) with respect to a read-target storage area and reads data from this read-target storage area.Type: ApplicationFiled: February 19, 2016Publication date: June 16, 2016Applicant: Hitachi, Ltd.Inventors: AKIFUMI SUZUKI, Takashi TSUNEHIRO
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Patent number: 9299455Abstract: A semiconductor storage device has a nonvolatile semiconductor memory comprised from multiple storage areas, and a controller, which is coupled to the nonvolatile semiconductor memory. The controller (A) identifies a storage area state, which is the state of a storage area, (B) decides, based on the storage area state identified in the (A), a read parameter, which is a parameter for use when reading data from a storage area with respect to a storage area of this storage area state, and (C) uses the read parameter decided in the (B) with respect to a read-target storage area and reads data from this read-target storage area.Type: GrantFiled: March 6, 2012Date of Patent: March 29, 2016Assignee: Hitachi, Ltd.Inventors: Akifumi Suzuki, Takashi Tsunehiro
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Publication number: 20160011938Abstract: In a storage apparatus including a storage medium including a plurality of pages as a unit of reading and writing data, a first data block including a data block received from a higher-level device is generated, a second data block of a predetermined size including one or more undivided first data blocks is generated, a third data block in which a correction code is added to the second data block is generated, the third data block is stored in a page buffer, and one or more of the third data blocks stored in the page buffer is written in a page, which is a write destination, out of the pages of the storage medium.Type: ApplicationFiled: August 30, 2013Publication date: January 14, 2016Applicant: Hitachi, Ltd.Inventors: Hideyuki KOSEKI, Takashi TSUNEHIRO, Junji OGAWA, Nagamasa MIZUSHIMA, Atsushi KAWAMURA
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Patent number: 9129699Abstract: A semiconductor storage apparatus comprises a memory controller and flash memories which include a plurality of blocks as storage areas. The memory controller is configured to manage a degree of deterioration and read frequency for each of the plurality of blocks. A reliability maintained period is calculated for each storage area based on the degree of deterioration and read frequency for each storage area of a flash memory, and refresh is executed on each storage area in a planned manner based on the calculated reliability maintained period by newly storing the data stored in a block in another block based on an obtained reliability maintained period. The memory controller may also be configured to execute verification on each block and, if the number of failure bits is larger than a predetermined threshold, execute refresh to store data which is stored in a verification target block in another block.Type: GrantFiled: April 28, 2011Date of Patent: September 8, 2015Assignee: Hitachi, Ltd.Inventors: Akifumi Suzuki, Takashi Tsunehiro
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Patent number: 8898545Abstract: A memory controller adds the redundant information that is used to correct an error for each of data of a predetermined length and stores the data into the nonvolatile memory in the case in which data is written to the nonvolatile memory, the memory controller reads data and the redundant information that has been added to the data from the nonvolatile memory in the case in which data is read from the nonvolatile memory, and the memory controller corrects an error based on the redundant information in the case in which the data includes an error. The memory controller stores data that is in a basic unit that is a unit of an error correction configured by the data of a predetermined length and the redundant information that is added to the data of a predetermined length into a plurality of predetermined pages in a dispersed manner.Type: GrantFiled: May 18, 2012Date of Patent: November 25, 2014Assignee: Hitachi, Ltd.Inventors: Takashi Tsunehiro, Akifumi Suzuki, Junji Ogawa
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Patent number: 8719668Abstract: Provided in one embodiment is a nonvolatile storage system having multiple nonvolatile storage media and a controller coupled to the multiple nonvolatile storage media. The controller has a storage area configured to store management information including probability management information denoting error probability information of a unit physical area in a nonvolatile storage medium, and an error correcting circuit configured to carry out coding and decoding by a low density parity check code. The controller, in a data read process, is configured to identify based on management information an error probability, uses the identified error probability to correct the read data using the error correcting circuit.Type: GrantFiled: November 1, 2011Date of Patent: May 6, 2014Assignee: Hitachi, Ltd.Inventors: Akiyoshi Hashimoto, Akifumi Suzuki, Takashi Tsunehiro
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Publication number: 20130311854Abstract: A memory controller adds the redundant information that is used to correct an error for each of data of a predetermined length and stores the data into the nonvolatile memory in the case in which data is written to the nonvolatile memory, the memory controller reads data and the redundant information that has been added to the data from the nonvolatile memory in the case in which data is read from the nonvolatile memory, and the memory controller corrects an error based on the redundant information in the case in which the data includes an error. The memory controller stores data that is in a basic unit that is a unit of an error correction configured by the data of a predetermined length and the redundant information that is added to the data of a predetermined length into a plurality of predetermined pages in a dispersed manner.Type: ApplicationFiled: May 18, 2012Publication date: November 21, 2013Inventors: Takashi Tsunehiro, Akifumi Suzuki, Junji Ogawa
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Publication number: 20130238836Abstract: A semiconductor storage device has a nonvolatile semiconductor memory comprised from multiple storage areas, and a controller, which is coupled to the nonvolatile semiconductor memory. The controller (A) identifies a storage area state, which is the state of a storage area, (B) decides, based on the storage area state identified in the (A), a read parameter, which is a parameter for use when reading data from a storage area with respect to a storage area of this storage area state, and (C) uses the read parameter decided in the (B) with respect to a read-target storage area and reads data from this read-target storage area.Type: ApplicationFiled: March 6, 2012Publication date: September 12, 2013Inventors: Akifumi Suzuki, Takashi Tsunehiro
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Patent number: 8510572Abstract: Disclosed is a secure remote access system for improving convenience of a user by utilizing a storage device including an anti-tampering device as a user authentication device in the secure remote access system for making access and execution of job while a user is making the encrypted communication to a server from an unspecified client. Usability can be improved and thereby the job executing function can be used smoothly at the internal and external sides of the working office by providing a server client system where the server can be manipulated remotely by distributing a storage device loading the authorized anti-tampering device to users, connecting the storage device to unspecified clients by users, and using the authentication information and application stored in the storage device. A remote access system having improved security and convenient during usage of client from the user can also be provided by reducing the secret information remaining in the manipulated client.Type: GrantFiled: October 31, 2007Date of Patent: August 13, 2013Assignee: Hitachi, Ltd.Inventors: Takatoshi Kato, Nagamasa Mizushima, Takashi Tsunehiro, Makoto Kayashima, Kazushi Nakagawa
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Publication number: 20130111299Abstract: A nonvolatile storage system has multiple nonvolatile storage media and a controller coupled to the multiple nonvolatile storage media. The controller has a storage area for storing management information including probability management information denoting error probability information of a unit physical area in a nonvolatile storage medium, and an error correcting circuit for carrying out coding and decoding by a low density parity check code. An error probability is a probability that data within the unit physical area is incorrect, and is a prior probability, which is the probability of prior to this data having been read.Type: ApplicationFiled: November 1, 2011Publication date: May 2, 2013Inventors: Akiyoshi Hashimoto, Akifumi Suzuki, Takashi Tsunehiro
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Publication number: 20120278533Abstract: A reliability maintained period is calculated for each storage area based on the degree of deterioration and read frequency for each storage area of a flash memory, and refresh is executed on each storage area in a planned manner based on the calculated reliability maintained period. A semiconductor storage apparatus 100A is configured so that flash memories 120 to 128 and a memory controller 110 are connected and the flash memories 120 to 128 include a plurality of blocks as storage areas; and the memory controller 110 manages the degree of deterioration and read frequency of the blocks for each of the plurality of blocks, obtains a reliability maintained period of data stored in the block based on the managed degree of deterioration and read frequency of the block, and executes refresh for correcting failure bits of the relevant data by newly storing the data stored in the block in another block based on the obtained reliability maintained period.Type: ApplicationFiled: April 28, 2011Publication date: November 1, 2012Inventors: Akifumi Suzuki, Takashi Tsunehiro
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Publication number: 20120011307Abstract: A semiconductor storage apparatus is coupled with a system bus to receive a write request accompanied with first and second blocks of data, which are stored in nonvolatile semiconductor memories. A control device sends a first erase command to one of the nonvolatile memories to initiate a first internal erase operation of data within the nonvolatile memories. After the first erase command has been sent, the control device sends a second erase command to another one of the nonvolatile memories, to initiate a second internal erase operation of data within the other nonvolatile memory.Type: ApplicationFiled: August 16, 2011Publication date: January 12, 2012Inventors: Kenichi Kaki, Kunihiro Katayama, Takashi Tsunehiro
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Patent number: 8041787Abstract: A thin client terminal that can perform information processing in an off-line state is provided. A thin client terminal 101a sends a request for registration of data to be used off-line and designation of application software to be used off-line to a management server 107 through a remote computer 104. The management server 107 registers the data and application software according to the request. The thin client terminal 101 requests the management server 107 to acquire the requested data and application software, receives the data and application software, and stores the received data and application software into a storage medium 110.Type: GrantFiled: January 31, 2008Date of Patent: October 18, 2011Assignee: Hitachi, Ltd.Inventors: Hiromi Isokawa, Takashi Tsunehiro
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Patent number: 8031536Abstract: A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.Type: GrantFiled: March 29, 2010Date of Patent: October 4, 2011Assignee: S4, Inc.Inventors: Hajime Yamagami, Kouichi Terada, Yoshihiro Hayashi, Takashi Tsunehiro, Kunihiro Katayama, Kenichi Kaki, Takeshi Furuno
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Patent number: 8015417Abstract: Disclosed is a secure remote access system for improving convenience of a user by utilizing a storage device including an anti-tampering device as a user authentication device in the secure remote access system for making access and execution of job while a user is making the encrypted communication to a server from an unspecified client. Usability can be improved and thereby the job executing function can be used smoothly at the internal and external sides of the working office by providing a server client system where the server can be manipulated remotely by distributing a storage device loading the authorized anti-tampering device to users, connecting the storage device to unspecified clients by users, and using the authentication information and application stored in the storage device. A remote access system having improved security and convenient during usage of client from the user can also be provided by reducing the secret information remaining in the manipulated client.Type: GrantFiled: January 20, 2005Date of Patent: September 6, 2011Assignee: Hitachi, Ltd.Inventors: Takatoshi Kato, Nagamasa Mizushima, Takashi Tsunehiro, Makoto Kayashima, Kazushi Nakagawa