Abstract: Provided is a method for manufacturing a semiconductor device, wherein the method: obtains correlated information indicating relationship between a process condition under which a doping region is formed and a defect evaluation value of the doping region; forms the doping region in a substrate for evaluation under a set first process condition; obtains a measurement value of the defect evaluation value of the substrate for evaluation in which the doping region has been formed; obtains, in the correlated information, the defect evaluation value corresponding to the first process condition as a reference value, and compares the measurement value of the defect evaluation value with the reference value; and adjusts the process condition in a process of manufacturing the semiconductor device by using the substrate for manufacture.

Abstract: There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.

Abstract: Disclosed is a laser device including: a laser light source configured to emit laser light; a phase control unit configured to receive the laser light emitted from the laser light source, to control a spatial phase of a portion of the laser light, to emit the portion of the light as control light, and to emit another portion of the laser light as non-control light; a first optical system configured to irradiate an object with the control light emitted from the phase control unit; a detector configured to detect the non-control light emitted from the phase control unit; a second optical system configured to cause the non-control light emitted from the phase control unit to converge toward a detection surface of the detector.

Abstract: Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.

Abstract: A laser processing apparatus includes a support unit that supports a wafer including a plurality of functional elements disposed adjacent to each other via a street, an irradiation unit that irradiates the street with laser light, and a control unit that controls the irradiation unit based on information about the streets so that a first region and a second region of the street are simultaneously irradiated with the laser light, and a power of the laser light for removing a surface layer of the street in the first region is higher than a power for removing the surface layer of the street in the first region. The information about the street includes information that a processing threshold value indicating a difficulty of laser processing in the first region is lower than a processing threshold value in the second region.

Abstract: A cognitive function evaluation device includes: an obtainment unit that obtains utterance data indicating a voice of an evaluatee uttering a sentence as instructed; a calculation unit that calculates, from the utterance data obtained by the obtainment unit, a feature based on the utterance data; an evaluation unit that compares the feature calculated by the calculation unit to reference data indicating a relationship between voice data indicating a voice of a person and a cognitive function of the person to evaluate the cognitive function of the evaluatee; and an output unit that outputs the sentence to be uttered by the evaluatee and outputs a result of evaluation by the evaluation unit.

Abstract: To provide a cosmetic whose moisture-retaining property can be sufficiently secured even in cases where the cosmetic uses a hyaluronic acid compacted by neutralization of carboxyl groups of hyaluronic acid using a salt. A cosmetic of the present disclosure comprises a first agent containing at least one salt selected from the group consisting of an inorganic salt and an organic acid salt, and hyaluronic acid; and a second agent for swelling the hyaluronic acid, the second agent containing a chelating agent.

Abstract: To provide a manufacturing method of a semiconductor device including forming a lifetime control region from the side of a front surface of a semiconductor substrate, ion-implanting Ti into a bottom surface of a contact hole provided so as to penetrate through an interlayer dielectric film arranged on the front surface of the semiconductor substrate, and forming a Ti silicide layer at the bottom surface of the contact hole with anneal.

Abstract: The present disclosure aims to provide a novel refrigerant comprising HFO-1132(E).

Abstract: A semiconductor device, including a semiconductor substrate having a transistor portion and a diode portion, a drift region of a first conductivity type provided in the semiconductor substrate, a first electrode provided on one main surface side of the semiconductor substrate, and a second electrode provided on another main surface side of the semiconductor substrate, is provided. The diode portion includes a high concentration region and a crystalline defect region. The high concentration region has a higher doping concentration than the drift region and includes hydrogen. The doping concentration of the high concentration region at a peak position in a depth direction of the semiconductor substrate is equal to or less than 1.0×1015/cm3. The crystalline defect region is provided on the one main surface side of the semiconductor substrate relative to the peak position, has a higher crystalline defect density than the drift region, and includes hydrogen.

Abstract: Provided is a curable composition that can form a lens having excellent visibility, antiglare effects, and contrast-enhancing effects by suppressing thermal degradation of a tetraazaporphyrin compound. The curable composition according to the present disclosure includes silsesquioxane containing a cyclohexene oxide group, and a tetraazaporphyrin compound having an absorption peak in a wavelength region of from 570 to 605 nm, in which a content of the tetraazaporphyrin compound is from 1000 to 10000 ppm by weight of a content of the silsesquioxane.

Abstract: A manufacturing method of a semiconductor apparatus including: setting, depending on a distribution of the carrier concentrations that the buffer region should have, a dose amount of hydrogen ions to be implanted into a plurality of depth positions corresponding to the plurality of concentration peaks; and implanting, depending on the dose amount that is set in the setting, the hydrogen ions into the semiconductor substrate is provided. In the setting, among the plurality of concentration peaks, the dose amount of the hydrogen ions for a deepest peak farthest from the lower surface of the semiconductor substrate is set depending on a carbon concentration of the semiconductor substrate, and the dose amount for at least one of the concentration peaks other than the deepest peak is set regardless of the carbon concentration of the semiconductor substrate.

Abstract: An object is to suppress disproportionation in a refrigerant comprising HFO-1132(E). Provided as a means for a solution is a method for suppressing a disproportionation reaction of HFO-1132(E), the method comprising operating a refrigeration cycle using a composition comprising a refrigerant, the refrigerant comprising trans-1,2-difluoroethylene (HFO-1132(E)), trifluoroethylene (HFO-1123), and difluoromethane (R32).

Abstract: Damages to a refrigerant circuit of a refrigeration cycle apparatus due to a disproportionation reaction are suppressed. The use of a composition as a refrigerant in a compressor is use of, as a refrigerant, a composition containing one or two or more compounds selected from a group consisting of ethylene-based fluoroolefin, 2,3,3,3-Tetrafluoropropene (HFO-1234yf), and 1,3,3,3-Tetrafluoropropene (HFO-1234ze) in a compressor that includes a terminal (200) including a terminal pin (220) and a body (210) to which the terminal pin (220) is fixed, and the terminal pin (220) is fixed to the body (210) with a fixing adhesive (240) having a melting point or a softening point of 1000° C. or less.

Abstract: Provided is a semiconductor device including a drift region, a buffer region which is provided in a back surface side of a semiconductor substrate relative to the drift region and has a first peak of a doping concentration, and a first lattice defect region which is provided in a front surface side of the semiconductor substrate relative to the first peak in a depth direction of the semiconductor substrate, in which the buffer region has a hydrogen peak which is provided in the front surface side of the semiconductor substrate relative to the first lattice defect region, and an integrated concentration obtained by integrating the doping concentration in a direction from an upper end of the drift region to the hydrogen peak in the depth direction of the semiconductor substrate is equal to or larger than a critical integrated concentration.

Abstract: Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.

Abstract: A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.

Abstract: An object of the present invention is to provide a thin and lightweight polarizing lens for use in lightweight sunglasses (in particular, rimless sunglasses) while maintaining the clamping force and mechanical strength of a temple part, and a manufacturing method therefor. The values of: the center thickness v of a polarizing lens A including an injection-molded layer 3 laminated on at least one surface of a polarizing sheet B, the injection-molded layer having a polyamide-based resin; and the flexural modulus of the injection-molded layer 3 are adjusted, thus the predetermined clamping force and mechanical strength of a temple part are obtained even in the case of sunglasses with the thin and lightweight polarizing lens.

Abstract: Provided is a method capable of separating and purifying astatine-211 in a high yield and dissolving same in a solution. A method for producing astatine-211, including a step of irradiating ? ray to bismuth to produce astatine-211 in the bismuth, and a step of distilling the bismuth that received ? ray irradiation with a carrier gas containing an inert gas, O2 and H2O to separate and purify astatine-211, and dissolving the astatine-211 in a solution.

Abstract: A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.