Abstract: A mounting structure of a current sensor includes: the current sensor including a detection portion; and a connection member for electrically connecting between a battery post of a battery and a harness. The current sensor is mounted on the connection member. The connection member includes a predetermined portion, a current density of which is higher than that of other portions of the connection member. The detection portion of the current sensor is disposed on the predetermined portion of the connection member when the current sensor is mounted on the connection member. The mounting structure may include a pair of holes, one for connection at the battery post, the other one for connection to the harness.

Abstract: A current detection apparatus includes a magnetic core having a ring shape with a gap and a center opening portion through which a current path is disposed, and a magnetic sensor including a magnetic sensing element such as a Hall effect element arranged in the gap. When a current flows through the current path, the magnetic core generates magnetic flux therein so that magnetic field is generated in the gap. The magnetic sensor outputs different electrical signals, each of which is measured in a different measurement range and corresponds to intensity of the magnetic field in the gap. The current detection apparatus measures the current based on the electrical signals outputted from the magnetic sensor.

Abstract: A temperature sensor utilizes the temperature characteristics of a resistance element to detect the temperature by sensing a change in the temperature as a change in the resistance of the resistance element. The resistance element includes a first resistance element which is arranged at such an angle that the resistance thereof increases relative to an angular change in one direction of a magnetic vector that is imparted, and a second resistance element which is arranged at such an angle that the resistance thereof decreases relative thereto. The change in the temperature is sensed as a change in the added value of resistances of the first and second resistance elements.

Abstract: A sensor device includes a sensor chip and a bonding wire being fixed on a substrate. The sensor device is manufactured by using a binding material made of an adhesive containing a foaming agent that evaporates upon exposure to heat. The binding material reduces its elasticity after a wire bonding process because voids being functional as a cushion are formed by evaporation of the foaming agent.

Abstract: A pressure sensor includes a pressure detecting chamber sectionally formed by a diaphragm for receiving measured pressure and a semiconductor chip having a diaphragm as a pressure-sensitive portion is equipped in the pressure detecting chamber. Electrically insulating pressure transmitting liquid for transmitting the measured pressure received by the diaphragm to the semiconductor chip is sealingly filled in the pressure detecting chamber. Also, an electrical circuit for signal processing is equipped around the pressure-sensitive portion at the surface site of the semiconductor chip. The electrical circuit is coated by protection film. Electrical conducting film set to ground potential is formed as the uppermost layer of the semiconductor chip on the surface of the protection film.

Abstract: A current detection apparatus includes a magnetic core having a ring shape with a gap and a center opening portion through which a current path is disposed, and a magnetic sensor including a magnetic sensing element such as a Hall effect element arranged in the gap. When a current flows through the current path, the magnetic core generates magnetic flux therein so that magnetic field is generated in the gap. The magnetic sensor outputs different electrical signals, each of which is measured in a different measurement range and corresponds to intensity of the magnetic field in the gap. The current detection apparatus measures the current based on the electrical signals outputted from the magnetic sensor.

Abstract: A mounting structure of a current sensor includes: the current sensor including a detection portion; and a connection member for electrically connecting between a battery post of a battery and a harness. The current sensor is mounted on the connection member. The connection member includes a predetermined portion, a current density of which is higher than that of other portions of the connection member. The detection portion of the current sensor is disposed on the predetermined portion of the connection member when the current sensor is mounted on the connection member.

Abstract: An electric current sensor includes: a core having a ring shape and including a plurality of core pieces, which are laminated and integrated to provide the core; a magnetic gap disposed on a predetermined part of the core; a Hall element disposed in the magnetic gap; a body for accommodating the core and the Hall element; and a seal member for sealing the core and the Hall element into the body. Each core piece has a thin plate shape, and the core includes deformation preventing means for preventing a deformation of the magnetic gap.

Abstract: A pressure sensor device having a temperature sensor includes a pressure sensor, a temperature sensor, a sensor casing for accommodating the pressure sensor and a connector pin for electrically connecting the pressure sensor and an outside circuit, and a port mounted on the sensor casing and having a pressure introduction port for introducing a measuring object to the pressure sensor. The temperature sensor is disposed in the pressure introduction port, and electrically connects to the connector pin through a lead wire. The lead wire with the temperature sensor is supported by a connection portion disposed between the connector pin and the lead wire. The lead wire has a buffer disposed between the lead wire and a part of the pressure introduction port for reducing a vibration of both the temperature sensor and the lead wire.

Abstract: A temperature sensor utilizes the temperature characteristics of a resistance element to detect the temperature by sensing a change in the temperature as a change in the resistance of the resistance element. The resistance element includes a first resistance element which is arranged at such an angle that the resistance thereof increases relative to an angular change in one direction of a magnetic vector that is imparted, and a second resistance element which is arranged at such an angle that the resistance thereof decreases relative thereto. The change in the temperature is sensed as a change in the added value of resistances of the first and second resistance elements.

Abstract: An electric current sensor includes: a core having a ring shape and including a plurality of core pieces, which are laminated and integrated to provide the core; a magnetic gap disposed on a predetermined part of the core; a Hall element disposed in the magnetic gap; a body for accommodating the core and the Hall element; and a seal member for sealing the core and the Hall element into the body. Each core piece has a thin plate shape, and the core includes deformation preventing means for preventing a deformation of the magnetic gap.

Abstract: A sensor device includes a sensor chip and a bonding wire being fixed on a substrate. The sensor device is manufactured by using a binding material made of an adhesive containing a foaming agent that evaporates upon exposure to heat. The binding material reduces its elasticity after a wire bonding process because voids being functional as a cushion are formed by evaporation of the foaming agent.

Abstract: A pressure sensor includes a pressure detecting chamber sectionally formed by a diaphragm for receiving measured pressure and a semiconductor chip having a diaphragm as a pressure-sensitive portion is equipped in the pressure detecting chamber. Electrically insulating pressure transmitting liquid for transmitting the measured pressure received by the diaphragm to the semiconductor chip is sealingly filled in the pressure detecting chamber. Also, an electrical circuit for signal processing is equipped around the pressure-sensitive portion at the surface site of the semiconductor chip. The electrical circuit is coated by protection film. Electrical conducting film set to ground potential is formed as the uppermost layer of the semiconductor chip on the surface of the protection film.

Abstract: A semiconductor dynamic quantity sensor includes a supporting portion, an adhesive, and a sensor chip. The adhesive is located on a surface of the supporting portion. The sensor chip is located on the adhesive. The sensor chip and the supporting portion have been bonded together by heating the adhesive. The adhesive has a deformation factor of 0.5% or smaller at the temperature at which the adhesive is heated for bonding the sensor chip and the supporting portion together in order to reduce the stress caused by the hardening shrinkage of the adhesive.

Abstract: A sensor device includes a circuit chip, an adhesion film, and a sensor chip mounted on the circuit chip through the adhesion film. The sensor chip includes a substrate having foreside and backside surfaces, a concavity disposed on the backside surface of the substrate, and a membrane disposed on the foreside surface of the substrate so that the membrane covers the concavity. The adhesion film is disposed between the sensor chip and the circuit chip so as to form a passage for connecting between the concavity and an outside of the concavity.

Abstract: A semiconductor dynamic sensor such as an acceleration sensor is composed of a sensor chip for detecting a dynamic force applied thereto and a circuit chip for processing output signals from the sensor chip. The sensor chip is supported on the circuit chip, and both chips are mounted on a package case. To suppress thermal stress transfer from the package case to the sensor chip through the circuit chip, an adhesive film having an elasticity modulus lower than 10 MPa is interposed between the circuit chip and the package case. Characteristics of the sensor chip are kept stable by suppressing the thermal stress transfer from the package case.

Abstract: A sensor device includes a circuit chip, an adhesion film, and a sensor chip mounted on the circuit chip through the adhesion film. The sensor chip includes a substrate having foreside and backside surfaces, a concavity disposed on the backside surface of the substrate, and a membrane disposed on the foreside surface of the substrate so that the membrane covers the concavity. The adhesion film is disposed between the sensor chip and the circuit chip so as to form a passage for connecting between the concavity and an outside of the concavity.

Abstract: A pressure sensor device having a temperature sensor includes a pressure sensor, a temperature sensor, a sensor casing for accommodating the pressure sensor and a connector pin for electrically connecting the pressure sensor and an outside circuit, and a port mounted on the sensor casing and having a pressure introduction port for introducing a measuring object to the pressure sensor. The temperature sensor is disposed in the pressure introduction port, and electrically connects to the connector pin through a lead wire. The lead wire with the temperature sensor is supported by a connection portion disposed between the connector pin and the lead wire. The lead wire has a buffer disposed between the lead wire and a part of the pressure introduction port for reducing a vibration of both the temperature sensor and the lead wire.

Abstract: A semiconductor dynamic quantity sensor includes a supporting portion, an adhesive, and a sensor chip. The adhesive is located on a surface of the supporting portion. The sensor chip is located on the adhesive. The sensor chip and the supporting portion have been bonded together by heating the adhesive. The adhesive has a deformation factor of 0.5% or smaller at the temperature at which the adhesive is heated for bonding the sensor chip and the supporting portion together in order to reduce the stress caused by the hardening shrinkage of the adhesive.

Abstract: A semiconductor dynamic sensor such as an acceleration sensor is composed of a sensor chip for detecting a dynamic force applied thereto and a circuit chip for processing output signals from the sensor chip. The sensor chip is supported on the circuit chip, and both chips are mounted on a package case. To suppress thermal stress transfer from the package case to the sensor chip through the circuit chip, an adhesive film having an elasticity modulus lower than 10 MPa is interposed between the circuit chip and the package case. Characteristics of the sensor chip are kept stable by suppressing the thermal stress transfer from the package case.