Abstract: A liquid discharge head substrate is provided. The head substrate comprises a substrate, an insulator arranged above the substrate, conductive patterns arranged in the insulator, a heat generating resistive element arranged above the insulator, a protective layer covering the heat generating resistive element, and electrode plugs configured to connect the heat generating resistive element and the conductive patterns. The heat generating resistive element and the electrode plugs are arranged in contact with each other to overlap each other. A current flows through the heat generating resistive element in a first direction. In the first direction, a length of the electrode plug is smaller than a length of the heat generating resistive element and in a second direction crossing the first direction, a length of the electrode plug is larger than a length of the heat generating resistive element.

Abstract: A liquid discharge head substrate is provided. The head substrate comprises a substrate, an insulator arranged above the substrate, conductive patterns arranged in the insulator, a heat generating resistive element arranged above the insulator, a protective layer covering the heat generating resistive element, and electrode plugs configured to connect the heat generating resistive element and the conductive patterns. The heat generating resistive element and the electrode plugs are arranged in contact with each other to overlap each other. A current flows through the heat generating resistive element in a first direction. In the first direction, a length of the electrode plug is smaller than a length of the heat generating resistive element and in a second direction crossing the first direction, a length of the electrode plug is larger than a length of the heat generating resistive element.

Abstract: A method of manufacturing a semiconductor device having a twin well structure is provided. The method includes ion-implanting of a first conductivity type impurity in a first region and a second region of a semiconductor substrate, the first and second regions being located adjacent to each other; forming a first resist pattern to cover the first region of the semiconductor substrate and to expose the second region of the semiconductor substrate; ion-implanting of a second conductivity type impurity at a higher concentration compared to the first conductivity type impurity in the second region of the semiconductor substrate, with the first resist pattern being used as a mask; and thermal-diffusing the first conductivity type of impurity and the second conductivity type of impurity.

Abstract: A method of manufacturing a semiconductor device having a twin well structure is provided. The method includes ion-implanting of a first conductivity type impurity in a first region and a second region of a semiconductor substrate, the first and second regions being located adjacent to each other; forming a first resist pattern to cover the first region of the semiconductor substrate and to expose the second region of the semiconductor substrate; ion-implanting of a second conductivity type impurity at a higher concentration compared to the first conductivity type impurity in the second region of the semiconductor substrate, with the first resist pattern being used as a mask; and thermal-diffusing the first conductivity type of impurity and the second conductivity type of impurity.